Substrate processing apparatus and substrate processing method

Abstract

According to one embodiment, a substrate processing apparatus ( 1 ) includes: a support ( 4 ) configured to support a substrate (W) in a plane; a rotation mechanism ( 5 ) configured to rotate the support ( 4 ) about an axis that crosses a surface of the substrate (W) supported by the support ( 4 ) as a rotation axis; a plurality of nozzles ( 6 a, 6 b, 6 c ), which are aligned from the center toward the periphery of the substrate (W) supported by the support ( 4 ), configured to eject a treatment liquid to the surface of the substrate (W) on the support ( 4 ) being rotated by the rotation mechanism ( 5 ), and a controller ( 9 ) configured to control the nozzles to eject the treatment liquid at different ejection timings according to the thickness of a film of the treatment liquid formed on the surface of the substrate (W) on the support ( 4 ) being rotated by the rotation mechanism ( 5 ).

The invention claimed is: 
     
       1. A substrate processing apparatus comprising:
 a support configured to support a substrate in a plane; 
 a rotation mechanism configured to rotate the support about an axis that crosses a surface of the substrate supported by the support as a rotation axis; 
 a plurality of nozzles, which are aligned from center toward periphery of the substrate supported by the support, configured to eject a treatment liquid to the surface of the substrate on the support being rotated by the rotation mechanism; and 
 a controller configured to control the nozzles to eject the treatment liquid at different ejection timings, wherein 
 the nozzles includes a first nozzle and a second nozzle that is adjacent to the first nozzle and located to the periphery side of the substrate compared to the first nozzle, 
 the controller is further configured to:
 control the second nozzle to start ejecting the treatment liquid after time t 4  from when the first nozzle has stopped ejecting the treatment liquid, and 
 control the first nozzle to restart ejecting the treatment liquid after time t 5  from when the second nozzle has stopped ejecting the treatment liquid, 
 
 wherein 0≤t 5 ≤t 4 . 
 
     
     
       2. The substrate processing apparatus according to  claim 1 , further comprising a film thickness measuring unit configured to measure a thickness of a liquid film on the surface of the substrate. 
     
     
       3. The substrate processing apparatus according to  claim 1 , wherein the nozzles eject the treatment liquid, temperature of which varies with respect to each of the nozzles. 
     
     
       4. The substrate processing apparatus according to  claim 1 , wherein the nozzles eject the treatment liquid, concentration of which is increased in order from the center toward the periphery of the substrate or from the periphery toward the center of the substrate. 
     
     
       5. The substrate processing apparatus according to  claim 1 , wherein, when the second nozzle starts ejecting the treatment liquid after time t 4  from when the first nozzle has stopped ejecting the treatment liquid, film thickness of the treatment liquid below the second nozzle is 500 μm or less. 
     
     
       6. The substrate processing apparatus according to  claim 1 , wherein
 three nozzles are aligned from the center toward the periphery of the substrate, and 
 an ejection opening of a nozzle located between a nozzle on an innermost peripheral side and a nozzle on an outermost peripheral side is offset from an imaginary straight line passing through an ejection opening of the nozzle on the innermost peripheral side and an ejection opening of the nozzle on the outermost peripheral side.