Methods and apparatus for minimizing substrate backside damage

Abstract

Embodiments of the present disclosure generally relate to apparatus and methods for reducing substrate backside damage during semiconductor device processing. In one implementation, a method of chucking a substrate in a substrate process chamber includes exposing the substrate to a plasma preheat treatment prior to applying a chucking voltage to a substrate support. In one implementation, a substrate support is provided and includes a body having an electrode and thermal control device disposed therein. A plurality of substrate supporting features are formed on an upper surface of the body, each of the substrate supporting features having a substrate supporting surface and a rounded edge.

What is claimed is: 
     
       1. A substrate support, comprising:
 a body formed of a material comprising a grain size between about 1 μm and about 4 μm; 
 an electrode disposed within the body; 
 a temperature control device disposed within the body; and 
 a plurality of substrate supporting features formed on a substrate supporting region of the substrate support, the plurality of substrate supporting features comprising between about 75 and about 100 substrate support features, each of the substrate supporting features having a substrate supporting surface and a rounded edge, wherein a distance between each substrate supporting feature is between about 0.7 mm and 3 mm, and wherein each of the plurality of substrate supporting features have a surface roughness between about 2 Ra and about 3 Ra. 
 
     
     
       2. The substrate support of  claim 1 , wherein each of the plurality of substrate supporting features has a diameter between about 0.5 mm and about 2 mm. 
     
     
       3. The substrate support of  claim 2 , wherein each of the plurality of substrate supporting features has a height between about 16 μm and about 50 μm. 
     
     
       4. The substrate support of  claim 1 , wherein the substrate supporting surface of each of the plurality of substrate supporting features is substantially planar. 
     
     
       5. The substrate support of  claim 1 , wherein the grain size is between about 2 μm and about 3 μm. 
     
     
       6. The substrate support of  claim 1 , further comprising a ledge formed around an upper surface of the substrate support to define the substrate supporting region. 
     
     
       7. A substrate support, comprising:
 a body formed of a material comprising a grain size between about 1 μm and about 4 μm; 
 an electrode disposed within the body; 
 a temperature control device disposed within the body; and 
 a plurality of substrate supporting features formed on a substrate supporting region of the substrate support, each of the substrate supporting features having a substrate supporting surface and a rounded edge, wherein a distance between each substrate supporting feature is between about 0.7 mm and 3 mm, and wherein each of the plurality of substrate supporting features have a surface roughness between about 1 Ra and about 4 Ra. 
 
     
     
       8. The substrate support of  claim 7 , wherein the substrate supporting surface of each of the plurality of substrate supporting features is substantially planar. 
     
     
       9. The substrate support of  claim 8 , wherein the grain size is between about 2 μm and about 3 μm. 
     
     
       10. The substrate support of  claim 9 , wherein each of the plurality of substrate supporting features has a diameter between about 0.5 mm and about 2 mm. 
     
     
       11. The substrate support of  claim 10 , wherein each of the plurality of substrate supporting features has a height between about 16 μm and about 50 μm. 
     
     
       12. A substrate support, comprising:
 a body formed of a material comprising a grain size between about 1 μm and about 4 μm; 
 an electrode disposed within the body; 
 a temperature control device disposed within the body; and 
 a plurality of substrate supporting features formed on a substrate supporting region of the substrate support, the plurality of substrate supporting features comprising between about 50 and about 200 substrate support features, each of the substrate supporting features having a substrate supporting surface and a rounded edge, and wherein a distance between each substrate supporting feature is between about 0.7 mm and 3 mm. 
 
     
     
       13. The substrate support of  claim 12 , wherein each of the plurality of substrate supporting features have a surface roughness between about 8 Ra and about 16 Ra. 
     
     
       14. The substrate support of  claim 12 , wherein each of the plurality of substrate supporting features have a surface roughness between about 16 Ra and about 64 Ra. 
     
     
       15. The substrate support of  claim 12 , wherein a ratio of a distance between adjacent substrate supporting features and a diameter of the substrate supporting region is between about 0.05 and about 0.15. 
     
     
       16. The substrate support of  claim 12 , wherein the plurality of substrate supporting features comprises between about 75 and about 100 substrate support features. 
     
     
       17. The substrate support of  claim 12 , wherein each of the plurality of substrate supporting features has a height between about 16 μm and about 50 μm.