Method for manufacturing a semiconductor device and apparatus for manufacturing a semiconductor device

Abstract

A method for manufacturing a semiconductor device including, forming a photosensitive-film on a substrate, carrying the substrate on which the photosensitive-film is formed, to an exposure device provided with a mask in which an on-mask-inspection-mark and an on-mask-device-pattern are formed, selectively exposing the photosensitive-film to light to transfer the on-mask-inspection-mark to the photosensitive-film to form a latent-image of the inspection-mark on the photosensitive-film, heating at least that area of the photosensitive-film in which the latent-image of the inspection-mark is formed, measuring the inspection-mark, changing set-values for the exposure device used for the selective exposure, on the basis of result of the measurement so that exposure conditions conform to the set-values, exposing the photosensitive-film on the basis of the changed set-values to transfer the on-mask-device-pattern to the photosensitive-film to form a latent image of the device-pattern on the photosensitive-film, heating an entire surface of the photosensitive-film, and developing the photosensitive-film.

1. A method for manufacturing a semiconductor device, the method comprising:
 forming a photosensitive film on a main surface of a semiconductor substrate;  
 carrying the semiconductor substrate on which the photosensitive film is formed, to an exposure device provided with a mask in which an on-mask inspection mark and an on-mask device pattern are formed to form an inspection mark and a device pattern, respectively, on the photosensitive film;  
 selectively exposing the photosensitive film to light to transfer the on-mask inspection mark to the photosensitive film to form a latent image of the inspection mark on the photosensitive film;  
 heating at least that area of the photosensitive film in which the latent image of the inspection mark is formed, to relieve the image of the inspection mark;  
 measuring the relieved image of the inspection mark;  
 changing set values for the exposure device used for the selective exposure, on the basis of result of the measurement so that exposure conditions conform to the set values;  
 exposing the photosensitive film on the basis of the changed set values to transfer the on-mask device pattern to the photosensitive film to form a latent image of the device pattern on the photosensitive film;  
 heating an entire surface of the photosensitive film; and  
 developing the photosensitive film.  
 
   
   
     2. The method for manufacturing a semiconductor device according to  claim 1 , wherein an alignment mark is formed on the main surface of the semiconductor substrate, and
 alignment is carried out by detecting, before the selective exposure using the on-mask inspection mark, a position of the alignment mark inside the exposure device, and on the basis of a result of the detection, calculating a position at which the photosensitive film is exposed to light to transfer the pattern formed in the mask to the photosensitive film.  
 
   
   
     3. The method for manufacturing a semiconductor device according to  claim 1 , wherein the heating of at least the area in which the latent image of the inspection mark is formed is selective heating of the area in which the latent image of the inspection mark on the photosensitive film is formed. 
   
   
     4. The method for manufacturing a semiconductor device according to  claim 1 , wherein the photosensitive film is heated inside the exposure device. 
   
   
     5. The method for manufacturing a semiconductor device according to  claim 1 , wherein the photosensitive film is heated by irradiating the area in which the latent image of the inspection mark is formed, with light containing a wavelength absorbed by a film material formed on the semiconductor substrate. 
   
   
     6. The method for manufacturing a semiconductor device according to  claim 1 , wherein the heating of at least the area in which the latent image of the inspection mark is formed is heating of an entire surface of the photosensitive film, and
 at least one of dose used for exposure using the on-mask device pattern, temperature at which the entire surface is heated, and time required to heat the entire surface is corrected on the basis of a change in sensitivity of the photosensitive film to exposure light which change is caused by the heating.  
 
   
   
     7. The method for manufacturing a semiconductor device according to  claim 1 , wherein a first misalignment mark is formed on the main surface of the semiconductor substrate,
 a second misalignment mark is formed on the photosensitive film as an inspection mark,  
 when the image of the inspection mark is measured, a magnitude of misalignment between a position of the first misalignment between a position of the first misalignment inspection mark and a position of the second misalignment inspection mark is measured, and  
 set values for the exposure device are changed so as to zero the measured magnitude of misalignment.  
 
   
   
     8. The method for manufacturing a semiconductor device according to  claim 1 , wherein a dose measurement mark is formed on the photosensitive film as an inspection mark, an actual dose for the photosensitive film is calculated on the basis of a result of detection of the dose measurement mark, and the set value for the exposure device are changed so that the dose for the photosensitive film equals a corresponding set value. 
   
   
     9. The method for manufacturing a semiconductor device according to  claim 1 , wherein a focal-position measurement mark is formed on the photosensitive film as the inspection mark, a focal position of exposure light applied to the photosensitive film is calculated on the basis of a shape of the focal-position measurement mark, and the set values for the exposure device used for the selective exposure are changed to zero a deviation of the focal position from a corresponding set value. 
   
   
     10. An apparatus for manufacturing a semiconductor device, the apparatus comprising:
 a substrate holding section configured to hold a substrate including a semiconductor substrate a potosensitive film above the semiconductor substrate, and a first alignment mark between the semiconductor substrate and the photosensitive film;  
 an exposure mask holding section configured to hold an exposure mask having an on-mask device pattern area and an on-mask inspection mark area, wherein the on-mask inspection mark area includes an on-mask second alignment mark, and wherein the on-mask inspection mark area is to be transferred to a region of the photosensitive film to form a latent image of the second alignment mark on the photosensitive film;  
 a light source;  
 an illuminating optical system configured to irradiate the exposure mask with a light from the light source;  
 a projecting optical system configured to project light transmitted through the exposure mask on the photosensitive film;  
 an alignment mark measuring optical system configured to detect a position of the first alignment mark and the latent image of the second alignment mark; and  
 a heating portion configured to selectively heat the region of the photosensitive film by irradiating the region with light.  
 
   
   
     11. The apparatus for manufacturing a semiconductor device according to  claim 10 , wherein a position of the substrate heated by the heating portion substantially coincides with a focal position of the alignment mark measuring optical system which detects the position of the alignment mark formed on the substrate. 
   
   
     12. The apparatus for manufacturing a semiconductor device according to  claim 10 , wherein a wavelength of light emitted by the heating portion has a wavelength range in which the substrate or a thin film formed on the substrate has an absorbance larger than 0. 
   
   
     13. The apparatus for manufacturing a semiconductor device according to  claim 10 , wherein the heating portion is an irradiating section of the alignment mark measuring optical system. 
   
   
     14. The apparatus for manufacturing a semiconductor device according to  claim 13 , wherein the alignment mark measuring optical system further comprises a light intensity adjusting mechanism which adjusts an intensity of light applied to the photosensitive film. 
   
   
     15. The apparatus for manufacturing a semiconductor device according to  claim 10 , wherein the on-mask inspection mark area further includes an on-mask focal-position detection pattern to form a latent image of a focal-position detection pattern on the region, and the alignment mark measuring optical system measures a length of the latent image of the focal-position detection pattern. 
   
   
     16. The apparatus for manufacturing a semiconductor device according to  claim 10  wherein the on-mask inspection mark area further includes an on-mask luminous-exposure detection pattern to form a latent image of luminous-exposure detection pattern on the region, and the alignment mark measuring optical system measures a length of the latent image of the luminous-exposure detection pattern.