Inventor · disambiguated record
Shenjian Liu
Also filed as: LIU SHENJIAN
18 granted patents·3 pending applications·102 citations·filing 2002–2020
93Inventor score
Files withLAM RES CORP9SHIH HONG3ADVANCED MICRO FABRICATION EQUIPMENT INC CHINA2LEE WONCHUL2ADVANCED MICRO FABRICATION EQUIPMENT INC SHANGHAI1
Top patents by PatentIndex Score
21 records- 0192US8609546B2Pulsed bias plasma process to control microloadingLEE WONCHUL·Filed 2008·Granted Dec 17, 2013·24 cites·21 claims
- 0283US9466502B2Line width roughness improvement with noble gas plasmaLAM RES CORP·Filed 2016·Granted Oct 11, 2016·3 cites·13 claims
- 0382US8901004B2Plasma etch method to reduce micro-loadingKAMP TOM·Filed 2010·Granted Dec 2, 2014·11 cites·18 claims
- 0482US7629255B2Method for reducing microloading in etching high aspect ratio structuresLAM RES CORP·Filed 2007·Granted Dec 8, 2009·8 cites·10 claims
- 0581US8097105B2Extending lifetime of yttrium oxide as a plasma chamber materialSHIH HONG·Filed 2007·Granted Jan 17, 2012·5 cites·11 claims
- 0678US9263284B2Line width roughness improvement with noble gas plasmaLAM RES CORP·Filed 2014·Granted Feb 16, 2016·3 cites·15 claims
- 0777US8518282B2Method of controlling etch microloading for a tungsten-containing layerLEE WONCHUL·Filed 2008·Granted Aug 27, 2013·5 cites·20 claims
- 0877US7413992B2Tungsten silicide etch process with reduced etch rate micro-loadingLAM RES CORP·Filed 2006·Granted Aug 19, 2008·10 cites·16 claims
- 0976US12062524B2Plasma reactor having a variable coupling of low frequency RF power to an annular electrodeADVANCED MICRO FABRICATION EQUIPMENT INC SHANGHAI·Filed 2018·Granted Aug 13, 2024·2 cites·10 claims
- 1076US8440573B2Method and apparatus for pattern collapse free wet processing of semiconductor devicesMIKHAYLICHENKO KATRINA·Filed 2010·Granted May 14, 2013·4 cites·20 claims
- 1174US8753804B2Line width roughness improvement with noble gas plasmaCHENG SHIH-YUAN·Filed 2009·Granted Jun 17, 2014·5 cites·12 claims
- 1273US8585844B2Extending lifetime of yttrium oxide as a plasma chamber materialSHIH HONG·Filed 2011·Granted Nov 19, 2013·2 cites·12 claims
- 1372US7682979B2Phase change alloy etchLAM RES CORP·Filed 2006·Granted Mar 23, 2010·3 cites·13 claims
- 1468US6774045B1Residual halogen reduction with microwave stripperLAM RES CORP·Filed 2002·Granted Aug 10, 2004·12 cites·18 claims
- 1560US8124538B2Selective etch of high-k dielectric materialBAE IN DEOG·Filed 2009·Granted Feb 28, 2012·2 cites·15 claims
- 1653US11371141B2Plasma process apparatus with low particle contamination and method of operating the sameADVANCED MICRO FABRICATION EQUIPMENT INC CHINA·Filed 2018·Granted Jun 28, 2022·0 cites·11 claims
- 1747US7208420B1Method for selectively etching an aluminum containing layerLAM RES CORP·Filed 2004·Granted Apr 24, 2007·3 cites·20 claims
- 1846US2011146909A1Methods for wet cleaning quartz surfaces of components for plasma processing chambersLAM RES CORP·Filed 2011·Application pending·0 cites
- 1942US2005274396A1Methods for wet cleaning quartz surfaces of components for plasma processing chambersSHIH HONG·Filed 2004·Application pending·0 cites
- 2041US11348763B2Corrosion-resistant structure for a gas delivery system in a plasma processing apparatusADVANCED MICRO FABRICATION EQUIPMENT INC CHINA·Filed 2020·Granted May 31, 2022·0 cites·9 claims
- 2138US2007056925A1Selective etch of films with high dielectric constant with H2 additionLAM RES CORP·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →