Hollow cathode, an apparatus including a hollow cathode for manufacturing a semiconductor device, and a method of manufacturing a semiconductor device using a hollow cathode

Abstract

A hollow cathode includes an insulation plate having cathode holes. Bottom electrodes are below the insulation plate. The bottom electrodes define first holes having a width greater than a width of the cathode holes. Top electrodes are at an opposite side of the insulation plate from the bottom electrodes. The top electrodes define second holes aligned with the first holes along a direction orthogonal to the upper surface of the insulation plate.

1 . A hollow cathode, comprising:
 an insulation plate having cathode holes;   bottom electrodes below the insulation plate, wherein the bottom electrodes define first holes having a width greater than a width of the cathode holes; and   top electrodes at an opposite side of the insulation plate from the bottom electrodes and defining second holes aligned with the first holes along a direction orthogonal to an upper surface of the insulation plate.   
     
     
         2 . The hollow cathode of  claim 1 , wherein each of the bottom electrodes extends in a first direction,
 wherein the top electrodes overlap the bottom electrodes along the direction orthogonal to the upper surface of the insulation plate, and   wherein the top electrodes are separated from each other in the first direction and in a second direction intersecting the first direction.   
     
     
         3 . The hollow cathode of  claim 2 , further comprising upper electrical lines above the insulation plate, wherein each upper electrical line of the upper electrical lines is individually connected to a top electrode of the top electrodes. 
     
     
         4 . The hollow cathode of  claim 1 , wherein the bottom electrodes extend in a first direction,
 wherein the top electrodes extend in a second direction intersecting the first direction, and   wherein the cathode holes and the first and second holes are disposed at intersections between the bottom electrodes and the top electrodes.   
     
     
         5 . The hollow cathode of  claim 4 , wherein the insulation plate has a gap between the top electrodes and the bottom electrodes. 
     
     
         6 . The hollow cathode of  claim 5 , further comprising a shutter plate in the gap. 
     
     
         7 . The hollow cathode of  claim 6 , wherein the shutter plate has shutter holes aligned with the cathode holes along the direction orthogonal to the upper surface of the insulation plate. 
     
     
         8 . The hollow cathode of  claim 1 , wherein the top electrodes each comprise:
 an edge ring;   a central ring in the edge ring; and   a middle ring between the central ring and the edge ring.   
     
     
         9 . The hollow cathode of  claim 1 , wherein the insulation plate comprises a ceramic dielectric. 
     
     
         10 . The hollow cathode of  claim 1 , further comprising:
 an upper protection layer disposed on the top electrodes and the insulation plate; and   a lower protection layer disposed on the bottom electrodes and the insulation plate.   
     
     
         11 . An apparatus for manufacturing a semiconductor device, the apparatus comprising:
 a chamber;   an electrostatic chuck in the chamber; and   a hollow cathode in the chamber, the hollow cathode being disposed above the electrostatic chuck,   wherein the hollow cathode comprises:
 an insulation plate having cathode holes; 
 bottom electrodes below the insulation plate, wherein the bottom electrodes define first holes having a width greater than a width of the cathode holes; and 
 top electrodes at an opposite side of the insulation plate from the bottom electrodes and defining second holes aligned with the first holes along a direction orthogonal to an upper surface of the insulation plate. 
   
     
     
         12 . The apparatus of  claim 11 , further comprising a bias power supply configured to provide a bias power to the top electrodes,
 wherein the bias power supply comprises:   a bias power source;   switches connected between the bias power source and the top electrodes, the switches each controlling a flow of the bias power to a top electrode of the top electrodes; and   a bias power driver turning on the switches to individually provide the bias power to the top electrode of the top electrodes.   
     
     
         13 . The apparatus of  claim 12 , further comprising a source power supply configured to provide a source power to the bottom electrodes,
 wherein the source power has voltage polarity opposite to that of the bias power.   
     
     
         14 . The apparatus of  claim 11 , wherein the chamber comprises:
 a lower housing; and   an upper housing on the lower housing,   wherein the hollow cathode is disposed in the upper housing.   
     
     
         15 . The apparatus of  claim 14 , wherein the upper housing has partitions between the cathode holes. 
     
     
         16 - 20 . (canceled) 
     
     
         21 . An apparatus for etching a semiconductor device, comprising:
 an etching chamber;   an electrostatic chuck positioned in the etching chamber;   a plurality of reaction gas chambers positioned above the etching chamber, wherein each of the reaction gas chambers is individually connected to a gas supply, and wherein the reaction gas chambers are separated from each other by partitions; and   a hollow cathode positioned between the etching chamber and the plurality of reaction gas chambers,   wherein the hollow cathode comprises a plurality of cathode holes positioned over the electrostatic chuck, and   wherein the hollow cathode comprise upper and lower electrodes adjacent to each cathode hole of the plurality of cathode holes, wherein the upper and lower electrodes are disposed on an insulation plate.