Cointegration of bulk and SOI semiconductor devices

Abstract

A method of forming a semiconductor device structure includes providing a substrate with a semiconductor-on-insulator (SOI) configuration, the SOI substrate comprising a semiconductor layer formed on a buried oxide (BOX) layer which is disposed on a semiconductor bulk substrate, forming trench isolation structures delineating a first region and a second region within the SOI substrate, removing the semiconductor layer and the BOX layer in the first region for exposing the semiconductor bulk substrate within the first region, forming a first semiconductor device with an electrode in and over the exposed semiconductor bulk substrate in the first region, forming a second semiconductor device in the second region, the second semiconductor device comprising a gate structure disposed over the semiconductor layer and the BOX layer in the second region, and performing a polishing process for defining a common height level to which the electrode and the gate structure substantially extend.

What is claimed: 
     
       1. A method of forming a semiconductor device structure, the method comprising:
 providing a substrate with a semiconductor-on-insulator (SOI) configuration, said SOI substrate comprising a semiconductor layer formed on a buried oxide (BOX) layer which is disposed on a semiconductor bulk substrate; 
 forming trench isolation structures delineating a first region and a second region within said SOI substrate; 
 removing said semiconductor layer and said BOX layer in said first region for exposing said semiconductor bulk substrate within said first region; 
 forming a first semiconductor device with an electrode in and over said exposed semiconductor bulk substrate in said first region; 
 forming a second semiconductor device in said second region, said second semiconductor device comprising a gate structure disposed over said semiconductor layer and said BOX layer in said second region; and 
 performing a polishing process for defining a common height level to which said electrode and said gate structure both substantially extend. 
 
     
     
       2. The method of  claim 1 , wherein said gate structure is formed in accordance with gate-last techniques, comprising forming a dummy gate structure over said second region and replacing said dummy gate structure by said gate structure. 
     
     
       3. The method of  claim 2 , wherein said first semiconductor device comprises a second gate structure which is formed in accordance with gate-last techniques. 
     
     
       4. The method of  claim 3 , wherein said first and second semiconductor devices are NMOS devices. 
     
     
       5. The method of  claim 1 , wherein said first semiconductor device is one of a transistor device, a resistor device and a capacitor device. 
     
     
       6. The method of  claim 2 , wherein said dummy gate structure comprises tungsten. 
     
     
       7. A method of forming a semiconductor device structure with a bulk semiconductor device and an SOI semiconductor device, the method comprising:
 providing a substrate with a semiconductor-on-insulator (SOI) configuration, wherein said SOI substrate comprises a semiconductor layer formed on a buried oxide (BOX) layer which is disposed on a semiconductor bulk substrate; 
 forming trench isolation structures delineating a first region and a second region within said SOI substrate; 
 exposing said semiconductor bulk substrate within said first region; 
 forming said bulk semiconductor device in and over said exposed semiconductor bulk substrate in said first region, said bulk semiconductor device comprising a first gate structure over said exposed semiconductor bulk substrate in said first region; 
 forming said SOI semiconductor device in said second region, said SOI semiconductor device comprising a second gate structure disposed over said semiconductor layer and said BOX layer in said second region; and 
 performing a polishing process for defining a common height level to which said first and second gate structures substantially extend. 
 
     
     
       8. The method of  claim 7 , wherein said first and second gate structures are formed in accordance with gate-last techniques by forming first and second dummy gate structures over respective ones of said first and second regions and replacing said dummy gate structures by said first and second gate structures before performing said polishing process. 
     
     
       9. The method of  claim 8 , wherein said first and second dummy gate structures are formed by depositing a dummy gate material stack over said first and second regions and polishing said deposited dummy gate material stack back to a height level greater than said mutual height level before patterning said dummy gate material stack. 
     
     
       10. The method of  claim 9 , wherein said dummy gate material stack comprises tungsten. 
     
     
       11. The method of  claim 9 , further comprising forming a masking pattern over said deposited dummy gate stack material and applying an etch process to said bulk semiconductor device and said SOI semiconductor device for forming said first and second dummy gate structures in accordance with said masking pattern. 
     
     
       12. The method of  claim 11 , wherein said etch process comprises a first etch step and said dummy gate material stack comprises a lowermost oxide liner acting as an etch stop during said first etch step, wherein said deposited dummy gate material stack is substantially uniformly etched over said first and second regions until said oxide liner is exposed in said second region. 
     
     
       13. The method of  claim 12 , wherein, subsequently to said first etch step, a block mask is formed over said first and second regions, said block mask covering said second region and leaving said first region exposed, and a second etch stop is applied to said bulk semiconductor device in accordance with said block mask for exposing said oxide liner in said first region. 
     
     
       14. The method of  claim 13 , wherein said block mask partially leaves said trench isolation structures delineating said first region exposed. 
     
     
       15. The method of  claim 9 , further comprising forming raised source/drain regions in said first and second regions in alignment with said first and second dummy gate structures and said STI regions by epitaxially growing doped silicon material on said first and second regions.