Semiconductor packages having improved thermal discharge and electromagnetic shielding characteristics

Abstract

A semiconductor package may include a first semiconductor chip on and electrically connected to a wiring substrate, an intermediate layer on the first semiconductor chip and covering an entire surface of the first semiconductor chip, a second semiconductor chip on the intermediate layer and electrically connected to the wiring substrate, a mold layer on the wiring substrate and covering the first semiconductor chip and the second semiconductor chip, the mold layer including one or more inner surfaces defining a mold via hole that exposes a portion of a surface of the intermediate layer, an electromagnetic shielding layer on the one or more inner surfaces of the mold layer and further on one or more outer surfaces of the mold layer, and a thermal discharge layer on the electromagnetic shielding layer in the mold via hole, such that the thermal discharge layer fills the mold via hole.

What is claimed is: 
     
       1. A semiconductor package, comprising:
 a wiring substrate; 
 an interposer chip disposed on the wiring substrate; 
 a first memory chip disposed on the interposer chip, wherein the first memory chip is electrically connected to the wiring substrate; 
 a mold layer formed on the wiring substrate, wherein the mold layer covers the first memory chip, and wherein the mold layer comprises a mold via hole or a mold trench; 
 an electromagnetic shielding layer formed on surfaces of the mold layer and a surface of a portion of the interposer chip; and 
 a thermal discharge layer disposed on the electromagnetic shielding layer within the mold via hole or the mold trench, 
 wherein the first memory chip includes a multilayer chip that includes a plurality of sub-chips which are stacked on the interposer chip, 
 wherein the plurality of sub-chips are electrically connected to each other through one or more through-vias, and 
 wherein the electromagnetic shielding layer is directly in contact with the portion of the interposer chip at a bottom of the mold via hole or the mold trench. 
 
     
     
       2. The semiconductor package of  claim 1 , wherein
 the mold layer includes the mold via hole, and the mold via hole and the thermal discharge layer correspond to a heat source in the semiconductor package, such that the semiconductor package is configured to discharge heat generated in the heat source to an outside of the semiconductor package via at least the mold via hole and the thermal discharge layer, or 
 the mold layer includes the mold trench, and the mold trench and the thermal discharge layer correspond to a heat source in the semiconductor package, such that the semiconductor package is configured to discharge heat generated in the heat source to an outside of the semiconductor package via at least the mold trench and the thermal discharge layer. 
 
     
     
       3. The semiconductor package of  claim 1 , wherein
 the first memory chip is electrically connected to the wiring substrate via a bonding wire. 
 
     
     
       4. The semiconductor package of  claim 1 , wherein the interposer chip includes a heat spreader. 
     
     
       5. The semiconductor package of  claim 1 , wherein the interposer chip includes an inner wiring layer on the surface and in the inside of an interposer substrate without an active element. 
     
     
       6. The semiconductor package of  claim 1 , wherein the mold via hole or the mold trench is at least partially defined by a recess portion recessed from the surface of the interposer chip into an interior of the interposer chip. 
     
     
       7. The semiconductor package of  claim 1 , wherein the mold via hole or the mold trench includes a mold via pattern extending in one direction on the interposer chip. 
     
     
       8. The semiconductor package of  claim 1 , wherein the mold via hole or the mold trench includes a plurality of mold via patterns extending in one direction on the interposer chip and isolated from direct contact with each other. 
     
     
       9. The semiconductor package of  claim 1 , wherein
 the mold layer includes the mold via hole, and the electromagnetic shielding layer extends conformally on a surface defining a bottom of the mold via hole, one or more inner surfaces defining an inner wall of the mold via hole, and on one or more outer surfaces and opposing side walls of the mold layer, or 
 the mold layer includes the mold trench, and the electromagnetic shielding layer extends conformally on a surface defining a bottom of the mold trench, one or more inner surfaces defining an inner wall of the mold trench, and on one or more outer surfaces and opposing side walls of the mold layer. 
 
     
     
       10. The semiconductor package of  claim 1 , wherein
 the mold layer includes the mold via hole, an area of the semiconductor package includes a chip area in which the plurality of sub-chips of the first memory chip overlap each other in a vertical direction that extends perpendicular to an upper surface of the wiring substrate and a heat discharge area in which the plurality of sub-chips of the first memory chip do not overlap each other in the vertical direction, and the heat discharge area includes the mold via hole and the thermal discharge layer, or 
 the mold layer includes the mold trench, an area of the semiconductor package includes a chip area in which the plurality of sub-chips of the first memory chip overlap each other in a vertical direction that extends perpendicular to an upper surface of the wiring substrate and a heat discharge area in which the plurality of sub-chips of the first memory chip do not overlap each other in the vertical direction, and the heat discharge area includes the mold trench and the thermal discharge layer. 
 
     
     
       11. A semiconductor package, comprising:
 a wiring substrate; 
 an interposer chip disposed on the wiring substrate; 
 a first memory chip disposed on the interposer chip, wherein the first memory chip is electrically connected to the wiring substrate; 
 a second memory chip disposed on the interposer chip, wherein the second memory chip is isolated from direct contact with first memory chip, and the second memory chip is electrically connected to the wiring substrate; 
 a mold layer formed on the wiring substrate, wherein the mold layer covers the first memory chip and the second memory chip, and wherein the mold layer comprises a mold via hole or a mold trench; 
 an electromagnetic shielding layer formed on surfaces of the mold layer and a surface of a portion of the interposer chip; and 
 a thermal discharge layer disposed on the electromagnetic shielding layer within the mold via hole or the mold trench, 
 wherein the first memory chip includes a first multilayer chip that includes a plurality of first sub-chips which are stacked on the interposer chip, 
 wherein the plurality of first sub-chips are electrically connected to each other through one or more first through-vias, 
 wherein the second memory chip includes a second multilayer chip that includes a plurality of second sub-chips which are stacked on the interposer chip, 
 wherein the plurality of second sub-chips are electrically connected to each other through one or more second through-vias, and 
 wherein the electromagnetic shielding layer is directly in contact with the portion of the interposer chip at a bottom of the mold via hole or the mold trench. 
 
     
     
       12. The semiconductor package of  claim 11 , wherein the mold via hole or the mold trench is on the interposer chip and is between the first memory chip and the second memory chip. 
     
     
       13. The semiconductor package of  claim 11 , wherein the mold via hole or the mold trench is on an edge portion of the interposer chip and is proximate to the first memory chip in relation to the second memory chip and is isolated from direct contact with the first memory chip, or is proximate to the second memory chip in relation to the first memory chip and is isolated from direct contact with the second memory chip. 
     
     
       14. The semiconductor package of  claim 11 , wherein the first multilayer chip includes the plurality of first sub-chips that are sequentially stacked on the interposer chip, and the second multilayer chip includes the plurality of second sub-chips that are sequentially stacked on the interposer chip. 
     
     
       15. The semiconductor package of  claim 11 , wherein
 the interposer chip includes a heat spreader, and 
 the first memory chip and the second memory chip are each electrically connected to the wiring substrate via a separate bonding wire. 
 
     
     
       16. The semiconductor package of  claim 11 , wherein
 the first memory chip and the second memory chip are electrically connected to the wiring substrate via the interposer chip. 
 
     
     
       17. The semiconductor package of  claim 11 , wherein
 the interposer chip does not include an active element, and 
 the interposer chip includes an interposer substrate and an inner wiring layer on the surface and in an interior of the interposer substrate. 
 
     
     
       18. A semiconductor package, comprising:
 a wiring substrate; 
 an interposer chip disposed on the wiring substrate; 
 a first memory chip disposed on the interposer chip, wherein the first memory chip is electrically connected to the wiring substrate; 
 a second memory chip disposed on the interposer chip, wherein the second memory chip is isolated from direct contact with the first memory chip, and the second memory chip is electrically connected to the wiring substrate; 
 a mold layer formed on the wiring substrate, the mold layer covers the first memory chip and the second memory chip, and wherein the mold layer comprises a plurality of mold via holes or mold trenches in both a center region between the first memory chip and the second memory chip and in an edge portion of the interposer chip; 
 an electromagnetic shielding layer formed on surfaces of the mold layer and a surface of a portion of the interposer chip; and 
 a thermal discharge layer disposed on the electromagnetic shielding layer within the plurality of mold via holes or mold trenches, 
 wherein each memory chip of the first memory chip and the second memory chip includes a separate multilayer chip, each separate multilayer chip including a separate plurality of sub-chips which are stacked, 
 wherein the separate plurality of sub-chips are electrically connected to each other through one or more through-vias, 
 wherein the electromagnetic shielding layer is directly in contact with the portion of the interposer chip at a bottom of the plurality of mold via holes or mold trenches, and 
 wherein the first memory chip and the second memory chip are each electrically connected to the wiring substrate via a separate bonding wire and via the interposer chip. 
 
     
     
       19. The semiconductor package of  claim 18 , wherein
 the interposer chip includes a heat spreader, and 
 the first memory chip and the second memory chip are electrically connected to the wiring substrate via the separate bonding wires. 
 
     
     
       20. The semiconductor package of  claim 18 , wherein
 the interposer chip does not include an active element, and 
 the interposer chip includes an interposer substrate and an inner wiring layer on the surface and in an interior of the interposer substrate.