Inventor · disambiguated record
Junli Wang
Also filed as: WANG JUNLI · WANG SR JUNLI
445 granted patents·96 pending applications·2,048 citations·filing 1997–2024
99Inventor score
Top patents by PatentIndex Score
541 records- 0199US11665877B1Stacked FET SRAM designIBM·Filed 2021·Granted May 30, 2023·5 cites·18 claims
- 0299US11164792B2Complementary field-effect transistorsIBM·Filed 2020·Granted Nov 2, 2021·8 cites·20 claims
- 0399US10103065B1Gate metal patterning for tight pitch applicationsIBM·Filed 2017·Granted Oct 16, 2018·50 cites·12 claims
- 0499US9954058B1Self-aligned air gap spacer for nanosheet CMOS devicesIBM·Filed 2017·Granted Apr 24, 2018·79 cites·11 claims
- 0599US9666533B1Airgap formation between source/drain contacts and gatesIBM·Filed 2016·Granted May 30, 2017·54 cites·20 claims
- 0699US9490335B1Extra gate device for nanosheetIBM·Filed 2015·Granted Nov 8, 2016·45 cites·8 claims
- 0798US11984401B2Stacked FET integration with BSPDNIBM·Filed 2021·Granted May 14, 2024·5 cites·8 claims
- 0898US11521927B2Buried power rail for scaled vertical transport field effect transistorIBM·Filed 2020·Granted Dec 6, 2022·4 cites·20 claims
- 0998US10566246B1Shared contact trench comprising dual silicide layers and dual epitaxial layers for source/drain layers of NFET and PFET devicesIBM·Filed 2018·Granted Feb 18, 2020·41 cites·16 claims
- 1098US10516064B1Multiple width nanosheet devicesIBM·Filed 2018·Granted Dec 24, 2019·21 cites·20 claims
- 1198US10020254B1Integration of super via structure in BEOLIBM·Filed 2017·Granted Jul 10, 2018·39 cites·8 claims
- 1298US10020255B1Integration of super via structure in BEOLIBM·Filed 2017·Granted Jul 10, 2018·36 cites·12 claims
- 1398US9871116B2Replacement metal gate structuresIBM·Filed 2017·Granted Jan 16, 2018·18 cites·19 claims
- 1498US9842931B1Self-aligned shallow trench isolation and doping for vertical fin transistorsIBM·Filed 2016·Granted Dec 12, 2017·33 cites·15 claims
- 1598US9805935B2Bottom source/drain silicidation for vertical field-effect transistor (FET)IBM·Filed 2015·Granted Oct 31, 2017·27 cites·18 claims
- 1698US9799765B1Formation of a bottom source-drain for vertical field-effect transistorsIBM·Filed 2016·Granted Oct 24, 2017·28 cites·14 claims
- 1798US9768118B1Contact having self-aligned air gap spacersIBM·Filed 2016·Granted Sep 19, 2017·29 cites·10 claims
- 1898US9748380B1Vertical transistor including a bottom source/drain region, a gate structure, and an air gap formed between the bottom source/drain region and the gate structureIBM·Filed 2016·Granted Aug 29, 2017·32 cites·11 claims
- 1998US9741792B2Bulk nanosheet with dielectric isolationIBM·Filed 2015·Granted Aug 22, 2017·24 cites·17 claims
- 2098US9735246B1Air-gap top spacer and self-aligned metal gate for vertical fetsIBM·Filed 2016·Granted Aug 15, 2017·39 cites·12 claims
- 2198US9691877B2Replacement metal gate structuresIBM·Filed 2016·Granted Jun 27, 2017·17 cites·12 claims
- 2298US9685532B2Replacement metal gate structuresIBM·Filed 2015·Granted Jun 20, 2017·19 cites·17 claims
- 2398US9653575B1Vertical transistor with a body contact for back-biasingIBM·Filed 2016·Granted May 16, 2017·32 cites·19 claims
- 2498US9576980B1FinFET devices having gate dielectric structures with different thicknesses on same semiconductor structureIBM·Filed 2015·Granted Feb 21, 2017·27 cites·20 claims
