Inventor · disambiguated record
Ryu Nakano
Also filed as: NAKANO RYU
30 granted patents·8 pending applications·7,061 citations·filing 2004–2025
98Inventor score
Top patents by PatentIndex Score
38 records- 0199US9464352B2Low-oxidation plasma-assisted processASM IP HOLDING BV·Filed 2014·Granted Oct 11, 2016·463 cites·14 claims
- 0299US9368352B2Methods for forming doped silicon oxide thin filmsASM INT·Filed 2014·Granted Jun 14, 2016·469 cites·19 claims
- 0399US9153441B2Methods for forming doped silicon oxide thin filmsASM INT·Filed 2014·Granted Oct 6, 2015·473 cites·17 claims
- 0499US8679958B2Methods for forming doped silicon oxide thin filmsASM INT·Filed 2012·Granted Mar 25, 2014·484 cites·26 claims
- 0598US10147600B2Methods for forming doped silicon oxide thin filmsASM INT NV·Filed 2018·Granted Dec 4, 2018·417 cites·20 claims
- 0698US9875893B2Methods for forming doped silicon oxide thin filmsASM INT NV·Filed 2017·Granted Jan 23, 2018·419 cites·20 claims
- 0798US9663857B2Method for stabilizing reaction chamber pressureASM IP HOLDING BV·Filed 2014·Granted May 30, 2017·466 cites·6 claims
- 0898US9564314B2Methods for forming doped silicon oxide thin filmsASM INT NV·Filed 2015·Granted Feb 7, 2017·465 cites·28 claims
- 0998US9284642B2Method for forming oxide film by plasma-assisted processingASM IP HOLDING BV·Filed 2013·Granted Mar 15, 2016·475 cites·7 claims
- 1098US9123510B2Method for controlling in-plane uniformity of substrate processed by plasma-assisted processASM IP HOLDING BV·Filed 2013·Granted Sep 1, 2015·520 cites·10 claims
- 1198US8298951B1Footing reduction using etch-selective layerNAKANO RYU·Filed 2011·Granted Oct 30, 2012·518 cites·11 claims
- 1297US7712435B2Plasma processing apparatus with insulated gas inlet poreASM JAPAN·Filed 2005·Granted May 11, 2010·426 cites·25 claims
- 1396US10043661B2Method for protecting layer by forming hydrocarbon-based extremely thin filmASM IP HOLDING BV·Filed 2016·Granted Aug 7, 2018·463 cites·13 claims
- 1496US9343308B2Method for trimming carbon-containing film at reduced trimming rateASM IP HOLDING BV·Filed 2013·Granted May 17, 2016·463 cites·19 claims
- 1595US8742668B2Method for stabilizing plasma ignitionNAKANO RYU·Filed 2012·Granted Jun 3, 2014·517 cites·14 claims
- 1692US10510530B2Methods for forming doped silicon oxide thin filmsASM INT NV·Filed 2018·Granted Dec 17, 2019·3 cites·18 claims
- 1789US10784105B2Methods for forming doped silicon oxide thin filmsASM INT NV·Filed 2019·Granted Sep 22, 2020·2 cites·20 claims
- 1888US11482418B2Substrate processing method and apparatusASM IP HOLDING BV·Filed 2018·Granted Oct 25, 2022·4 cites·13 claims
- 1987US11302527B2Methods for forming doped silicon oxide thin filmsASM INT NV·Filed 2020·Granted Apr 12, 2022·1 cites·20 claims
- 2085US11830738B2Method for forming barrier layer and method for manufacturing semiconductor deviceASM IP HOLDING BV·Filed 2021·Granted Nov 28, 2023·1 cites·19 claims
- 2184US11970769B2Cyclical deposition methodsASM IP HOLDING BV·Filed 2022·Granted Apr 30, 2024·1 cites·19 claims
- 2282US2025389023A1Reactor system comprising a tuning circuitASM IP HOLDING BV·Filed 2025·Application pending·0 cites
- 2381US11527400B2Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silaneASM IP HOLDING BV·Filed 2020·Granted Dec 13, 2022·1 cites·14 claims
- 2481US2023031720A1Methods for forming doped silicon oxide thin filmsASM INT NV·Filed 2022·Application pending·0 cites
- 2580US7972961B2Purge step-controlled sequence of processing semiconductor wafersASM JAPAN·Filed 2008·Granted Jul 5, 2011·5 cites·8 claims
- 2672US12033849B2Method for depositing silicon oxide film having improved quality by PEALD using bis(diethylamino)silaneASM IP HOLDING BV·Filed 2022·Granted Jul 9, 2024·0 cites·15 claims
- 2769US9673092B2Film forming apparatus, and method of manufacturing semiconductor deviceASM IP HOLDING BV·Filed 2014·Granted Jun 6, 2017·2 cites·6 claims
- 2869US2023040728A1Substrate processing method and apparatusASM IP HOLDING BV·Filed 2022·Application pending·0 cites
- 2963US12442082B2Reactor system comprising a tuning circuitASM IP HOLDING BV·Filed 2021·Granted Oct 14, 2025·0 cites·19 claims
- 3062US2024429044A1Substrate processing methodASM IP HOLDING BV·Filed 2024·Application pending·0 cites
- 3158US2024145236A1Substrate processing methodASM IP HOLDING BV·Filed 2023·Application pending·0 cites
- 3257US12394626B2Method of forming a structure and system for sameASM IP HOLDING BV·Filed 2022·Granted Aug 19, 2025·0 cites·20 claims
- 3356US2009155488A1Shower plate electrode for plasma cvd reactorASM JAPAN·Filed 2007·Application pending·0 cites
- 3453US12074022B2Method and system for forming patterned structures using multiple patterning processASM IP HOLDING BV·Filed 2021·Granted Aug 27, 2024·0 cites·25 claims
- 3552US2023395372A1Method and system for forming patterned structures using multiple patterning processASM IP HOLDING BV·Filed 2023·Application pending·0 cites
- 3651US2007266945A1Plasma cvd apparatus equipped with plasma blocking insulation plateASM JAPAN·Filed 2007·Application pending·0 cites
- 3750US7037855B2Method of forming fluorine-doped low-dielectric-constant insulating filmASM JAPAN·Filed 2004·Granted May 2, 2006·3 cites·24 claims
- 3843US7829159B2Method of forming organosilicon oxide film and multilayer resist structureASM JAPAN·Filed 2006·Granted Nov 9, 2010·0 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →