Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

Abstract

A technique of manufacturing a semiconductor device includes forming a film on a substrate in a process chamber by supplying a precursor and a reactant to the substrate under a first temperature at which the precursor and the reactant are not pyrolyzed, and purging, after performing the act of forming the film, an interior of the process chamber by supplying at least one selected from a group consisting of a plasma-excited gas, an alcohol, and a reducing agent into the process chamber under a second temperature equal to or lower than the first temperature.

What is claimed is: 
     
         1 . A method of manufacturing a semiconductor device, comprising:
 forming a film on a substrate in a process chamber by supplying a precursor and a reactant to the substrate under a first temperature at which the precursor and the reactant are not pyrolyzed; and   purging, after performing the act of forming the film, an interior of the process chamber by supplying a purge gas including at least one selected from the group consisting of an alcohol and a reducing agent into the process chamber under a second temperature equal to or lower than the first temperature.   
     
     
         2 . The method of  claim 1 , wherein the first temperature is set at a temperature of 0 degrees C. or more and 150 degrees C. or less. 
     
     
         3 . The method of  claim 1 , wherein in the act of purging the interior of the process chamber, at least moisture, which is adsorbed to an inner wall of the process chamber in the act of forming the film, is removed. 
     
     
         4 . The method of  claim 3 , wherein a water vapor is used as the reactant. 
     
     
         5 . The method of  claim 4 , wherein the act of forming the film further includes supplying a catalyst to the substrate. 
     
     
         6 . The method of  claim 5 , wherein pyridine is used as the catalyst. 
     
     
         7 . The method of  claim 1 , wherein the alcohol is at least one selected from the group consisting of isopropyl alcohol, ethanol, and methanol. 
     
     
         8 . The method of  claim 1 , wherein silicon hydride is used as the reducing agent. 
     
     
         9 . The method of  claim 1 , wherein a plasma-excited hydrogen-containing gas is used as the reducing agent. 
     
     
         10 . The method of  claim 1 , wherein in the act of purging the interior of the process chamber, an internal pressure of the process chamber is changed. 
     
     
         11 . The method of  claim 10 , wherein in the act of purging the interior of the process chamber, a cycle is alternately performed a predetermined number of times, the cycle including non-simultaneously performing:
 increasing the internal pressure of the process chamber during the supplying the purge gas; and   evacuating the interior of the process chamber.   
     
     
         12 . The method of  claim 1 , wherein the act of purging the interior of the process chamber is performed while the substrate is located in the process chamber.