- 2598US9570555B1Source and drain epitaxial semiconductor material integration for high voltage semiconductor devicesIBM·Filed 2015·Granted Feb 14, 2017·22 cites·15 claims
- 2698US9559014B1Self-aligned punch through stopper liner for bulk FinFETIBM·Filed 2015·Granted Jan 31, 2017·20 cites·6 claims
- 2798US9520392B1Semiconductor device including finFET and fin varactorIBM·Filed 2015·Granted Dec 13, 2016·24 cites·12 claims
- 2898US9508825B1Method and structure for forming gate contact above active area with trench silicideIBM·Filed 2015·Granted Nov 29, 2016·53 cites·14 claims
- 2998US8546209B1Replacement metal gate processing with reduced interlevel dielectric layer etch rateCHENG KANGGUO·Filed 2012·Granted Oct 1, 2013·35 cites·20 claims
- 3098US8492228B1Field effect transistor devices having thick gate dielectric layers and thin gate dielectric layersLEOBANDUNG EFFENDI·Filed 2012·Granted Jul 23, 2013·80 cites·20 claims
- 3197US11615988B2FinFET devicesTESSERA LLC·Filed 2021·Granted Mar 28, 2023·2 cites·20 claims
- 3297US11348999B2Nanosheet semiconductor devices with sigma shaped inner spacerIBM·Filed 2020·Granted May 31, 2022·4 cites·17 claims
- 3397US11152257B2Barrier-less prefilled via formationIBM·Filed 2020·Granted Oct 19, 2021·5 cites·18 claims
- 3497US10797163B1Leakage control for gate-all-around field-effect transistor devicesIBM·Filed 2019·Granted Oct 6, 2020·26 cites·19 claims
- 3597US10431495B1Semiconductor device with local connectionIBM·Filed 2018·Granted Oct 1, 2019·18 cites·20 claims
- 3697US10283406B2Fabrication of self-aligned gate contacts and source/drain contacts directly above gate electrodes and source/drainsIBM·Filed 2017·Granted May 7, 2019·12 cites·13 claims
- 3797US10243043B2Self-aligned air gap spacer for nanosheet CMOS devicesIBM·Filed 2017·Granted Mar 26, 2019·16 cites·9 claims
- 3897US10236359B2Replacement metal gate structuresIBM·Filed 2018·Granted Mar 19, 2019·8 cites·12 claims
- 3997US10177256B2Replacement metal gate structuresIBM·Filed 2017·Granted Jan 8, 2019·9 cites·9 claims
- 4097US10056489B2Replacement metal gate structuresIBM·Filed 2017·Granted Aug 21, 2018·8 cites·10 claims
- 4197US9911738B1Vertical-transport field-effect transistors with a damascene gate strapGLOBALFOUNDRIES INC·Filed 2017·Granted Mar 6, 2018·18 cites·20 claims
- 4297US9865739B2Replacement metal gate structuresIBM·Filed 2017·Granted Jan 9, 2018·12 cites·13 claims
- 4397US9853127B1Silicidation of bottom source/drain sheet using pinch-off sacrificial spacer processIBM·Filed 2016·Granted Dec 26, 2017·18 cites·5 claims
- 4497US9812567B1Precise control of vertical transistor gate lengthIBM·Filed 2016·Granted Nov 7, 2017·15 cites·14 claims
- 4597US9704990B1Vertical FET with strained channelIBM·Filed 2016·Granted Jul 11, 2017·18 cites·10 claims
- 4697US9685507B2FinFET devicesIBM·Filed 2015·Granted Jun 20, 2017·15 cites·6 claims
- 4797US9685539B1Nanowire isolation scheme to reduce parasitic capacitanceIBM·Filed 2016·Granted Jun 20, 2017·17 cites·15 claims
- 4897US9613869B2FinFET devicesIBM·Filed 2016·Granted Apr 4, 2017·13 cites·15 claims
- 4997US9570571B1Gate stack integrated metal resistorsIBM·Filed 2015·Granted Feb 14, 2017·16 cites·18 claims
- 5097US9276013B1Integrated formation of Si and SiGe finsIBM·Filed 2015·Granted Mar 1, 2016·21 cites·20 claims
Showing the top 50 of 541 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →