Inventor · disambiguated record
Qian Fu
Also filed as: FU QIAN · FU QIAN-JIE
62 granted patents·17 pending applications·365 citations·filing 2005–2024
98Inventor score
Top patents by PatentIndex Score
79 records- 0198US9761459B2Systems and methods for reverse pulsingLAM RES CORP·Filed 2015·Granted Sep 12, 2017·93 cites·17 claims
- 0298US9583357B1Systems and methods for reverse pulsingLAM RES CORP·Filed 2016·Granted Feb 28, 2017·98 cites·18 claims
- 0395US12334354B2Sidewall passivation for plasma etchingAPPLIED MATERIALS INC·Filed 2022·Granted Jun 17, 2025·2 cites·19 claims
- 0495US9991128B2Atomic layer etching in continuous plasmaLAM RES CORP·Filed 2017·Granted Jun 5, 2018·26 cites·19 claims
- 0593US10446394B2Spacer profile control using atomic layer deposition in a multiple patterning processLAM RES CORP·Filed 2018·Granted Oct 15, 2019·8 cites·22 claims
- 0692US8609546B2Pulsed bias plasma process to control microloadingLEE WONCHUL·Filed 2008·Granted Dec 17, 2013·24 cites·21 claims
- 0791US8329051B2Method for forming stair-step structuresFU QIAN·Filed 2010·Granted Dec 11, 2012·17 cites·17 claims
- 0890US9741563B2Hybrid stair-step etchLAM RES CORP·Filed 2016·Granted Aug 22, 2017·10 cites·18 claims
- 0988US9824896B2Methods and systems for advanced ion control for etching processesLAM RES CORP·Filed 2015·Granted Nov 21, 2017·4 cites·23 claims
- 1088US9275872B2Method for forming stair-step structuresLAM RES CORP·Filed 2014·Granted Mar 1, 2016·6 cites·17 claims
- 1186US10658194B2Silicon-based deposition for semiconductor processingLAM RES CORP·Filed 2016·Granted May 19, 2020·2 cites·13 claims
- 1285US12437966B2Systems and methods for reverse pulsingLAM RES CORP·Filed 2023·Granted Oct 7, 2025·0 cites·7 claims
- 1383US9466502B2Line width roughness improvement with noble gas plasmaLAM RES CORP·Filed 2016·Granted Oct 11, 2016·3 cites·13 claims
- 1482US10943789B2Methods and systems for advanced ion control for etching processesLAM RES CORP·Filed 2017·Granted Mar 9, 2021·2 cites·16 claims
- 1582US9941123B1Post etch treatment to prevent pattern collapseLAM RES CORP·Filed 2017·Granted Apr 10, 2018·3 cites·18 claims
- 1682US8901004B2Plasma etch method to reduce micro-loadingKAMP TOM·Filed 2010·Granted Dec 2, 2014·11 cites·18 claims
- 1782US7629255B2Method for reducing microloading in etching high aspect ratio structuresLAM RES CORP·Filed 2007·Granted Dec 8, 2009·8 cites·10 claims
- 1881US9646844B2Method for forming stair-step structuresLAM RES CORP·Filed 2016·Granted May 9, 2017·2 cites·11 claims
- 1979US7976641B1Extending storage time of removed plasma chamber components prior to cleaning thereofLAM RES CORP·Filed 2005·Granted Jul 12, 2011·3 cites·20 claims
- 2078US12469715B2Dry etching with etch byproduct self-cleaningAPPLIED MATERIALS INC·Filed 2023·Granted Nov 11, 2025·0 cites·12 claims
- 2178US9633867B2Method and apparatus for anisotropic tungsten etchingLAM RES CORP·Filed 2015·Granted Apr 25, 2017·3 cites·19 claims
- 2278US9263284B2Line width roughness improvement with noble gas plasmaLAM RES CORP·Filed 2014·Granted Feb 16, 2016·3 cites·15 claims
- 2378US9129902B2Continuous plasma ETCH processLAM RES CORP·Filed 2013·Granted Sep 8, 2015·3 cites·18 claims
- 2478US8535549B2Method for forming stair-step structuresFU QIAN·Filed 2011·Granted Sep 17, 2013·5 cites·17 claims
- 2577US8518282B2Method of controlling etch microloading for a tungsten-containing layerLEE WONCHUL·Filed 2008·Granted Aug 27, 2013·5 cites·20 claims
- 2676US9767991B2Methods and systems for independent control of radical density, ion density, and ion energy in pulsed plasma semiconductor device fabricationLAM RES CORP·Filed 2015·Granted Sep 19, 2017·2 cites·18 claims
- 2776US8440573B2Method and apparatus for pattern collapse free wet processing of semiconductor devicesMIKHAYLICHENKO KATRINA·Filed 2010·Granted May 14, 2013·4 cites·20 claims
- 2875US10354888B2Method and apparatus for anisotropic tungsten etchingLAM RES CORP·Filed 2017·Granted Jul 16, 2019·2 cites·13 claims
- 2975US10242845B2Near-substrate supplemental plasma density generation with low bias voltage within inductively coupled plasma processing chamberLAM RES CORP·Filed 2017·Granted Mar 26, 2019·2 cites·15 claims
- 3074US8753804B2Line width roughness improvement with noble gas plasmaCHENG SHIH-YUAN·Filed 2009·Granted Jun 17, 2014·5 cites·12 claims
- 3173US12165872B2Methods and systems for advanced ion control for etching processesLAM RES CORP·Filed 2021·Granted Dec 10, 2024·0 cites·20 claims
- 3272US7682979B2Phase change alloy etchLAM RES CORP·Filed 2006·Granted Mar 23, 2010·3 cites·13 claims
- 3370US2024420948A1Selective carbon deposition on top and bottom surfaces of semiconductor substratesAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 3466US12315733B2Enhanced etch selectivity using halidesAPPLIED MATERIALS INC·Filed 2024·Granted May 27, 2025·0 cites·20 claims
- 3566US9852924B1Line edge roughness improvement with sidewall sputteringLAM RES CORP·Filed 2016·Granted Dec 26, 2017·1 cites·18 claims
- 3664US9059116B2Etch with pulsed biasJAIN AMIT·Filed 2011·Granted Jun 16, 2015·1 cites·15 claims
- 3763US12125699B2Selective carbon deposition on top and bottom surfaces of semiconductor substratesAPPLIED MATERIALS INC·Filed 2021·Granted Oct 22, 2024·0 cites·15 claims
- 3863US8802571B2Method of hard mask CD control by Ar sputteringLEE WONCHUL·Filed 2011·Granted Aug 12, 2014·1 cites·19 claims
- 3962US12009218B2Pulsed etch processAPPLIED MATERIALS INC·Filed 2022·Granted Jun 11, 2024·0 cites·16 claims
- 4062US8216388B2Extending storage time of removed plasma chamber components prior to cleaning thereofSHIH HONG·Filed 2011·Granted Jul 10, 2012·0 cites·20 claims
- 4161US12463053B2Method for etching high aspect ratio structuresAPPLIED MATERIALS INC·Filed 2023·Granted Nov 4, 2025·0 cites·17 claims
- 4261US2025323058A1Method for etching rutheniumAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 4360US12148475B2Selection gate separation for 3D NANDAPPLIED MATERIALS INC·Filed 2022·Granted Nov 19, 2024·0 cites·20 claims
- 4460US11798785B2Systems for reverse pulsingLAM RES CORP·Filed 2017·Granted Oct 24, 2023·0 cites·17 claims
- 4560US8124538B2Selective etch of high-k dielectric materialBAE IN DEOG·Filed 2009·Granted Feb 28, 2012·2 cites·15 claims
- 4660US2025357132A1Etching silicon-containing material and silicon-and-germanium-containing materialAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 4759US11049726B2Methods and systems for advanced ion control for etching processesLAM RES CORP·Filed 2017·Granted Jun 29, 2021·0 cites·23 claims
- 4859US8431461B1Silicon nitride dry trim without top pulldownZHONG QINGHUA·Filed 2011·Granted Apr 30, 2013·1 cites·19 claims
- 4958US2025069895A1Methods of etching silicon-and-oxygen-containing features at low temperaturesAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 5058US2025246435A1Cryogenic etching of silicon-containing materialsAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
Showing the top 50 of 79 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →