Substrate processing apparatus, substrate processing method and non-transitory computer-readable recording medium

Abstract

A technique capable of improving uniformity of characteristics of a film formed on a surface of a substrate by a rotary type apparatus. According to one aspect a substrate processing apparatus is provided including: a process chamber for processing a substrate; a substrate support in the process chamber and including a plurality of placement parts for placing the substrate; a rotating part to rotate the substrate support; a heater provided below or within the substrate support; a first nozzle above the placement parts so as to face the placement parts and including a first portion with no hole to thermally decompose a process gas; and a second nozzle above the placement parts and parallel with the first nozzle and including a second portion with no hole to thermally decompose the process gas; and controller for controlling a positional relationship between the substrate and first nozzle via the rotating part.

What is claimed is: 
     
         1 . A substrate processing apparatus comprising:
 a process chamber in which a substrate is processed;   a substrate support provided in the process chamber and comprising a plurality of placement parts on which the substrate is placed;   a rotating part configured to rotate the substrate support;   a heater provided below or within the substrate support and configured to heat the substrate;   a first nozzle provided above the plurality of placement parts so as to face the plurality of placement parts and comprising a first portion where no hole is provided such that a process gas is thermally decomposed while passing through the first portion;   a second nozzle provided above the plurality of placement parts so as to face the plurality of placement parts as an auxiliary nozzle and arranged in parallel with the first nozzle, the second nozzle comprising a second portion where no hole is provided such that the process gas is thermally decomposed while passing through the second portion, wherein the first portion and the second portion are provided at positions facing the heater; and   a controller configured to be capable of controlling the rotating part such that a positional relationship between the substrate and the first nozzle changes as a rotation of the substrate support proceeds.   
     
     
         2 . The substrate processing apparatus of  claim 1 , wherein the positional relationship is defined by a distance. 
     
     
         3 . The substrate processing apparatus of  claim 1 , wherein a positional relationship between a surface of the substrate and the first nozzle is variable. 
     
     
         4 . The substrate processing apparatus of  claim 1 , wherein the first nozzle and the second nozzle are provided to face the substrate support. 
     
     
         5 . The substrate processing apparatus of  claim 1 , wherein the plurality of placement parts revolve within the process chamber in accordance with the rotation of the substrate support 
     
     
         6 . The substrate processing apparatus of  claim 1 , wherein a surface area vertically overlapping between the substrate support and the first portion changes in accordance with the rotation of the substrate support proceeds. 
     
     
         7 . The substrate processing apparatus of  claim 1 , wherein the second nozzle comprises a plurality of nozzles. 
     
     
         8 . The substrate processing apparatus of  claim 1 , wherein a length of the first nozzle and a length of the second nozzle gradually decrease from a rotationally upstream portion to a rotationally downstream portion along a rotation direction of the substrate support. 
     
     
         9 . The substrate processing apparatus of  claim 8 , wherein a length of the first nozzle and a length of the second nozzle gradually decrease from a rotationally upstream portion to a rotationally downstream portion along a rotation direction of the substrate support. 
     
     
         10 . The substrate processing apparatus of  claim 1 , wherein a diameter of the first nozzle and a diameter of the second nozzle gradually decrease from a rotationally upstream portion to a rotationally downstream portion along a rotation direction of the substrate support. 
     
     
         11 . The substrate processing apparatus of  claim 8 , wherein a diameter of the first nozzle and a diameter of the second nozzle gradually decrease from the rotationally upstream portion to the rotationally downstream portion along the rotation direction of the substrate support. 
     
     
         12 . The substrate processing apparatus of  claim 1 , wherein a diameter of the first nozzle and a diameter of the second nozzle gradually increase from a rotationally upstream portion to a rotationally downstream portion along a rotation direction of the substrate support. 
     
     
         13 . The substrate processing apparatus of  claim 8 , wherein a diameter of the first nozzle and a diameter of the second nozzle gradually increase from the rotationally upstream portion to the rotationally downstream portion along the rotation direction of the substrate support. 
     
     
         14 . The substrate processing apparatus of  claim 1 , wherein a front end of the first nozzle and a front end of the second nozzle are configured to be open. 
     
     
         15 . A substrate processing method by using a substrate processing apparatus comprising: a process chamber in which a substrate is processed; a substrate support provided in the process chamber and comprising a plurality of placement parts on which the substrate is placed; a rotating part configured to rotate the substrate support; a heater provided below or within the substrate support and configured to heat the substrate; a first nozzle provided above the plurality of placement parts so as to face the plurality of placement parts and comprising a first portion where no hole is provided such that a process gas is thermally decomposed while passing through the first portion; a second nozzle provided above the plurality of placement parts so as to face the plurality of placement parts as an auxiliary nozzle and arranged in parallel with the first nozzle, wherein the second nozzle comprises a second portion where no hole is provided such that the process gas is thermally decomposed while passing through the second portion, and wherein the first portion and the second portion are provided at positions facing the heater; and a controller configured to be capable of controlling the rotating part such that a positional relationship between the substrate and the first nozzle changes as a rotation of the substrate support proceeds, the substrate processing method comprising:
 (a) placing the substrate on at least one of the plurality of placement parts; and   (b) supplying the process gas onto the substrate while rotating the substrate support.   
     
     
         16 . A non-transitory computer-readable recording medium storing a program related to a substrate processing apparatus comprising: a process chamber in which a substrate is processed; a substrate support provided in the process chamber and comprising a plurality of placement parts on which the substrate is placed; a rotating part configured to rotate the substrate support; a heater provided below or within the substrate support and configured to heat the substrate; a first nozzle provided above the plurality of placement parts so as to face the plurality of placement parts and comprising a first portion where no hole is provided such that a process gas is thermally decomposed while passing through the first portion; a second nozzle provided above the plurality of placement parts so as to face the plurality of placement parts as an auxiliary nozzle and arranged in parallel with the first nozzle, wherein the second nozzle comprises a second portion where no hole is provided such that the process gas is thermally decomposed while passing through the second portion, and wherein the first portion and the second portion are provided at positions facing the heater; and a controller configured to be capable of controlling the rotating part such that a positional relationship between the substrate and the first nozzle changes as a rotation of the substrate support proceeds, wherein the program causes, by a computer, the substrate processing apparatus to perform:
 (a) placing the substrate on at least one of the plurality of placement parts; and   (b) supplying the process gas onto the substrate while rotating the substrate support.