Vacuum-integrated hardmask processes and apparatus

Abstract

Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.

What is claimed is: 
     
         1 . A method of processing a substrate comprising:
 a) depositing a photosensitive metal-containing precursor on the substrate;   b) exposing the photosensitive metal-containing precursor to a patterning source with a wavelength in a range of 10 to 20 nm, wherein the exposing selectively exposes at least a portion of the photosensitive metal-containing precursor to form a patterned mask having exposed regions and unexposed regions on the substrate; and   c) selectively removing unexposed regions of the photosensitive metal-containing precursor relative to the patterned mask to form a mask on the substrate,   wherein the photosensitive metal-containing precursor comprises a metal that is less susceptible to secondary electron effect than conventional photoresist;   and wherein at least one of a), b) and c) are performed in a controlled ambient.   
     
     
         2 . The method of  claim 1 , wherein the photosensitive metal-containing precursor is exposed to the patterning source in presence of a patterning agent, and wherein the patterning agent comprises at least one of photons, electrons, protons, ions or neutral species. 
     
     
         3 . The method of  claim 1 , wherein the photosensitive metal-containing precursor comprises tin, antimony, hafnium, or a combination thereof. 
     
     
         4 . The method of  claim 3 , wherein the photosensitive metal-containing precursor comprises tin. 
     
     
         5 . The method of  claim 1 , wherein the exposing of the photosensitive metal-containing precursor decomposes the photosensitive metal-containing precursor into a non-volatile metal component and a volatile non-metal component, wherein the non-volatile metal component defines the patterned mask, and the volatile non-metal component is outgassed between b) and c). 
     
     
         6 . The method of  claim 5 , wherein the volatile non-metal component is outgassed at a pressure of 1E −8  Torr or less. 
     
     
         7 . The method of  claim 1 , wherein the photosensitive metal-containing precursor comprises an organometallic precursor, a metal halide precursor or a combination thereof. 
     
     
         8 . The method of  claim 1 , wherein selectively removing comprises developing the patterned mask. 
     
     
         9 . The method of  claim 8 , wherein developing the patterned mask comprises heating the substrate, wet etching, or a combination thereof. 
     
     
         10 . A structure comprising:
 a substrate and   a metal-containing film having a thickness of from about 5 nm to 200 nm,   wherein the metal-containing film is a strong absorber of Extreme Ultraviolet radiation, removable and sensitive to a patterning agent,   and wherein portions of the metal-containing film are removable by a developing agent.   
     
     
         11 . The structure of  claim 10 , wherein the patterning agent comprises photons, electrons, protons, or neutral species. 
     
     
         12 . The structure of  claim 10 , wherein the patterning agent comprises Extreme Ultraviolet photons. 
     
     
         13 . The structure of  claim 10 , wherein the patterning agent is a source of sub-30 nm wavelength radiation. 
     
     
         14 . The structure of  claim 10 , wherein the developing agent is wet chemistry. 
     
     
         15 . The structure of  claim 10 , wherein the metal-containing film comprises tin. 
     
     
         16 . The structure of  claim 15 , wherein the metal-containing film comprises tin-carbon bonds. 
     
     
         17 . A semiconductor substrate processing apparatus comprising:
 a deposition module configured to form a thin film of a metal-containing film integrated with   a lithography exposure tool; and   a transfer module configured to transfer a substrate between the deposition module and the lithography exposure tool.   
     
     
         18 . The semiconductor substrate processing apparatus of  claim 17 , wherein the deposition module and the lithography exposure tool are integrated without vacuum integration. 
     
     
         19 . The semiconductor substrate processing apparatus of  claim 17 , wherein the semiconductor substrate processing apparatus is configured for degassing prior to transfer of a substrate from the deposition module to the lithography exposure tool. 
     
     
         20 . The semiconductor substrate processing apparatus of  claim 17 , further comprising a means of containment to capture reactants and byproducts of metal-containing film formation.