Inventor · disambiguated record
Jon Henri
Also filed as: HENRI JON
57 granted patents·13 pending applications·6,392 citations·filing 1991–2025
99Inventor score
Files withLAM RES CORP30NOVELLUS SYSTEMS INC27LAVOIE ADRIEN2SUBRAMONIUM PRAMOD2APPLIED MATERIALS INC1
Top patents by PatentIndex Score
70 records- 0199US9786570B2Methods for depositing films on sensitive substratesNOVELLUS SYSTEMS INC·Filed 2016·Granted Oct 10, 2017·362 cites·6 claims
- 0299US9601693B1Method for encapsulating a chalcogenide materialLAM RES CORP·Filed 2015·Granted Mar 21, 2017·43 cites·19 claims
- 0399US9385318B1Method to integrate a halide-containing ALD film on sensitive materialsLAM RES CORP·Filed 2015·Granted Jul 5, 2016·50 cites·19 claims
- 0499US8647993B2Methods for UV-assisted conformal film depositionLAVOIE ADRIEN·Filed 2012·Granted Feb 11, 2014·487 cites·18 claims
- 0598US10347547B2Suppressing interfacial reactions by varying the wafer temperature throughout depositionLAM RES CORP·Filed 2016·Granted Jul 9, 2019·401 cites·20 claims
- 0698US10043655B2Plasma activated conformal dielectric film depositionNOVELLUS SYSTEMS INC·Filed 2017·Granted Aug 7, 2018·28 cites·20 claims
- 0798US10008428B2Methods for depositing films on sensitive substratesNOVELLUS SYSTEMS INC·Filed 2017·Granted Jun 26, 2018·27 cites·13 claims
- 0898US9875891B2Selective inhibition in atomic layer deposition of silicon-containing filmsLAM RES CORP·Filed 2017·Granted Jan 23, 2018·478 cites·15 claims
- 0998US9824884B1Method for depositing metals free ald silicon nitride films using halide-based precursorsLAM RES CORP·Filed 2016·Granted Nov 21, 2017·348 cites·16 claims
- 1098US9570274B2Plasma activated conformal dielectric film depositionNOVELLUS SYSTEMS INC·Filed 2015·Granted Feb 14, 2017·30 cites·11 claims
- 1198US9564312B2Selective inhibition in atomic layer deposition of silicon-containing filmsLAM RES CORP·Filed 2014·Granted Feb 7, 2017·415 cites·14 claims
- 1298US9502238B2Deposition of conformal films by atomic layer deposition and atomic layer etchLAM RES CORP·Filed 2015·Granted Nov 22, 2016·55 cites·17 claims
- 1398US9287113B2Methods for depositing films on sensitive substratesNOVELLUS SYSTEMS INC·Filed 2013·Granted Mar 15, 2016·74 cites·19 claims
- 1498US9214333B1Methods and apparatuses for uniform reduction of the in-feature wet etch rate of a silicon nitride film formed by ALDLAM RES CORP·Filed 2014·Granted Dec 15, 2015·539 cites·21 claims
- 1598US9070555B2Method for depositing a chlorine-free conformal sin filmNOVELLUS SYSTEMS INC·Filed 2013·Granted Jun 30, 2015·31 cites·19 claims
- 1698US7381644B1Pulsed PECVD method for modulating hydrogen content in hard maskNOVELLUS SYSTEMS INC·Filed 2005·Granted Jun 3, 2008·555 cites·31 claims
- 1797US9670579B2Method for depositing a chlorine-free conformal SiN filmNOVELLUS SYSTEMS INC·Filed 2015·Granted Jun 6, 2017·18 cites·20 claims
- 1897US8999859B2Plasma activated conformal dielectric film depositionNOVELLUS SYSTEMS INC·Filed 2013·Granted Apr 7, 2015·56 cites·25 claims
- 1997US8728956B2Plasma activated conformal film depositionLAVOIE ADRIEN·Filed 2011·Granted May 20, 2014·541 cites·39 claims
- 2097US8637411B2Plasma activated conformal dielectric film depositionSWAMINATHAN SHANKAR·Filed 2011·Granted Jan 28, 2014·99 cites·44 claims
- 2196US10804099B2Selective inhibition in atomic layer deposition of silicon-containing filmsLAM RES CORP·Filed 2017·Granted Oct 13, 2020·13 cites·16 claims
- 2296US10741458B2Methods for depositing films on sensitive substratesNOVELLUS SYSTEMS INC·Filed 2018·Granted Aug 11, 2020·9 cites·16 claims
- 2396US9230800B2Plasma activated conformal film depositionNOVELLUS SYSTEMS INC·Filed 2014·Granted Jan 5, 2016·41 cites·22 claims
- 2496US8592328B2Method for depositing a chlorine-free conformal sin filmHAUSMANN DENNIS·Filed 2012·Granted Nov 26, 2013·111 cites·20 claims
- 2596US8591659B1Plasma clean method for deposition chamberFANG ZHIYUAN·Filed 2009·Granted Nov 26, 2013·550 cites·16 claims
