Systems for plasma enhanced chemical vapor deposition and bevel edge etching

Abstract

Embodiments described herein relate to a substrate processing system that integrates substrate edge processing capabilities. Illustrated examples of the processing system include, without limitations, a factory interface, a loadlock chamber, a transfer chamber, and one or more twin process chambers having two or more processing regions that are isolatable from each other and share a common gas supply and a common exhaust pump. The processing regions in each twin process chamber include separate gas distribution assemblies and RF power sources to provide plasma at selective regions on a substrate surface in each processing region. Each twin process chamber is thereby configured to allow multiple, isolated processes to be performed concurrently on at least two substrates in the processing regions.

1 . An apparatus for processing multiple substrates, comprising:
 a loadlock chamber;   a transfer chamber coupled to the loadlock chamber;   one or more twin process chambers coupled to the transfer chamber; and   a substrate edge processing chamber coupled to the transfer chamber, the substrate edge processing chamber comprising:
 a substrate support having a substrate support surface; and 
 a gas distribution bowl disposed over the substrate support, wherein the gas distribution bowl comprises:
 an outer wall; and 
 a bottom, wherein a plurality of slits are formed near a peripheral region of the bottom, the plurality of slits are configured to deliver a processing gas towards an edge region of the substrate support surface. 
 
   
     
     
         2 . The apparatus of  claim 1 , wherein the gas distribution bowl is connected to a remote plasma source, and configured to distribute a plasma from the remote plasma source to the edge region of the substrate support surface. 
     
     
         3 . The apparatus of  claim 2 , wherein the substrate edge processing chamber is disposed between the transfer chamber and a factory interface. 
     
     
         4 . The apparatus of  claim 3 , further comprising a load lock chamber disposed between the transfer chamber and the factor interface, wherein the substrate edge processing chamber and the load lock chamber are vertically stacked together. 
     
     
         5 . The apparatus of  claim 4 , wherein the substrate edge processing chamber further comprising:
 a first slit valve door adapted to connect with the factory interface; and   a second slit valve door adapted to connect with the transfer chamber.   
     
     
         6 . The apparatus of  claim 3 , further comprising a load lock chamber disposed between the transfer chamber and the factor interface, wherein the substrate edge processing chamber and the load lock chamber are arranged side by side. 
     
     
         7 . The apparatus of  claim 3 , wherein the substrate edge processing chamber comprises a chamber body assembly defining a first processing region and a second processing region, the first and second processing regions are vertically stacked together, the substrate support and the gas distribution bowl are disposed in the first processing region, and the substrate edge processing chamber further comprises:
 an additional substrate support disposed in the second processing region; and   an additional gas distribution bowl disposed over the additional substrate support in the second processing region, wherein the additional gas distribution bowl comprises:
 an outer wall; and 
 a bottom, wherein a plurality of slits are formed near a peripheral region of the bottom, the plurality of slits are configured to deliver a processing gas towards an edge region of the additional substrate support. 
   
     
     
         8 . The apparatus of  claim 7 , further comprising a load lock chamber disposed between the transfer chamber and the factor interface, wherein the substrate edge processing chamber and the load lock chamber are arranged side by side. 
     
     
         9 . The apparatus of  claim 1 , wherein the gas distribution bowl further comprises an inner wall defining a gas conduit, and the gas conduit opens at a central area of the bottom. 
     
     
         10 . The apparatus of  claim 9 , wherein the gas conduit is adapted to connect with a purge gas source and deliver a purge gas towards a central area of the substrate supporting surface. 
     
     
         11 . The apparatus of  claim 1 , wherein the substrate edge processing chamber is a twin processing chamber coupled to the transfer chamber, the substrate edge processing chamber comprises a chamber body assembly defining a first processing region and a second processing region, the first and second processing regions are arranged side by side, the substrate support and the gas distribution bowl are disposed in the first processing region, and the substrate edge processing chamber further comprises:
 an additional substrate support disposed in the second processing region; and   an additional gas distribution bowl disposed over the additional substrate support in the second processing region, wherein the additional gas distribution bowl comprises:
 an outer wall; and 
 a bottom, wherein a plurality of slits are formed near a peripheral region of the bottom, the plurality of slits are configured to deliver a processing gas towards an edge region of the additional substrate support. 
   
     
     
         12 . An apparatus for processing multiple substrates, comprising:
 a loadlock chamber;   a transfer chamber coupled to the loadlock chamber;   one or more twin process chambers coupled to the transfer chamber; and   a substrate edge processing chamber coupled to the transfer chamber, the substrate edge processing chamber comprising:
 a substrate support having a substrate support surface; 
 a plasma generator configured to supply an etching agent in a plasma phase; and 
 a gas delivery assembly coupled to a gas source, wherein the gas delivery assembly comprises a gas bowl coupled to a chamber lid, the gas bowl comprises:
 an outer wall; and 
 a bottom facing the substrate support surface, wherein a periphery area of the bottom has a plurality of slits configured to deliver the etching agent from the plasma generator to a peripheral region of the substrate support surface. 
 
   
     
     
         13 . The apparatus of  claim 12 , wherein the gas bowl further comprises an inner wall, a gas conduit is defined by the inner wall and opens at a central area of the bottom, and the gas conduit is coupled to a purge gas and delivers a purge gas towards a central region of the substrate support surface. 
     
     
         14 . The apparatus of  claim 12 , wherein the plurality of slits are angled outwards to avoid gas flow towards the center region of the substrate support surface. 
     
     
         15 . The apparatus of  claim 14 , wherein the substrate edge processing chamber comprises a first processing region and a second processing region vertically stacked together. 
     
     
         16 . The apparatus of  claim 15 , wherein the substrate edge processing chamber is disposed between a factory interface and the transfer chamber, and the substrate support and the gas delivery assembly are disposed in the first processing region, and the second processing region is a load lock chamber. 
     
     
         17 . The apparatus of  claim 15 , wherein the substrate support and the gas delivery assembly are disposed in the first processing region, and the substrate edge processing chamber further comprises an additional substrate support and an additional gas delivery assembly disposed in the second processing region. 
     
     
         18 . An apparatus for processing a substrate, comprising:
 a chamber body assembly defining a first processing region and a second processing region, the first and second processing regions are vertically stacked together;   a substrate support having a substrate support surface disposed in the first processing region; and   a gas distribution bowl disposed over the substrate support in the first processing region, wherein the gas distribution bowl comprises:
 an outer wall; and 
 a bottom, wherein a plurality of slits are formed near a peripheral region of the bottom, the plurality of slits are configured to deliver a processing gas towards an edge region of the substrate support surface. 
   
     
     
         19 . The apparatus of  claim 18 , wherein the second processing region is a load lock chamber. 
     
     
         20 . The apparatus of  claim 18 , further comprising:
 an additional substrate support disposed in the second processing region; and   an additional gas distribution bowl disposed over the additional substrate support in the second processing region, wherein the additional gas distribution bowl comprises:
 an outer wall; and 
 a bottom, wherein a plurality of slits are formed near a peripheral region of the bottom, the plurality of slits are configured to deliver a processing gas towards an edge region of the additional substrate support.