Inventor · disambiguated record
Shinji Yuasa
Also filed as: YUASA SHINJI
40 granted patents·16 pending applications·430 citations·filing 2000–2024
98Inventor score
Files withAIST8JAPAN SCIENCE & TECH AGENCY8TOSHIBA KK7NAT INST OF ADVANCED IND SCIEN6CANON ANELVA CORP4
Top patents by PatentIndex Score
56 records- 0196US11233193B2Method of manufacturing a magnetorestive random access memeory (MRAM)JAPAN SCIENCE & TECH AGENCY·Filed 2020·Granted Jan 25, 2022·3 cites·20 claims
- 0296US10367138B2Magnetic tunnel junction deviceJAPAN SCIENCE & TECH AGENCY·Filed 2017·Granted Jul 30, 2019·4 cites·14 claims
- 0396US9608198B2Magnetic tunnel junction deviceJAPAN SCIENCE & TECH AGENCY·Filed 2015·Granted Mar 28, 2017·5 cites·6 claims
- 0496US7514160B2Tunnel magnetoresistance element having a double underlayer of amorphous MgO and crystalline MgO(001)NAT INST OF ADVANCED IND SCIEN·Filed 2007·Granted Apr 7, 2009·50 cites·6 claims
- 0595US8680632B2Magnetoresistive element and magnetic memoryDAIBOU TADAOMI·Filed 2011·Granted Mar 25, 2014·25 cites·19 claims
- 0695US8319263B2Magnetic tunnel junction deviceYUASA SHINJI·Filed 2010·Granted Nov 27, 2012·12 cites·4 claims
- 0795US6710986B1Tunneling magnetoresistive head and a process of tunneling magnetoresistive headHITACHI LTD·Filed 2000·Granted Mar 23, 2004·55 cites·17 claims
- 0894US8405134B2Magnetic tunnel junction deviceYUASA SHINJI·Filed 2012·Granted Mar 26, 2013·14 cites·4 claims
- 0994US7884403B2Magnetic tunnel junction device and memory device including the sameJAPAN SCIENCE & TECH AGENCY·Filed 2005·Granted Feb 8, 2011·22 cites·8 claims
- 1093US8107281B2Magnetoresistive element and magnetic memoryKAI TADASHI·Filed 2010·Granted Jan 31, 2012·23 cites·12 claims
- 1193US7764136B2Microwave transmission line integrated microwave generating element and microwave transmission line integrated microwave detecting elementJAPAN SCIENCE & TECH AGENCY·Filed 2006·Granted Jul 27, 2010·56 cites·7 claims
- 1292US10680167B2Magnetic tunnel junction deviceJAPAN SCIENCE & TECH AGENCY·Filed 2019·Granted Jun 9, 2020·3 cites·15 claims
- 1391US10388347B2Non-collinear magnetoresistive deviceAIST·Filed 2016·Granted Aug 20, 2019·6 cites·8 claims
- 1491US9123463B2Magnetic tunnel junction deviceJAPAN SCIENCE & TECH AGENCY·Filed 2013·Granted Sep 1, 2015·7 cites·2 claims
- 1591US7220498B2Tunnel magnetoresistance elementJAPAN SCIENCE & TECH AGENCY·Filed 2002·Granted May 22, 2007·44 cites·6 claims
- 1690US2024284804A1Method of manufacturing a magnetoresistive random access memory (mram)GODO KAISHA IP BRIDGE 1·Filed 2024·Application pending·0 cites
- 1789US9087980B2Magnetoresistive element and magnetic memoryTOSHIBA KK·Filed 2014·Granted Jul 21, 2015·8 cites·19 claims
- 1889US8208292B2Magnetoresistive element and magnetic memoryKAI TADASHI·Filed 2012·Granted Jun 26, 2012·13 cites·15 claims
- 1987US9219227B2Magnetoresistive element and magnetic memoryTOSHIBA KK·Filed 2014·Granted Dec 22, 2015·6 cites·20 claims
- 2087US2023413685A1Method of manufacturing a magnetoresistive random access memory (mram)GODO KAISHA IP BRIDGE 1·Filed 2023·Application pending·0 cites
- 2186US11968909B2Method of manufacturing a magnetoresistive random access memory (MRAM)GODO KAISHA IP BRIDGE 1·Filed 2023·Granted Apr 23, 2024·0 cites·20 claims
- 2284US8934290B2Magnetoresistance effect device and method of production of the sameCANON ANELVA CORP·Filed 2013·Granted Jan 13, 2015·3 cites·3 claims
- 2384US8013408B2Negative-resistance device with the use of magneto-resistive effectCANON ANELVA CORP·Filed 2009·Granted Sep 6, 2011·11 cites·9 claims
- 2482US8705269B2Magnetoresistive element and magnetic memoryNAGASE TOSHIHIKO·Filed 2011·Granted Apr 22, 2014·6 cites·18 claims
