Inventor · disambiguated record
Michael F. Pas
Also filed as: PAS MICHAEL · PAS MICHAEL F · PAS MICHAEL FRANCIS
21 granted patents·5 pending applications·202 citations·filing 1996–2018
95Inventor score
Top patents by PatentIndex Score
26 records- 0196US7795097B2Semiconductor device manufactured by removing sidewalls during replacement gate integration schemeTEXAS INSTRUMENTS INC·Filed 2007·Granted Sep 14, 2010·60 cites·18 claims
- 0288US7416949B1Fabrication of transistors with a fully silicided gate electrode and channel strainTEXAS INSTRUMENTS INC·Filed 2007·Granted Aug 26, 2008·14 cites·15 claims
- 0386US7642153B2Methods for forming gate electrodes for integrated circuitsTEXAS INSTRUMENTS INC·Filed 2007·Granted Jan 5, 2010·13 cites·25 claims
- 0484US8114728B2Integration scheme for an NMOS metal gatePAS MICHAEL FRANCIS·Filed 2010·Granted Feb 14, 2012·8 cites·17 claims
- 0582US8749115B2Dynamically adjustable orthotic deviceTEXAS INSTRUMENTS INC·Filed 2013·Granted Jun 10, 2014·16 cites·4 claims
- 0678US7858459B2Work function adjustment with the implant of lanthanidesTEXAS INSTRUMENTS INC·Filed 2007·Granted Dec 28, 2010·5 cites·4 claims
- 0775US7807522B2Lanthanide series metal implant to control work function of metal gate electrodesTEXAS INSTRUMENTS INC·Filed 2007·Granted Oct 5, 2010·6 cites·12 claims
- 0875US7629212B2Doped WGe to form dual metal gatesTEXAS INSTRUMENTS INC·Filed 2007·Granted Dec 8, 2009·6 cites·20 claims
- 0974US10068786B1Data structures for semiconductor die packagingTEXAS INSTRUMENTS INC·Filed 2017·Granted Sep 4, 2018·3 cites·20 claims
- 1073US8525386B2Dynamically adjustable orthotic devicePAS SYLVIA D·Filed 2009·Granted Sep 3, 2013·16 cites·22 claims
- 1169US8304333B2Method of forming a high-k gate dielectric layerRAMIN MANFRED·Filed 2010·Granted Nov 6, 2012·2 cites·11 claims
- 1269US6054684AUltra fast temperature ramp up and down in a furnace using interleaving shuttersTEXAS INSTRUMENTS INC·Filed 1997·Granted Apr 25, 2000·23 cites·5 claims
- 1368US7531398B2Methods and devices employing metal layers in gates to introduce channel strainTEXAS INSTRUMENTS INC·Filed 2006·Granted May 12, 2009·4 cites·29 claims
- 1463US8304342B2Sacrificial CMP etch stop layerPAS MICHAEL FRANCIS·Filed 2006·Granted Nov 6, 2012·3 cites·26 claims
- 1563US7799669B2Method of forming a high-k gate dielectric layerTEXAS INSTRUMENTS INC·Filed 2007·Granted Sep 21, 2010·1 cites·23 claims
- 1660US8748246B2Integration scheme for dual work function metal gatesRAMIN MANFRED·Filed 2010·Granted Jun 10, 2014·1 cites·27 claims
- 1755US5803980ADe-ionized water/ozone rinse post-hydrofluoric processing for the prevention of silicic acid residueTEXAS INSTRUMENTS INC·Filed 1996·Granted Sep 8, 1998·21 cites·12 claims
- 1855US2014315377A1Work function adjustment with the implant of lanthanidesTEXAS INSTRUMENTS INC·Filed 2014·Application pending·0 cites
- 1954US8802519B2Work function adjustment with the implant of lanthanidesTEXAS INSTRUMENTS INC·Filed 2013·Granted Aug 12, 2014·0 cites·3 claims
- 2050US2009039439A1Integration Scheme for Dual Work Function Metal GatesTEXAS INSTRUMENTS INC·Filed 2008·Application pending·0 cites
- 2149US10658211B2Data structures for semiconductor die packagingTEXAS INSTRUMENTS INC·Filed 2018·Granted May 19, 2020·0 cites·26 claims
- 2249US2008283941A1Fabrication of transistors with a fully silicided gate electrode and channel strainTEXAS INSTRUMENTS INC·Filed 2008·Application pending·0 cites
- 2348US8409943B2Work function adjustment with the implant of lanthanidesRAMIN MANFRED·Filed 2010·Granted Apr 2, 2013·0 cites·14 claims
- 2448US2010173502A1LOW k1 HOLE PRINTING USING TWO INTERSECTING FEATURESPAS MICHAEL FRANCIS·Filed 2009·Application pending·0 cites
- 2548US2008237743A1Integration Scheme for Dual Work Function Metal GatesTEXAS INSTRUMENTS INC·Filed 2007·Application pending·0 cites
- 2647US8629021B2Integration scheme for an NMOS metal gatePAS MICHAEL FRANCIS·Filed 2007·Granted Jan 14, 2014·0 cites·17 claims
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