Semiconductor device and method of forming interposer frame over semiconductor die to provide vertical interconnect

Abstract

A semiconductor device has a first semiconductor die mounted over a carrier. An interposer frame has an opening in the interposer frame and a plurality of conductive pillars formed over the interposer frame. The interposer is mounted over the carrier and first die with the conductive pillars disposed around the die. A cavity can be formed in the interposer frame to contain a portion of the first die. An encapsulant is deposited through the opening in the interposer frame over the carrier and first die. Alternatively, the encapsulant is deposited over the carrier and first die and the interposer frame is pressed against the encapsulant. Excess encapsulant exits through the opening in the interposer frame. The carrier is removed. An interconnect structure is formed over the encapsulant and first die. A second semiconductor die can be mounted over the first die or over the interposer frame.

What is claimed: 
     
       1. A method of making a semiconductor device, comprising:
 providing a carrier; 
 mounting a first semiconductor die over the carrier; 
 providing an interposer frame including,
 a substrate, 
 an opening in the interposer frame substrate, 
 a plurality of conductive vias formed through the substrate, and 
 a plurality of conductive pillars formed over the interposer frame substrate and electrically connected to the conductive vias; 
 
 mounting the interposer frame over the carrier and first semiconductor die including disposing the conductive pillars around the first semiconductor die; 
 depositing an encapsulant through the opening in the interposer frame and over the carrier and first semiconductor die; 
 removing the carrier; and 
 forming an interconnect structure over the encapsulant and first semiconductor die. 
 
     
     
       2. The method of  claim 1 , further including forming a cavity in the interposer frame to contain a portion of the first semiconductor die. 
     
     
       3. The method of  claim 1 , further including forming alignment marks over the carrier to assist with mounting the interposer frame. 
     
     
       4. The method of  claim 1 , further including mounting a second semiconductor die over the first semiconductor die prior to depositing the encapsulant. 
     
     
       5. The method of  claim 1 , further including mounting a second semiconductor die over the interposer frame. 
     
     
       6. The method of  claim 5 , further including forming a bond wire between the second semiconductor die and the interposer frame. 
     
     
       7. A method of making a semiconductor device, comprising:
 providing a carrier; 
 mounting a first semiconductor die over the carrier; 
 depositing an encapsulant over the carrier and first semiconductor die; 
 providing an interposer frame including an opening in the interposer frame and a plurality of conductive pillars formed over the interposer frame; 
 mounting the interposer frame over the carrier and first semiconductor die by pressing the interposer frame against the encapsulant; 
 removing the carrier; and 
 forming an interconnect structure over the encapsulant and first semiconductor die. 
 
     
     
       8. The method of  claim 7 , wherein excess encapsulant exits through the opening in the interposer frame. 
     
     
       9. The method of  claim 7 , wherein the conductive pillars are disposed around the first semiconductor die. 
     
     
       10. The method of  claim 7 , further including forming a cavity in the interposer frame to contain a portion of the first semiconductor die. 
     
     
       11. The method of  claim 7 , further including mounting a second semiconductor die over the first semiconductor die prior to depositing the encapsulant. 
     
     
       12. The method of  claim 7 , further including mounting a second semiconductor die over the interposer frame. 
     
     
       13. The method of  claim 12 , further including forming a bond wire between the second semiconductor die and the interposer frame. 
     
     
       14. A method of making a semiconductor device, comprising:
 providing a first semiconductor die; 
 providing an interposer frame including an opening in the interposer frame, a conductive via formed through the interposer frame, and a plurality of conductive pillars formed over the interposer frame; 
 mounting the interposer frame over the first semiconductor die including disposing the conductive pillars around the first semiconductor die; 
 depositing an encapsulant over the first semiconductor die; and 
 forming an interconnect structure over the encapsulant and first semiconductor die. 
 
     
     
       15. The method of  claim 14 , further including:
 depositing the encapsulant over the first semiconductor die prior to mounting the interposer frame; and 
 pressing the interposer frame against the encapsulant. 
 
     
     
       16. The method of  claim 15 , wherein excess encapsulant exits through the opening in the interposer frame. 
     
     
       17. The method of  claim 14 , further including depositing the encapsulant through the opening in the interposer frame over the first semiconductor die. 
     
     
       18. The method of  claim 14 , further including forming a cavity in the interposer frame to contain a portion of the first semiconductor die. 
     
     
       19. The method of  claim 14 , further including mounting a second semiconductor die over the first semiconductor die prior to depositing the encapsulant. 
     
     
       20. The method of  claim 14 , further including mounting a second semiconductor die over the interposer frame.