US2025306466A1PendingUtilityA1

Photoresist system and method

Assignee: TAIWAN SEMICONDUCTOR MFG CO LTDPriority: Oct 30, 2018Filed: Jun 11, 2025Published: Oct 2, 2025
Est. expiryOct 30, 2038(~12.3 yrs left)· nominal 20-yr term from priority
H10P 72/78H10P 72/7614H10P 72/0448H10P 72/0432G03F 7/168G03F 7/38
87
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Claims

Abstract

A photoresist apparatus and a method are provided. The photoresist apparatus includes a pre-baking apparatus. The pre-baking apparatus includes: a hot-plate, a first cover over the hot-plate, a second cover over the first cover, a first heating element extending along a topmost surface of the first cover, and a second heating element extending along a topmost surface of the second cover.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . An apparatus comprising:
 a hot-plate to place a wafer thereon;   a first cover over the hot-plate, the wafer being interposed between the hot-plate and the first cover while the wafer is placed on the hot-plate;   a second cover over the first cover, the first cover being interposed between the wafer and the second cover during operation;   a first heating element extending along a top surface of the first cover, the first heating element being configured to raise a temperature of the first cover; and   an exhaust pipe connected to the second cover.   
     
     
         2 . The apparatus of  claim 1 , further comprising:
 a second heating element extending along a top surface of the second cover.   
     
     
         3 . The apparatus of  claim 2 , wherein the second cover comprises a plurality of openings, wherein the second heating element comprises a first opening, wherein the first opening of the second heating element overlaps the plurality of openings of the second cover. 
     
     
         4 . The apparatus of  claim 1 , further comprising:
 a second heating element extending along an outer surface of the exhaust pipe, the second heating element being configured to raise a temperature of the exhaust pipe.   
     
     
         5 . The apparatus of  claim 1 , further comprising:
 an intake pipe; and   a second heating element extending around the intake pipe, the second heating element being configured to raise a temperature of the intake pipe.   
     
     
         6 . The apparatus of  claim 1 , wherein the first heating element raises the temperature of the first cover to a higher temperature than a temperature of the wafer during operation. 
     
     
         7 . The apparatus of  claim 1 , wherein the first heating element comprises a plurality of openings. 
     
     
         8 . An apparatus comprising:
 a hot-plate to place a wafer thereon;   a first cover over the hot-plate, the wafer being interposed between the hot-plate and the first cover while the wafer is placed on the hot-plate;   a second cover over the first cover, the first cover being interposed between the wafer and the second cover during operation;   a first heating element extending along a top surface of the second cover, the first heating element being configured to raise a temperature of the second cover; and   an exhaust pipe connected to the second cover.   
     
     
         9 . The apparatus of  claim 8 , further comprising a second heating element extending along a top surface of the first cover, the second heating element being configured to raise a temperature of the first cover. 
     
     
         10 . The apparatus of  claim 8 , wherein the first cover comprises a plurality of holes extending through the first cover. 
     
     
         11 . The apparatus of  claim 10 , wherein the plurality of holes is arranged in a radial pattern. 
     
     
         12 . The apparatus of  claim 11 , wherein the second cover comprises a plurality of grooves on a surface that faces the first cover. 
     
     
         13 . The apparatus of  claim 12 , wherein the plurality of grooves forms a radial pattern aligned with the plurality of holes of the first cover. 
     
     
         14 . The apparatus of  claim 8 , wherein the second cover comprises one or more holes extending through the second cover at a center of the second cover. 
     
     
         15 . The apparatus of  claim 8 , further comprising a second heating element extending along an outer surface of the exhaust pipe, the second heating element being configured to raise a temperature of the exhaust pipe. 
     
     
         16 . An apparatus comprising:
 a hot-plate to place a wafer thereon;   a first cover over the hot-plate, the wafer being interposed between the hot-plate and the first cover while the wafer is placed on the hot-plate;   a second cover over the first cover, the first cover being interposed between the wafer and the second cover during operation;   an exhaust pipe connected to the second cover; and   a first heating element extending along an outer surface of the exhaust pipe, the first heating element being configured to raise a temperature of the exhaust pipe.   
     
     
         17 . The apparatus of  claim 16 , further comprising:
 a second heating element extending along a top surface of the second cover, the second heating element being configured to raise a temperature of the second cover.   
     
     
         18 . The apparatus of  claim 17 , further comprising:
 a third heating element extending along a top surface of the first cover, the third heating element being configured to raise a temperature of the first cover.   
     
     
         19 . The apparatus of  claim 18 , further comprising:
 an intake pipe; and   a fourth heating element extending along an outer surface of the intake pipe, the fourth heating element being configured to raise a temperature of the intake pipe to prevent condensation of photoresist solvent vapor.   
     
     
         20 . The apparatus of  claim 18 , wherein the hot-plate is configured to operate at a first temperature, the first heating element is configured to operate at a second temperature, and the second heating element is configured to operate at a third temperature, wherein the second temperature and the third temperature are different from the first temperature.

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