Inventor · disambiguated record
Juergen Steinbrenner
Also filed as: STEINBRENNER JUERGEN
26 granted patents·10 pending applications·10 citations·filing 2012–2023
92Inventor score
Files withINFINEON TECHNOLOGIES AG24INFINEON TECHNOLOGIES AUSTRIA AG11INFINEON TECHNOLOGIES AUSTRIA1
Top patents by PatentIndex Score
36 records- 0178US10629416B2Wafer chuck and processing arrangementINFINEON TECHNOLOGIES AG·Filed 2017·Granted Apr 21, 2020·3 cites·19 claims
- 0275US9455136B2Controlling the reflow behaviour of BPSG films and devices made thereofINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Sep 27, 2016·2 cites·24 claims
- 0368US11804415B2Semiconductor device with first and second portions that include silicon and nitrogenINFINEON TECHNOLOGIES AG·Filed 2021·Granted Oct 31, 2023·0 cites·20 claims
- 0464US11352253B2Semiconductor device, microphone and methods for forming a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2020·Granted Jun 7, 2022·0 cites·20 claims
- 0564US11211303B2Semiconductor device including a passivation structure and manufacturing methodINFINEON TECHNOLOGIES AG·Filed 2019·Granted Dec 28, 2021·1 cites·25 claims
- 0664US9941111B2Method for processing a semiconductor layer, method for processing a silicon substrate, and method for processing a silicon layerINFINEON TECHNOLOGIES AG·Filed 2015·Granted Apr 10, 2018·1 cites·12 claims
- 0764US9379196B2Method of forming a trench using epitaxial lateral overgrowth and deep vertical trench structureINFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Granted Jun 28, 2016·1 cites·10 claims
- 0861US9728480B2Passivation layer and method of making a passivation layerINFINEON TECHNOLOGIES AG·Filed 2015·Granted Aug 8, 2017·1 cites·18 claims
- 0960US11075134B2Semiconductor device with a portion including silicon and nitrogen and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jul 27, 2021·0 cites·24 claims
- 1060US10777506B2Silicon carbide semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2019·Granted Sep 15, 2020·0 cites·13 claims
- 1160US9773736B2Intermediate layer for copper structuring and methods of formation thereofINFINEON TECHNOLOGIES AG·Filed 2015·Granted Sep 26, 2017·1 cites·21 claims
- 1259US10910309B2Nanotube structure based metal damascene processINFINEON TECHNOLOGIES AG·Filed 2017·Granted Feb 2, 2021·0 cites·19 claims
- 1358US2022285149A1Power semiconductor device having a structured metallization layerINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Application pending·0 cites
- 1457US11387095B2Passivation structuring and plating for semiconductor devicesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Jul 12, 2022·0 cites·19 claims
- 1557US10325803B2Semiconductor wafer and method for processing a semiconductor waferINFINEON TECHNOLOGIES AG·Filed 2018·Granted Jun 18, 2019·0 cites·13 claims
- 1657US9159669B2Nanotube structure based metal damascene processINFINEON TECHNOLOGIES AG·Filed 2014·Granted Oct 13, 2015·0 cites·7 claims
- 1755US9984915B2Semiconductor wafer and method for processing a semiconductor waferINFINEON TECHNOLOGIES AG·Filed 2014·Granted May 29, 2018·0 cites·9 claims
- 1855US9704800B2Nanotube structure based metal damascene processINFINEON TECHNOLOGIES AG·Filed 2015·Granted Jul 11, 2017·0 cites·12 claims
- 1954US11387081B2Wafer chuck and processing arrangementINFINEON TECHNOLOGIES AG·Filed 2020·Granted Jul 12, 2022·0 cites·9 claims
- 2054US10043750B2Nanotube structure based metal damascene processINFINEON TECHNOLOGIES AG·Filed 2015·Granted Aug 7, 2018·0 cites·12 claims
- 2153US2018247820A1Controlling the Reflow Behaviour of BPSG Films and Devices Made ThereofINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Application pending·0 cites
- 2252US10475743B2Semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2017·Granted Nov 12, 2019·0 cites·25 claims
- 2352US2023317542A1Semiconductor device comprising contact pad structureINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
- 2451US2024194779A1Semiconductor device and method of producing thereofINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2023·Application pending·0 cites
- 2550US10858246B2Semiconductor device, microphone and methods for forming a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2018·Granted Dec 8, 2020·0 cites·17 claims
- 2649US10049879B2Self aligned silicon carbide contact formation using protective layerINFINEON TECHNOLOGIES AG·Filed 2017·Granted Aug 14, 2018·0 cites·20 claims
- 2749US9768273B2Method of forming a trench using epitaxial lateral overgrowthINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Sep 19, 2017·0 cites·20 claims
- 2849US2017011927A1Controlling the Reflow Behaviour of BPSG Films and Devices Made ThereofINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Application pending·0 cites
- 2948US9666482B1Self aligned silicon carbide contact formation using protective layerINFINEON TECHNOLOGIES AG·Filed 2016·Granted May 30, 2017·0 cites·20 claims
- 3045US2014117511A1Passivation Layer and Method of Making a Passivation LayerINFINEON TECHNOLOGIES AG·Filed 2012·Application pending·0 cites
- 3142US10347491B2Forming recombination centers in a semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Jul 9, 2019·0 cites·20 claims
- 3242US2020111896A1Transistor Device and Method for Forming a Recess for a Trench Gate ElectrodeINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Application pending·0 cites
- 3340US2019333765A1Semiconductor Device and ManufacturingINFINEON TECHNOLOGIES AG·Filed 2019·Application pending·0 cites
- 3439US9478409B2Method for coating a workpieceINFINEON TECHNOLOGIES AG·Filed 2015·Granted Oct 25, 2016·0 cites·14 claims
- 3533US2017110331A1Methods for Forming Semiconductor DevicesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Application pending·0 cites
- 3633US2017005091A1Semiconductor Devices and Method for Forming Semiconductor DevicesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Juergen Steinbrenner files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →