Method of forming silicon oxide containing films

Abstract

A method of forming a silicon oxide film, comprising the steps of: providing a substrate into a reaction chamber; injecting into the reaction chamber at least one silicon containing compound where the at least one silicon containing compound is bis(diethylamino)silane; injecting Oxygen into the reaction chamber and at least one other O-containing gas selected from ozone and water; reacting in the reaction chamber by chemical vapor deposition at a temperature below 400 C the at least one silicon containing compound and the at least one oxygen containing gas in order to obtain the silicon oxide film deposited onto the substrate.

What is claimed is: 
     
       1. A method of forming a silicon oxide film comprising the steps of:
 a) providing a substrate into a reaction chamber; 
 b) injecting into the reaction chamber at least one silicon containing compound where the at least one silicon containing compound is bis(diethylamino)silane; 
 c) injecting into the reaction chamber Oxygen and at least one O-containing gas selected from ozone and water; 
 d) reacting in the reaction chamber by chemical vapor deposition at a temperature below 400 C the at least one silicon containing compound and the oxygen and at least one oxygen containing gas in order to obtain the silicon oxide film deposited onto the substrate. 
 
     
     
       2. The method of  claim 1 , wherein the silicon oxide film forms shallow trench insulation. 
     
     
       3. The method of  claim 1 , wherein the silicon oxide film forms an inter layer dielectric. 
     
     
       4. The method of  claim 1 , wherein the silicon oxide film forms a passivation layer. 
     
     
       5. The method of  claim 1 , wherein the silicon oxide film forms an etch stop layer. 
     
     
       6. The method of  claim 1 , wherein the silicon oxide film forms part of a dual spacer. 
     
     
       7. The method of  claim 1 , wherein the temperature is below 300 C.