- 2581US8502331B2Magnetoresistive effect element, magnetic memoryKITAGAWA EIJI·Filed 2011·Granted Aug 6, 2013·5 cites·14 claims
- 2680US11737372B2Method of manufacturing a magnetoresistive random access memory (MRAM)GODO KAISHA IP BRIDGE 1·Filed 2021·Granted Aug 22, 2023·0 cites·8 claims
- 2779US6958940B2Nonvolatile semiconductor memory device capable of realizing optimized erasing operation in a memory arrayHITACHI ULSI SYS CO LTD·Filed 2002·Granted Oct 25, 2005·23 cites·18 claims
- 2876US8521795B2Random number generating deviceFUKUSHIMA AKIO·Filed 2008·Granted Aug 27, 2013·8 cites·12 claims
- 2975US7095657B2Nonvolatile semiconductor memory device capable of realizing optimized erasing operation in a memory arrayHITACHI ULSI SYSTEMS CO INC·Filed 2005·Granted Aug 22, 2006·10 cites·7 claims
- 3072US8394649B2Method of production of a magnetoresistance effect deviceDJAYAPRAWIRA DAVID D·Filed 2008·Granted Mar 12, 2013·6 cites·4 claims
- 3165US10319902B2Magnetoresistive deviceAIST·Filed 2018·Granted Jun 11, 2019·1 cites·8 claims
- 3254US10431303B2Resistance change type memory including write control circuit to control write to variable resistance elementAIST·Filed 2017·Granted Oct 1, 2019·1 cites·18 claims
- 3351US9230628B2Magnetic memoryTOSHIBA KK·Filed 2014·Granted Jan 5, 2016·0 cites·22 claims
- 3451US2015280111A1Magnetic multilayer film and tunneling magnetoresistance elementNAT INST OF ADVANCED IND SCIEN·Filed 2013·Application pending·0 cites
- 3550US8750666B2Optical device using a plasmonic waveguide, and optical isolatorNAT INST OF ADVANCED IND SCIEN·Filed 2013·Granted Jun 10, 2014·0 cites·20 claims
- 3649US10998490B2Magnetic elementAIST·Filed 2018·Granted May 4, 2021·0 cites·15 claims
- 3749US9437810B2Magnetoresistive element and magnetic memoryTOSHIBA KK·Filed 2014·Granted Sep 6, 2016·0 cites·14 claims
- 3848US2024298548A1Magnetoresistive element, magnetic sensor, and magnetic memorySONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2022·Application pending·0 cites
- 3948US2010181632A1Magnetic tunnel junction device and memory device including the sameNAT INST OF ADVANCED IND SCIEN·Filed 2010·Application pending·0 cites
- 4048US2013288397A1Magnetoresistive effect element, magnetic memory, and method of manufacturing magentoresistive effect elementTOSHIBA KK·Filed 2013·Application pending·0 cites
- 4147US8378437B2Magnetoresistive effect element and magnetic random access memoryTOSHIBA KK·Filed 2008·Granted Feb 19, 2013·0 cites·12 claims
- 4247US2008026253A1Cpp type giant magneto-resistance element and magnetic sensorNAT INST OF ADVANCED IND SCIEN·Filed 2007·Application pending·0 cites
- 4345US11133459B2Magnetic element, magnetic memory device, and magnetic sensorAIST·Filed 2018·Granted Sep 28, 2021·0 cites·13 claims
- 4445US2024395283A1Magnetic storage device provided with magnetoresistive elementAIST·Filed 2022·Application pending·0 cites
- 4544US2011094875A1Magnetoresistance effect device and method of production of the sameCANON ANELVA CORP·Filed 2011·Application pending·0 cites
- 4644US2009322419A1Amplifying apparatus using magneto-resistive deviceCANON ANELVA CORP·Filed 2009·Application pending·0 cites
- 4743US2008180862A1Method of production of a magnetoresistance effect deviceANELVA CORP·Filed 2008·Application pending·0 cites
- 4842US9620189B2Magnetic memoryTOSHIBA KK·Filed 2015·Granted Apr 11, 2017·0 cites·19 claims
- 4942US2008055793A1Magnetoresistance effect deviceANELVA CORP·Filed 2007·Application pending·0 cites
- 5040US2006056115A1Magnetoresistance effect device and method of production of the sameNAT INST OF ADVANCED IND SCIEN·Filed 2005·Application pending·0 cites
Showing the top 50 of 56 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →