Package structure and method and equipment for forming the same

Abstract

A packaged semiconductor device and a method and apparatus for forming the same are disclosed. In an embodiment, a method includes bonding a device die to a first surface of a substrate; depositing an adhesive on the first surface of the substrate; depositing a thermal interface material on a surface of the device die opposite the substrate; placing a lid over the device die and the substrate, the lid contacting the adhesive and the thermal interface material; applying a clamping force to the lid and the substrate; and while applying the clamping force, curing the adhesive and the thermal interface material.

What is claimed is: 
     
       1. A semiconductor device comprising:
 an interposer substrate bonded to a package substrate; 
 a device die bonded to the interposer substrate; 
 an encapsulant surrounding the device die; 
 an underfill between the device die and the interposer substrate, wherein the underfill surrounds sidewalls of the interposer substrate; 
 an adhesive on the package substrate and a surface of the encapsulant opposite the package substrate; 
 a thermal interface material on a surface of the device die opposite the package substrate; and 
 a lid over the device die and the package substrate, wherein the lid contacts the adhesive and the thermal interface material, and wherein the adhesive has a thickness between the lid and the encapsulant greater than a thickness of the thermal interface material between the lid and the device die. 
 
     
     
       2. The semiconductor device of  claim 1 , wherein the underfill contacts sidewalls of the encapsulant. 
     
     
       3. The semiconductor device of  claim 1 , wherein the underfill extends between the interposer substrate and the package substrate. 
     
     
       4. The semiconductor device of  claim 1 , wherein the lid comprises recesses over the encapsulant, wherein the adhesive extends into the recesses in the lid. 
     
     
       5. The semiconductor device of  claim 1 , further comprising a seal ring between the lid and the package substrate, wherein a portion of the adhesive is disposed within the seal ring. 
     
     
       6. The semiconductor device of  claim 1 , wherein the adhesive contacts bottom surfaces and inner sidewalls of the lid. 
     
     
       7. The semiconductor device of  claim 1 , further comprising a second device die surrounded by the encapsulant, wherein the second device die is a low-power consuming die, wherein the device die is a high-power consuming die, wherein the lid has a first thickness over the device die in a first direction perpendicular to a major surface of the package substrate wherein the lid has a second thickness over the second device die in the first direction, and wherein the first thickness is greater than the second thickness. 
     
     
       8. The semiconductor device of  claim 7 , wherein a ratio of the first thickness to the second thickness is from 2 to 6. 
     
     
       9. A semiconductor device comprising:
 a substrate; 
 a device die bonded to a first surface of the substrate, the device die being surrounded by an encapsulant; 
 a low-power consuming die bonded to the substrate adjacent the device die, wherein the encapsulant extends continuously from a sidewall of the device die to a sidewall of the low-power consuming die; 
 a first adhesive disposed on the first surface of the substrate on opposite sides of the device die, the first adhesive being separated from the device die; 
 a second adhesive disposed on a surface of the device die opposite the substrate, the second adhesive contacting the encapsulant; 
 a thermal interface material disposed on the surface of the device die opposite the substrate, the thermal interface material contacting the device die; 
 a lid bonded to the substrate through the first adhesive and bonded to the device die through the thermal interface material and the second adhesive; and 
 a sealing ring disposed on opposite sides of the first adhesive and extending from the lid to the substrate. 
 
     
     
       10. The semiconductor device of  claim 9 , wherein the first adhesive contacts a bottom surface of the lid and an inner sidewall of the lid perpendicular to the bottom surface. 
     
     
       11. The semiconductor device of  claim 9 , further comprising spacers disposed in the first adhesive and the thermal interface material, the spacers separating the lid from the substrate and the device die. 
     
     
       12. The semiconductor device of  claim 9 , wherein the lid further comprises relief features configured to allow the lid to deform, the relief features being disposed over the encapsulant, the second adhesive extending into the relief features. 
     
     
       13. The semiconductor device of  claim 9 , wherein the device die comprises a high-power consuming die, wherein the semiconductor device further comprises a low-power consuming die adjacent the high-power consuming die, wherein the lid has a first thickness over the high-power consuming die and a second thickness over the low-power consuming die, and wherein the first thickness is greater than the second thickness. 
     
     
       14. The semiconductor device of  claim 9 , wherein the device die comprises a high-power consuming die, wherein the semiconductor device further comprises a low-power consuming die adjacent the high-power consuming die, wherein the thermal interface material is disposed between the high-power consuming die and the lid, and wherein the second adhesive is disposed between the low-power consuming die and the lid. 
     
     
       15. A semiconductor device comprising:
 a first substrate bonded to a second substrate; 
 a first die bonded to the first substrate; 
 a second die bonded to the first substrate adjacent the first die, 
 an encapsulant surrounding the first die; 
 an underfill between the first die and the first substrate, wherein the underfill surrounds sidewalls of the first substrate; 
 an adhesive on the second substrate and a surface of the encapsulant opposite the second substrate; 
 a thermal interface material on a surface of the first die opposite the second substrate; and 
 a lid over the first die and the second substrate, wherein the lid contacts the adhesive and the thermal interface material, and wherein the adhesive has a thickness between the lid and the encapsulant greater than a thickness of the thermal interface material between the lid and the first die. 
 
     
     
       16. The semiconductor device of  claim 15 , wherein the underfill extends between the first substrate and the second substrate. 
     
     
       17. The semiconductor device of  claim 15 , wherein the encapsulant extends continuously from a sidewall of the first die to a sidewall of the second die. 
     
     
       18. The semiconductor device of  claim 15 , wherein the adhesive extends into recesses in the lid. 
     
     
       19. The semiconductor device of  claim 15 , further comprising a seal ring between the lid and the second substrate, wherein a portion of the adhesive is disposed within the seal ring. 
     
     
       20. The semiconductor device of  claim 15 , wherein the second die is a low-power consuming die, wherein the first die is a high-power consuming die, wherein the lid has a first thickness over the first die in a first direction perpendicular to a major surface of the first substrate, wherein the lid has a second thickness over the second die in the first direction, and wherein the first thickness is greater than the second thickness.