Inventor · disambiguated record
Bhadri N. Varadarajan
Also filed as: VARADARAJAN BHADRI · VARADARAJAN BHADRI N
56 granted patents·23 pending applications·2,520 citations·filing 2004–2025
99Inventor score
Files withLAM RES CORP52NOVELLUS SYSTEMS INC18VARADARAJAN BHADRI5VARADARAJAN BHADRI N3LAVOIE ADRIEN1
Top patents by PatentIndex Score
79 records- 0199US11732350B2Films of desired composition and film propertiesNOVELLUS SYSTEMS INC·Filed 2022·Granted Aug 22, 2023·6 cites·20 claims
- 0299US11708634B2Films of desired composition and film propertiesNOVELLUS SYSTEMS INC·Filed 2022·Granted Jul 25, 2023·5 cites·27 claims
- 0399US11680314B2Films of desired composition and film propertiesNOVELLUS SYSTEMS INC·Filed 2022·Granted Jun 20, 2023·6 cites·29 claims
- 0499US11680315B2Films of desired composition and film propertiesNOVELLUS SYSTEMS INC·Filed 2022·Granted Jun 20, 2023·6 cites·30 claims
- 0599US9997357B2Capped ALD films for doping fin-shaped channel regions of 3-D IC transistorsLAM RES CORP·Filed 2014·Granted Jun 12, 2018·430 cites·22 claims
- 0699US9601693B1Method for encapsulating a chalcogenide materialLAM RES CORP·Filed 2015·Granted Mar 21, 2017·43 cites·19 claims
- 0799US8647993B2Methods for UV-assisted conformal film depositionLAVOIE ADRIEN·Filed 2012·Granted Feb 11, 2014·487 cites·18 claims
- 0898US11209729B2Vacuum-integrated hardmask processes and apparatusLAM RES CORP·Filed 2019·Granted Dec 28, 2021·21 cites·14 claims
- 0998US10831096B2Vacuum-integrated hardmask processes and apparatusLAM RES CORP·Filed 2018·Granted Nov 10, 2020·34 cites·18 claims
- 1098US10514598B2Vacuum-integrated hardmask processes and apparatusLAM RES CORP·Filed 2017·Granted Dec 24, 2019·33 cites·10 claims
- 1198US10002787B2Staircase encapsulation in 3D NAND fabricationLAM RES CORP·Filed 2017·Granted Jun 19, 2018·28 cites·18 claims
- 1298US9778561B2Vacuum-integrated hardmask processes and apparatusLAM RES CORP·Filed 2015·Granted Oct 3, 2017·380 cites·9 claims
- 1398US9234276B2Method to obtain SiC class of films of desired composition and film propertiesNOVELLUS SYSTEMS INC·Filed 2013·Granted Jan 12, 2016·42 cites·15 claims
- 1498US7214630B1PMOS transistor with compressive dielectric capping layerNOVELLUS SYSTEMS INC·Filed 2005·Granted May 8, 2007·511 cites·34 claims
- 1597US11894227B2Conformal deposition of silicon carbide filmsNOVELLUS SYSTEMS INC·Filed 2022·Granted Feb 6, 2024·4 cites·13 claims
- 1697US11608559B2Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film depositionLAM RES CORP·Filed 2021·Granted Mar 21, 2023·6 cites·20 claims
- 1797US10580690B2Staircase encapsulation in 3D NAND fabricationLAM RES CORP·Filed 2018·Granted Mar 3, 2020·15 cites·14 claims
- 1897US10559468B2Capped ALD films for doping fin-shaped channel regions of 3-D IC transistorsLAM RES CORP·Filed 2018·Granted Feb 11, 2020·13 cites·21 claims
- 1997US10472714B2Method to obtain SiC class of films of desired composition and film propertiesNOVELLUS SYSTEMS INC·Filed 2015·Granted Nov 12, 2019·14 cites·13 claims
- 2097US10325773B2Conformal deposition of silicon carbide filmsNOVELLUS SYSTEMS INC·Filed 2015·Granted Jun 18, 2019·22 cites·17 claims
- 2197US10211310B2Remote plasma based deposition of SiOC class of filmsVARADARAJAN BHADRI·Filed 2012·Granted Feb 19, 2019·20 cites·14 claims
- 2297US9837270B1Densification of silicon carbide film using remote plasma treatmentLAM RES CORP·Filed 2016·Granted Dec 5, 2017·62 cites·19 claims
- 2396US12359311B2Conformal deposition of silicon carbide films using heterogeneous precursor interactionLAM RES CORP·Filed 2023·Granted Jul 15, 2025·4 cites·15 claims
- 2496US11920239B2Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasmaLAM RES CORP·Filed 2022·Granted Mar 5, 2024·3 cites·15 claims
- 2596US10566186B2Methods of encapsulationLAM RES CORP·Filed 2018·Granted Feb 18, 2020·9 cites·17 claims
