Coils for generating a plasma and for sputtering

Abstract

A sputtering coil for a plasma chamber in a semiconductor fabrication system is provided. The sputtering coil couples energy into a plasma and also provides a source of sputtering material to be sputtered onto a workpiece from the coil to supplement material being sputtered from a target onto the workpiece. Alternatively a plurality of coils may be provided, one primarily for coupling energy into the plasma and the other primarily for providing a supplemental source of sputtering material to be sputtered on the workpiece.

1 - 17 . (canceled) 
     
     
         18 . A method of depositing material on a workpiece in a sputter deposition chamber, comprising
 sputtering target material onto said workpiece from a target positioned in said chamber;   sputtering coil material onto said workpiece from a coil positioned adjacent said workpiece; and   wherein said coil is inductively coupled to a gas in the chamber.   
     
     
         19 . The method of  claim 18  further comprising adjusting the ratio of RF power applied to said coil relative to the DC power applied to said target to compensate for nonuniformity in thickness of said target material being sputtered onto said workpiece from said target. 
     
     
         20 . The method of  claim 19  wherein said ratio is approximately 1.5. 
     
     
         21 . The method of  claim 18  wherein said target material and said coil material are the same type of material. 
     
     
         22 . The method of  claim 18  wherein said target material and said coil material are different types of material. 
     
     
         23 . The method of  claim 18  wherein said target material and said coil material are sputtered in quantities which compensate for nonuniformities in thickness of said target material sputtered onto said workpiece. 
     
     
         24 . The method of  claim 18  wherein said target material and said coil material are sputtered at different rates. 
     
     
         25 . The method of  claim 23  wherein said coil material is deposited on at least a portion of said workpiece at a rate of at least 50 Å per minute. 
     
     
         26 - 32 . (canceled) 
     
     
         33 . A method of depositing material on a workpiece, comprising
 energizing a plasma with RF energy from a first coil;   sputtering target material onto said workpiece from a target positioned above said workpiece; and   sputtering coil material onto said workpiece from a second coil positioned adjacent said workpiece.   
     
     
         34 . The method of  claim 33  further comprising adjusting the ratio of DC power applied to said second coil relative to the DC power applied to said target to compensate for nonuniformity in thickness of said target material being sputtered onto said workpiece from said target. 
     
     
         35 . The method of  claim 33  wherein said target material and said second coil material are the same type of material. 
     
     
         36 . The method of  claim 33  wherein said target material and said second coil material are sputtered in quantities which compensate for nonuniformities in thickness of said target material sputtered onto said workpiece. 
     
     
         37 . The method of  claim 36  wherein said second coil material is deposited on at least a portion of said workpiece at a rate of at least 50 Å per minute. 
     
     
         38 . The method of  claim 35  wherein said first coil is formed of the same type of material as said target, said first coil being positioned to sputter said first coil material onto said workpiece so that said first coil material together with said second coil material and said target material are deposited on said workpiece to form a layer. 
     
     
         39 . The method of  claim 36  wherein said first coil material and said second coil material are deposited on at least a portion of said workpiece at a combined rate of at least 50 Å per minute. 
     
     
         40 . The method of  claim 33  wherein said first and second coils each have a plurality of turns interleaved with turns of the other coil. 
     
     
         41 . A method of depositing material on a workpiece in a sputter deposition chamber, comprising:
 forming a layer of deposition material on the workpiece, said forming including:
 sputtering target material onto said workpiece in a first deposition profile from a target positioned in said chamber; and 
 sputtering coil material onto said workpiece in a second deposition profile from a coil positioned in said chamber; 
   wherein the layer of sputtered target material and sputtered coil material has an overall deposition profile which is a combination of the first and second deposition profiles and which is more uniform than the first deposition profile of the sputtered target material.   
     
     
         42 . The method of  claim 41  wherein the coil material sputtering includes DC biasing the coil. 
     
     
         43 . The method of  claim 42  wherein the coil material sputtering includes applying RF power to the coil. 
     
     
         44 . The method of  claim 43  wherein the coil material sputtering includes separately adjusting the levels of the DC bias and RF power applied to the coil to achieve a particular second deposition profile of sputtered coil material. 
     
     
         45 . The method of  claim 41  wherein said target material sputtering comprises applying DC power to said target and said coil material sputtering comprising applying DC biasing to said coil, said method further comprising adjusting the DC biasing applied to said coil relative to the DC power applied to said target to compensate for nonuniformity in thickness of said target material being sputtered onto said workpiece from said target. 
     
     
         46 . The method of  claim 41  wherein said target material sputtering comprises applying DC power to said target and said coil material sputtering comprising applying RF power to said coil, said method further comprising adjusting the RF power applied to said coil relative to the DC power applied to said target to compensate for nonuniformity in thickness of said target material being sputtered onto said workpiece from said target. 
     
     
         47 . The method of  claim 41  wherein said target material sputtering comprises applying DC power to said target and said coil material sputtering comprising applying RF power to said coil through a matching network which includes capacitors, said method further comprising adjusting DC biasing applied to said coil relative to the DC power applied to said target, said adjusting DC biasing applied to said coil including adjusting the capacitance of a capacitor of the matching network, to compensate for nonuniformity in thickness of said target material being sputtered onto said workpiece from said target. 
     
     
         48 . The method of  claim 41  wherein said coil material sputtering comprises applying RF power to said coil using a first RF generator coupled to said coil and a second RF generator capacitively coupled to said coil, said first RF generator providing RF power at a first frequency, said second RF generator providing RF power at a second frequency different from said first frequency, and adjusting DC biasing applied to said coil including adjusting the RF power of the second generator relative to that of the first RF generator, to compensate for nonuniformity in thickness of said target material being sputtered onto said workpiece from said target. 
     
     
         49 . The method of  claim 41  wherein the workpiece has a center and an edge, and wherein said target material sputtering comprises sputtering target material onto said workpiece in the first deposition profile so that target material is deposited at a higher rate toward said center of said workpiece as compared to said edge of said workpiece, and said coil material sputtering comprises sputtering coil material onto said workpiece in the second deposition profile from the coil positioned in said chamber adjacent said workpiece so that coil material is deposited at a higher rate toward said edge of said workpiece as compared to said center of said workpiece, to compensate for nonuniformity in thickness of said target material being sputtered onto said workpiece from said target.