US2019385815A1PendingUtilityA1

Film forming apparatus

Assignee: TOKYO ELECTRON LTDPriority: Jun 13, 2018Filed: Jun 4, 2019Published: Dec 19, 2019
Est. expiryJun 13, 2038(~11.9 yrs left)· nominal 20-yr term from priority
H10P 72/0604C23C 16/4581C23C 16/45568C23C 16/50C23C 16/4585H01J 37/32568H01J 37/32183H01J 37/32027H01J 2237/334H01J 2237/3321H01J 2237/327H01L 21/67253H10P 72/72H10P 72/0434H01J 37/32091H01J 37/32532C23C 16/45536C23C 16/405H10P 72/0402H10P 14/6336H10P 14/6339
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Claims

Abstract

A film forming apparatus includes a vacuum-evacuable processing chamber, a lower electrode for mounting thereon a target substrate, an upper electrode disposed to face the lower electrode, a gas supply unit, a voltage application unit and a switching unit. The gas supply unit supplies a film forming source gas to be formed into plasma to a processing space between the upper and the lower electrode. The voltage application unit applies to the upper electrode a voltage outputted from at least one of a high frequency power supply and a DC power supply included therein. The switching unit selectively switches the voltage to be applied to the upper electrode among a high frequency voltage outputted from the high frequency power supply, a DC voltage outputted from the DC power supply, and a superimposed voltage in which the DC voltage is superimposed with the high frequency voltage.

Claims

exact text as granted — not AI-modified
1 . A film forming apparatus comprising:
 a vacuum-evacuable processing chamber;   a lower electrode on which a target substrate to be processed is mounted in the processing chamber;   an upper electrode disposed to face the lower electrode in the processing chamber;   a gas supply unit configured to supply a film forming source gas to be formed into plasma to a processing space between the upper electrode and the lower electrode;   a voltage application unit including a high frequency power supply and a DC power supply and configured to apply a voltage outputted from at least one of the high frequency power supply and the DC power supply to the upper electrode; and   a switching unit configured to selectively switch the voltage outputted from the voltage application unit to the upper electrode among a high frequency voltage outputted from the high frequency power supply, a DC voltage outputted from the DC power supply, and a superimposed voltage in which the DC voltage is superimposed with the high frequency voltage.   
     
     
         2 . The film forming apparatus of  claim 1 , further comprising:
 an impedance control circuit connected between the lower electrode and the ground.   
     
     
         3 . The film forming apparatus of  claim 1 , wherein the DC voltage outputted from the DC power supply is a pulsed DC voltage. 
     
     
         4 . The film forming apparatus of  claim 2 , wherein the DC voltage outputted from the DC power supply is a pulsed DC voltage. 
     
     
         5 . The film forming apparatus of  claim 1 , wherein the DC voltage outputted from the DC power supply is a constant voltage. 
     
     
         6 . The film forming apparatus of  claim 2 , wherein the DC voltage outputted from the DC power supply is a constant voltage.

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