- 2696US7981810B1Methods of depositing highly selective transparent ashable hardmask filmsNOVELLUS SYSTEMS INC·Filed 2006·Granted Jul 19, 2011·54 cites·19 claims
- 2796US7981777B1Methods of depositing stable and hermetic ashable hardmask filmsNOVELLUS SYSTEMS INC·Filed 2007·Granted Jul 19, 2011·42 cites·16 claims
- 2896US7915166B1Diffusion barrier and etch stop filmsNOVELLUS SYSTEMS INC·Filed 2007·Granted Mar 29, 2011·70 cites·24 claims
- 2996US7906817B1High compressive stress carbon liners for MOS devicesNOVELLUS SYSTEMS INC·Filed 2008·Granted Mar 15, 2011·40 cites·8 claims
- 3095US9589790B2Method of depositing ammonia free and chlorine free conformal silicon nitride filmLAM RES CORP·Filed 2014·Granted Mar 7, 2017·22 cites·21 claims
- 3195US9076646B2Plasma enhanced atomic layer deposition with pulsed plasma exposureLAM RES CORP·Filed 2013·Granted Jul 7, 2015·81 cites·19 claims
- 3295US8669181B1Diffusion barrier and etch stop filmsYU YONGSIK·Filed 2011·Granted Mar 11, 2014·36 cites·16 claims
- 3395US8435608B1Methods of depositing smooth and conformal ashable hard mask filmsSUBRAMONIUM PRAMOD·Filed 2008·Granted May 7, 2013·62 cites·20 claims
- 3495US8110493B1Pulsed PECVD method for modulating hydrogen content in hard maskSUBRAMONIUM PRAMOD·Filed 2008·Granted Feb 7, 2012·49 cites·22 claims
- 3595US7704894B1Method of eliminating small bin defects in high throughput TEOS filmsNOVELLUS SYSTEMS INC·Filed 2006·Granted Apr 27, 2010·50 cites·21 claims
- 3694US6821407B1Anode and anode chamber for copper electroplatingNOVELLUS SYSTEMS INC·Filed 2002·Granted Nov 23, 2004·97 cites·25 claims
- 3794US6793796B2Electroplating process for avoiding defects in metal features of integrated circuit devicesNOVELLUS SYSTEMS INC·Filed 2001·Granted Sep 21, 2004·92 cites·22 claims
- 3893US10566194B2Selective deposition of etch-stop layer for enhanced patterningLAM RES CORP·Filed 2018·Granted Feb 18, 2020·5 cites·20 claims
- 3993US9240320B1Methods of depositing smooth and conformal ashable hard mask filmsNOVELLUS SYSTEMS INC·Filed 2013·Granted Jan 19, 2016·15 cites·20 claims
- 4092US6440291B1Controlled induction by use of power supply trigger in electrochemical processingNOVELLUS SYSTEMS INC·Filed 2000·Granted Aug 27, 2002·37 cites·19 claims
- 4191US7955990B2Method for improved thickness repeatability of PECVD deposited carbon filmsNOVELLUS SYSTEMS INC·Filed 2008·Granted Jun 7, 2011·26 cites·17 claims
- 4290US9034142B2Temperature controlled showerhead for high temperature operationsBARTLETT CHRISTOPHER M·Filed 2009·Granted May 19, 2015·35 cites·34 claims
- 4390US8100081B1Edge removal of films using externally generated plasma speciesHENRI JON·Filed 2006·Granted Jan 24, 2012·48 cites·17 claims
- 4489US10643846B2Selective growth of metal-containing hardmask thin filmsLAM RES CORP·Filed 2018·Granted May 5, 2020·5 cites·19 claims
- 4588US11107683B2Selective growth of metal-containing hardmask thin filmsLAM RES CORP·Filed 2020·Granted Aug 31, 2021·2 cites·17 claims
- 4687US11094542B2Selective deposition of etch-stop layer for enhanced patterningLAM RES CORP·Filed 2020·Granted Aug 17, 2021·2 cites·20 claims
- 4787US7923376B1Method of reducing defects in PECVD TEOS filmsNOVELLUS SYSTEMS INC·Filed 2006·Granted Apr 12, 2011·22 cites·19 claims
- 4886US5176790AProcess for forming a via in an integrated circuit structure by etching through an insulation layer while inhibiting sputtering of underlying metalAPPLIED MATERIALS INC·Filed 1991·Granted Jan 5, 1993·108 cites·49 claims
- 4984US8362571B1High compressive stress carbon liners for MOS devicesNOVELLUS SYSTEMS INC·Filed 2011·Granted Jan 29, 2013·5 cites·17 claims
- 5082US8962101B2Methods and apparatus for plasma-based depositionNOVELLUS SYSTEMS INC·Filed 2013·Granted Feb 24, 2015·7 cites·19 claims
Showing the top 50 of 70 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Jon Henri files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →