US2020161189A1PendingUtilityA1

SELF-ALIGNED QUADRUPLE PATTERNING PROCESS FOR FIN PITCH BELOW 20nm

Assignee: QUALCOMM INCPriority: Sep 20, 2016Filed: Jan 24, 2020Published: May 21, 2020
Est. expirySep 20, 2036(~10.1 yrs left)· nominal 20-yr term from priority
H10P 50/242H01L 21/823821H01L 29/66795H01L 27/0924H01L 21/3065H01L 21/823807H01L 29/1037H10D 62/292H10D 84/0167H10D 84/0193H10D 30/024H10D 84/853H10D 84/038H10P 50/283
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Claims

Abstract

A method of producing a FinFET device with fin pitch of less than 20 nm is presented. In accordance with some embodiments, fins are deposited on sidewall spacers, which themselves are deposited on mandrels. The mandrels can be formed by lithographic processes while the fins and sidewall spacers formed by deposition technologies.

Claims

exact text as granted — not AI-modified
1 - 14 . (canceled) 
     
     
         15 . A multi-fin device, comprising:
 a plurality of fins formed by deposition of the fins on opposite vertical sides of sidewall spacers, the sidewall spacers having been formed on, and separated by, a single mandrel that was removed prior to formation of the plurality of fins,   wherein a pitch of the plurality of fins is dependent on a width of the single mandrel and widths of the sidewall spacers, and   wherein the pitch is less than 20 nm.   
     
     
         16 . The multi-fin device of  claim 15 , wherein the plurality of fins includes two fins formed on opposite sides of one sidewall spacer. 
     
     
         17 . The multi-fin device of  claim 16 , wherein the two-fins are separated from another two-fin device. 
     
     
         18 . The multi-fin device of  claim 15 , wherein the plurality of fins includes more than two fins formed on sides of adjacent sidewall spacers. 
     
     
         19 . The multi-fin device of  claim 15 , wherein the sidewall spacers are removed. 
     
     
         20 . A multi-fin device, comprising:
 means for providing a plurality of fins with a pitch of less than 20 nm,   wherein the plurality of fins includes fins formed on opposing vertical sides of sidewall spacers that have been formed on vertical sides of a single mandrel that is removed after formation of the sidewall spacers.   
     
     
         21 . The multi-fin device of  claim 20 , wherein the means for providing a plurality of fins includes
 means for depositing and forming the mandrels; and   means for depositing the sidewall spacers on vertical sides of the mandrels.

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