High linearity SOI wafer for low-distortion circuit applications

Abstract

According to a method herein, a first side of a substrate is implanted with a first material to change a crystalline structure of the first side of the substrate from a first crystalline state to a second crystalline state, after the first material is implanted. A second material is deposited on the first side of the substrate, after the first material is implanted. A first side of an insulator layer is bonded to the second material on the first side of the substrate. Integrated circuit devices are formed on a second side of the insulator layer, opposite the first side of the insulator layer, after the insulator layer is bonded to the second material. The integrated circuit devices are thermally annealed. The first material maintains the second crystalline state of the first side of the substrate during the annealing.

What is claimed is: 
     
       1. A method, comprising:
 implanting a first side of a substrate with a first material to change a crystalline structure of said first side of said substrate from a first crystalline state to a second crystalline state, after implanting said first material; 
 depositing a second material on said first side of said substrate, after said implanting; 
 bonding a first side of an insulator layer to said second material on said first side of said substrate; 
 forming integrated circuit devices on a second side of said insulator layer, opposite said first side of said insulator layer, after said bonding; and 
 thermally annealing said integrated circuit devices, 
 said first material maintaining said second crystalline state of said first side of said substrate during said annealing. 
 
     
     
       2. The method according to  claim 1 , said first material comprising one or more of:
 argon (Ar); 
 neon (Ne); 
 helium (He); 
 xenon (Xe); 
 krypton (Kr); 
 carbon (C); and 
 nitrogen (N). 
 
     
     
       3. The method according to  claim 1 , said second material comprising one or more of:
 poly-silicon (Si); 
 poly-germanium (Ge); 
 poly-silicon-germanium (SiGe); and 
 poly-silicon carbide (SiC). 
 
     
     
       4. The method according to  claim 1 , said second crystalline state comprising damage to said first side of said substrate, said first material maintaining said damage in said first side of said substrate during said annealing. 
     
     
       5. The method according to  claim 1 , said depositing said second material forming electrical charge traps on said first side of said substrate, said electrical charge traps suppressing parasitic conduction in said substrate degrading performance of said integrated circuit devices. 
     
     
       6. The method according to  claim 1 , said first material preventing said first side of said substrate from changing from said second crystalline state to said first crystalline state during said annealing, and
 said first material inhibiting recrystallization of said second material during said annealing. 
 
     
     
       7. A method, comprising:
 implanting a first side of a substrate with a first material to change a crystalline structure of said first side of said substrate from a first crystalline state to a second crystalline state, after implanting said first material; 
 depositing a second material on said first side of said substrate, after said implanting; 
 implanting a third material into a top surface of said second material, producing an implanted top surface of said second material; 
 bonding a first side of an insulator layer to said implanted top surface of said second material; 
 forming integrated circuit devices on a second side of said insulator layer, opposite said first side of said insulator layer, after said bonding; and 
 thermally annealing said integrated circuit devices, 
 said first material maintaining said second crystalline state of said first side of said substrate during said annealing. 
 
     
     
       8. The method according to  claim 7 , said first material comprising one or more of:
 argon (Ar); 
 neon (Ne); 
 helium (He); 
 xenon (Xe); 
 krypton (Kr); 
 carbon (C); and 
 nitrogen (N). 
 
     
     
       9. The method according to  claim 7 , said second material comprising one or more of:
 poly-silicon (Si); 
 poly-germanium (Ge); 
 poly-silicon-germanium (SiGe); and 
 poly-silicon carbide (SiC). 
 
     
     
       10. The method according to  claim 7 , said third material comprising one or more of:
 argon (Ar); 
 neon (Ne); 
 helium (He); 
 xenon (Xe); 
 krypton (Kr); 
 carbon (C); and 
 nitrogen (N). 
 
     
     
       11. The method according to  claim 7 , said second crystalline state comprising damage to said first side of said substrate, said first material maintaining said damage in said first side of said substrate during said annealing. 
     
     
       12. The method according to  claim 7 , said depositing said second material forming electrical charge traps on said first side of said substrate, said electrical charge traps suppressing parasitic conduction in said substrate degrading performance of said integrated circuit devices. 
     
     
       13. The method according to  claim 7 , said first material preventing said first side of said substrate from changing from said second crystalline state to said first crystalline state during said annealing, and
 said first material inhibiting recrystallization of said second material during said annealing. 
 
     
     
       14. The method according to  claim 7 , said second material providing a trap-rich layer to insulate said substrate from said integrated circuit devices. 
     
     
       15. A method, comprising:
 providing a substrate having a top surface on a first side of said substrate, said substrate comprising high resistivity silicon; 
 implanting a first material into said top surface of said substrate, producing an implanted top surface of said substrate, said implanting changing a crystalline structure of said first side of said substrate from a first crystalline state to a second crystalline state; 
 depositing a second material on said implanted top surface of said substrate; 
 bonding a first side of an insulator layer to said implanted top surface of said substrate; and 
 forming integrated circuit devices on a second side of said insulator layer, opposite said first side of said insulator layer, after said bonding. 
 
     
     
       16. The method according to  claim 15 , further comprising:
 after said depositing said second material on said implanted top surface of said substrate, implanting a third material into a top surface of said second material, producing an implanted top surface of said second material; and 
 bonding said first side of said insulator layer to said implanted top surface of said second material. 
 
     
     
       17. The method according to  claim 15 , further comprising:
 thermally annealing said integrated circuit devices. 
 
     
     
       18. The method according to  claim 17 , said second crystalline state comprising damage to said first side of said substrate, said first material inhibiting recrystallization of said first side of said substrate and said second material during said annealing. 
     
     
       19. The method according to  claim 15 , said depositing said second material forming a trap-rich layer on said first side of said substrate. 
     
     
       20. The method according to  claim 19 , said trap-rich layer insulating said substrate from said integrated circuit devices.