Semiconductor image sensor device and manufacturing method of the same

Abstract

Semiconductor image sensor devices and manufacturing method of the same are disclosed. The semiconductor image sensor device includes a substrate, a first pixel and a second pixel, and an isolation structure. The first pixel and second pixel are disposed in the substrate, wherein the first and second pixels are neighboring pixels. The isolation structure is disposed in the substrate and between the first and second pixels, wherein the isolation structure includes a dielectric layer, and the dielectric layer includes silicon oxycarbonitride (SiOCN).

1 . A semiconductor image sensor device, comprising:
 a substrate;   a first pixel and a second pixel disposed in the substrate, wherein the first and second pixels are neighboring pixels; and   an isolation structure disposed in the substrate and between the first and second pixels, wherein the isolation structure comprises a dielectric layer and a liner layer aside the dielectric layer, the dielectric layer comprises silicon oxycarbonitride (SiOCN), and a material of the liner layer is different from the dielectric layer.   
     
     
         2 . The semiconductor image sensor device according to  claim 1 , wherein the isolation structure further comprises at least one of SiO 2 , SiC and SiCN. 
     
     
         3 . The semiconductor image sensor device according to  claim 1 , wherein the isolation structure includes a deep trench isolation (DTI) structure. 
     
     
         4 . The semiconductor image sensor device according to  claim 1 , wherein a depth of the isolation structure ranges from 0.5 μm to 1.5 μm. 
     
     
         5 . The semiconductor image sensor device according to  claim 1 , wherein a ratio of depth to width of the isolation structure ranges from 2 to 20. 
     
     
         6 . The semiconductor image sensor device according to  claim 1 , wherein the first and second pixels respectively comprise a doped radiation-sensing region. 
     
     
         7 . (canceled) 
     
     
         8 . The semiconductor image sensor device according to  claim 1 , wherein the semiconductor image sensor device is a back side illuminated (BSI) image sensor device. 
     
     
         9 . The semiconductor image sensor device according to  claim 1 , wherein the semiconductor image sensor device is a front side illuminated (FSI) image sensor device. 
     
     
         10 . A semiconductor image sensor device, comprising:
 a substrate;   a plurality of radiation-sensing regions formed in the substrate; and   a plurality of deep trench isolation (DTI) structures formed in the substrate, wherein each pair of neighboring radiation-sensing regions is separated from one another by a respective one of the DTI structures, the DTI structure has a ratio of depth to width ranging from 2 to 30, the DTI structure comprises a dielectric layer and a liner layer aside the dielectric layer, the dielectric layer comprises silicon oxycarbonitride (SiOCN), and a material of the liner layer is different from the dielectric layer.   
     
     
         11 . The semiconductor image sensor device according to  claim 10 , wherein the DTI structure further comprises at least one of SiO 2 , SiC and SiCN. 
     
     
         12 . The semiconductor image sensor device according to  claim 10 , wherein a depth of the DTI structure ranges from 0.5 μm to 1.5 μm. 
     
     
         13 . The semiconductor image sensor device according to  claim 10 , wherein a depth of the DTI structure is larger than a depth of the radiation-sensing region. 
     
     
         14 . (canceled) 
     
     
         15 . The semiconductor image sensor device according to  claim 10 , wherein the radiation-sensing region is a doped region. 
     
     
         16 . A manufacturing method of a semiconductor image sensor device comprising:
 forming a plurality of trenches in a substrate;   filling dielectric layers in the trenches respectively by plasma enhanced atomic layer deposition (PEALD) method, to form deep isolation structures in the substrate; and   forming a radiation-sensing region in the substrate between neighboring deep isolation structures.   
     
     
         17 . (canceled) 
     
     
         18 . The manufacturing method according to  claim 16 , wherein the dielectric layers are formed by reacting Bis(tertiary-butylamino)silane (BTBAS) and a gas mixture comprising N 2 O, N 2  and O 2 . 
     
     
         19 . The manufacturing method according to  claim 16 , wherein filling dielectric layers in the trenches comprising:
 forming a dielectric material in the trenches and over the substrate between the trenches; and   removing the dielectric material outside the trenches.   
     
     
         20 . The manufacturing method according to  claim 16 , further comprising forming a liner layer in the trench and between the dielectric layer and the substrate. 
     
     
         21 . The semiconductor image sensor device according to  claim 1 , wherein the liner layer is disposed on a sidewall and a bottom of an opening in the substrate and between the substrate and the dielectric layer. 
     
     
         22 . The semiconductor image sensor device according to  claim 1 , wherein the material of the liner layer is a high dielectric constant (high-k) material. 
     
     
         23 . The semiconductor image sensor device according to  claim 1 , wherein the liner layer has multiple layers.