US2018127868A1PendingUtilityA1
Coating system and method for coating interior fluid wetted surfaces of a component of a semiconductor substrate processing apparatus
Est. expiryDec 31, 2033(~7.5 yrs left)· nominal 20-yr term from priority
Inventors:Lin XuHong ShihNash W. AndersonTom StevensonJohn DaughertyJohn Michael KernsRobert Griffith O'Neill
C23C 16/4402Y10T428/31678Y10T428/31786Y10T428/31721C23C 16/045C23C 14/564C23C 16/4404Y10T428/31725Y10T428/31551C23C 16/45525Y10T428/263Y10T428/31504Y10T29/41H10P 14/24
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Claims
Abstract
A fluid handling component for a vacuum chamber of a semiconductor substrate processing apparatus is provided. The fluid handling component comprises interior fluid wetted surfaces and an atomic layer deposition (ALD) or molecular layer deposition (MLD) barrier coating on the interior fluid wetted surfaces wherein the fluid wetted surfaces which include the ALD or MLD barrier coating are configured to be contacted by a process gas and/or fluid during a semiconductor substrate processing process wherein the ALD or MLD barrier coating protects the underlying fluid wetted surfaces from erosion and/or corrosion.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A fluid handling component for a vacuum chamber of a semiconductor substrate processing apparatus, the fluid handling component comprising interior fluid wetted surfaces and an atomic layer deposition (ALD) or molecular layer deposition (MLD) barrier coating on the interior fluid wetted surfaces wherein the fluid wetted surfaces including the ALD or MLD barrier coating are configured to be contacted by a process gas and/or fluid during a semiconductor substrate processing process wherein the ALD or MLD barrier coating protects the underlying fluid wetted surfaces from erosion and/or corrosion.
2 . The fluid handling component of claim 1 , wherein the fluid handling component is an exhaust assembly, a gas delivery system, a gas box, a gas stick, a proximity head, an air filtering unit, a deionized water circulation system, a facility line, a gas line, a gas distribution system including a gas switching section, a temperature controlled top plate, a temperature controlled base plate, and/or a diffuser of the vacuum chamber of the semiconductor substrate processing apparatus.
3 . The fluid handling component of claim 1 , wherein the ALD barrier coating includes tantalum (Ta), titanium (Ti), tungsten (W), zirconium (Zr), hafnium (Hf), molybdenum (Mo), niobium (Nb), vanadium (V), ruthenium (Ru) and/or chromium (Cr) and mixtures and/or alloys thereof.
4 . The fluid handling component of claim 1 , wherein the ALD barrier coating is:
(a) an oxide, nitride, or fluoride material; and/or (b) aluminum oxide (Al 2 O 3 ).
5 . The fluid handling component of claim 1 , wherein the MLD barrier coating is:
(a) a polyamide, a polyimide, a polyuria, a polythiourea, a polyurethane, a polyazomethine, or a polyester material; and/or (b) an organic, or an organic-inorganic hybrid material.
6 . The fluid handling component of claim 1 wherein thickness of the ALD or MLD barrier coating is about 0.1 to 500 nm or greater.
7 . The fluid handling component of claim 1 , wherein the interior fluid wetted surfaces comprises a plurality of parts that are pre-assembled and vacuum sealed before formation of the ALD or MLD barrier coating.
8 . The fluid handling component of claim 7 , the plurality of parts when pre-assembled is configured to form a process space for the ALD or MLD barrier coating.Cited by (0)
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