Lithography system, method of clamping and wafer table

Abstract

The invention relates to a lithography system, for example for projecting an image or an image pattern on to a target (1) such as a wafer, said target being included in said system by means of a target table (2), clamping means being present for clamping said target on said table. Said clamping means comprises a layer of stationary liquid (3), included at such thickness between target and target table that, provided the material of the liquid (C) and of the respective contacting faces (A, B) of the target (1) and target table (2), a pressure drop (PCap) arises.

The invention claimed is: 
     
       1. Wafer table ( 8 ) for supporting a wafer ( 1 ) during processing of said wafer in a lithography system, said wafer table ( 8 ) having a top side ( 2 ) provided with burls ( 7 ) for supporting said wafer ( 1 ), wherein said burls have a height above said top side, said wafer table ( 8 ) comprising a circumferential gutter located circumferential and directly adjacent to a wafer carrying part ( 2 ) of the wafer table, said gutter having a width larger than the height of said burls ( 7 ), wherein an outer rim of said wafer table comprises a ring having a fixed position on said outer rim and which is arranged for leaving a very small vertical distance ( 9 B) to said wafer ( 1 ) when said wafer ( 1 ) is supported by the burls ( 7 ),
 wherein said gutter is arranged below a plane defined by said top side in a manner that liquid is flowable in said gutter from said top side, and wherein said ring is arranged circumferential to said gutter, wherein the gutter is arranged on the inside of the ring, and said ring extends at least partially above said plane, 
 wherein said wafer table is adapted for being moved into and out of the lithography system while the wafer is clamped to the wafer table by means of a stationary layer of liquid which is spaced apart from the gutter and arranged in a gap between the top side of the wafer table and a bottom side of the wafer. 
 
     
     
       2. Wafer table according to  claim 1 , wherein said burls ( 7 ) have a height for maintaining a nominal mutual distance of between 0, 1 0.1 and 10 μm between said wafer ( 1 ) and said top side ( 2 ) of said wafer table ( 8 ). 
     
     
       3. Wafer table according to  claim 1  or  claim 2 , wherein said ring largely closes off a circumferential gap ( 9 B) between said wafer table ( 8 ) and a the wafer ( 8 ) (1) supported by said burls ( 7 ). 
     
     
       4. Wafer table according to  claim 1 , wherein said very small vertical distance ( 9 B) is  10  to  20  times smaller than the height of said burls. 
     
     
       5. Wafer table according to  claim 1 , wherein said wafer table ( 8 ) is provided with a plurality of circumferentially present openings ( 10 B). 
     
     
       6. Wafer table according to  claim 5 , wherein said plurality of circumferentially present openings ( 10 B) are included in said gutter. 
     
     
       7. Wafer table according to  claim 1 , wherein said burls ( 7 ) are dispersed uniformly over said wafer table ( 8 ). 
     
     
       8. Wafer table according to  claim 1 , wherein said wafer table ( 8 ) encompasses the presence of one or more openings that can be opened for release of fluid from said wafer table ( 8 ). 
     
     
       9. Wafer table according to  claim 1 , wherein said wafer table is adapted for being moved into and out of a vacuum environment of the lithography system while the wafer is clamped to the wafer table by means of a stationary layer of liquid which is spaced apart from the gutter and arranged in a gap between the top side of the wafer table and a bottom side of the wafer. 
     
     
       10. Lithography system comprising a wafer table according to  claim 1  or  claim 9 . 
     
     
       11. Wafer table according to  claim 1  or  9 , wherein the ring has an outer diameter that is greater than the diameter of the wafer, and has an inner diameter that is smaller than the diameter of the wafer. 
     
     
       12. Wafer table according to  claim 1  or  9 , wherein, when said wafer is supported by said burls, no part of the wafer table projects past a top face of said wafer. 
     
     
       13. Wafer table according to  claim 1  or  9 , wherein no part of the wafer table projects past the end of said burls that is arranged for contacting the wafer. 
     
     
       14. Lithography system according to  claim 10 , further comprising dispensing means for dispensing liquid on said top side ( 2 ) of the wafer table ( 8 ). 
     
     
       15. Lithography system according to  claim 10 , further comprising a the wafer ( 1 ) supported by said burls ( 7 ) of said wafer table ( 8 ), wherein a the stationary layer of liquid ( 3 ) is included between said wafer table ( 8 ) and said wafer ( 2 ) (1), said stationary layer of liquid contacting both said wafer table ( 8 ) and said wafer ( 1 ), and wherein said stationary layer of liquid ( 3 ) has a thickness which is defined by the height of said burls ( 7 ). 
     
     
       16. Lithography system according to  claim 10 , wherein said stationary layer of liquid ( 3 ) is a layer of water. 
     
     
       17. Lithography system according to  claim 10 , adapted for projecting wherein the lithography system is configured to project an image or an image pattern onto said wafer ( 1 ) supported by said wafer table ( 8 ). 
     
     
       18. Lithography system according to  claim 10 , adapted for moving said wafer table and wafer ( 1 ) clamped thereon relative to a beam source for lithography, by means of an actuated target table or chuck, wherein said wafer table ( 8 ) is adapted for loose inclusion in said lithography system without connection of conduits to said wafer table, for treating said wafer ( 1 ) carried by the wafer table ( 8 ). 
     
     
       19. Lithography system according to  claim 10 , comprising a vacuum environment for processing said wafer while said wafer is clamped to the wafer table by the stationary layer of liquid. 
     
     
       20. A charged particle exposure apparatus configured to expose a charged particle beam on a wafer, the apparatus comprising:
 a vacuum environment configured to operate in vacuum conditions;   a first wafer table configured to support a first wafer and be removable from the vacuum environment, wherein the first wafer table is thermally conditioned prior to being placed in the vacuum environment;   a second wafer table configured to support a second wafer and be removable from the vacuum environment, wherein the second wafer table is thermally conditioned prior to being placed in the vacuum environment;   wherein the charged particle exposure apparatus is configured to expose a charged particle beam on the first wafer on the thermally conditioned first wafer table when the wafer is positioned in the vacuum environment, and wherein, after the first wafer is exposed, the first wafer table supporting the first wafer is removed from the vacuum environment and the thermally conditioned second wafer table supporting the second wafer is inserted into the vacuum environment for exposing the second wafer.   
     
     
       21. The charged particle exposure apparatus of claim 20, wherein the first wafer table includes a first clamping mechanism that enables clamping the first wafer to the first wafer table when the first wafer table is positioned outside of the vacuum environment. 
     
     
       22. The charged particle exposure apparatus of claim 20, wherein the second wafer table includes a second clamping mechanism that enables clamping the second wafer to the second wafer table when the second wafer table is positioned outside of the vacuum environment. 
     
     
       23. A method of exchanging a wafer in a charged particle exposure apparatus, wherein the charged particle exposure apparatus is configured to expose a charged particle beam on a wafer when the wafer is in a vacuum environment, the method comprising:
 placing a first wafer on a first wafer table;   thermally conditioning the first wafer table supporting the first wafer;   placing the thermally conditioned first wafer table and the first wafer in the vacuum environment;   exposing, in the vacuum environment, the first wafer to a charged particle beam; and   removing the first wafer table supporting the first wafer from the vacuum environment and inserting, into the vacuum environment, a thermally conditioned second wafer table supporting a second wafer for exposing the second wafer to a charged particle beam.   
     
     
       24. The method of claim 23, wherein placing the first wafer on the first wafer table further comprises clamping the first wafer on the first table outside of the vacuum environment.