- 2696US10297442B2Remote plasma based deposition of graded or multi-layered silicon carbide filmLAM RES CORP·Filed 2016·Granted May 21, 2019·22 cites·20 claims
- 2796US9828672B2Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasmaLAM RES CORP·Filed 2015·Granted Nov 28, 2017·25 cites·19 claims
- 2896US9371579B2Ground state hydrogen radical sources for chemical vapor deposition of silicon-carbon-containing filmsLAM RES CORP·Filed 2013·Granted Jun 21, 2016·29 cites·20 claims
- 2995US11264234B2Conformal deposition of silicon carbide filmsNOVELLUS SYSTEMS INC·Filed 2019·Granted Mar 1, 2022·10 cites·20 claims
- 3095US10832904B2Remote plasma based deposition of oxygen doped silicon carbide filmsNOVELLUS SYSTEMS INC·Filed 2017·Granted Nov 10, 2020·12 cites·12 claims
- 3194US11101164B2Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film depositionLAM RES CORP·Filed 2020·Granted Aug 24, 2021·3 cites·24 claims
- 3294US10840087B2Remote plasma based deposition of boron nitride, boron carbide, and boron carbonitride filmsLAM RES CORP·Filed 2018·Granted Nov 17, 2020·15 cites·19 claims
- 3394US10157736B2Methods of encapsulationLAM RES CORP·Filed 2016·Granted Dec 18, 2018·13 cites·22 claims
- 3494US8512818B1Cascaded cure approach to fabricate highly tensile silicon nitride filmsVARADARAJAN BHADRI·Filed 2012·Granted Aug 20, 2013·21 cites·18 claims
- 3594US8211510B1Cascaded cure approach to fabricate highly tensile silicon nitride filmsVARADARAJAN BHADRI·Filed 2007·Granted Jul 3, 2012·33 cites·25 claims
- 3693US12000047B2Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film depositionLAM RES CORP·Filed 2023·Granted Jun 4, 2024·1 cites·20 claims
- 3793US10763107B2Methods of encapsulationLAM RES CORP·Filed 2020·Granted Sep 1, 2020·3 cites·20 claims
- 3893US10604841B2Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film depositionLAM RES CORP·Filed 2016·Granted Mar 31, 2020·7 cites·24 claims
- 3993US8465991B2Carbon containing low-k dielectric constant recovery using UV treatmentVARADARAJAN BHADRI N·Filed 2010·Granted Jun 18, 2013·19 cites·20 claims
- 4092US9418889B2Selective formation of dielectric barriers for metal interconnects in semiconductor devicesLAM RES CORP·Filed 2015·Granted Aug 16, 2016·8 cites·20 claims
- 4191US2025053080A1Vacuum-integrated hardmask processes and apparatusLAM RES CORP·Filed 2024·Application pending·0 cites
- 4290US7327001B1PMOS transistor with compressive dielectric capping layerNOVELLUS SYSTEMS INC·Filed 2007·Granted Feb 5, 2008·16 cites·24 claims
- 4389US11848199B2Doped or undoped silicon carbide deposition and remote hydrogen plasma exposure for gapfillLAM RES CORP·Filed 2019·Granted Dec 19, 2023·4 cites·31 claims
- 4487US12331402B2Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film depositionLAM RES CORP·Filed 2024·Granted Jun 17, 2025·0 cites·20 claims
- 4587US11761079B2Oxidation resistant protective layer in chamber conditioningLAM RES CORP·Filed 2018·Granted Sep 19, 2023·5 cites·14 claims
- 4687US9050623B1Progressive UV cureVARADARAJAN BHADRI N·Filed 2008·Granted Jun 9, 2015·13 cites·25 claims
- 4786US12334332B2Remote plasma based deposition of silicon carbide films using silicon-containing and carbon-containing precursorsLAM RES CORP·Filed 2018·Granted Jun 17, 2025·4 cites·18 claims
- 4885US12272547B2Conformal deposition of silicon carbide filmsNOVELLUS SYSTEMS INC·Filed 2023·Granted Apr 8, 2025·0 cites·9 claims
- 4985US11011379B2Capped ALD films for doping fin-shaped channel regions of 3-D IC transistorsLAM RES CORP·Filed 2019·Granted May 18, 2021·2 cites·12 claims
- 5084US2023273516A1Vacuum-integrated hardmask processes and apparatusLAM RES CORP·Filed 2023·Application pending·0 cites
Showing the top 50 of 79 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →