Vacuum-integrated hardmask processes and apparatus

Abstract

Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.

What is claimed is: 
     
         1 . A semiconductor processing apparatus, comprising:
 a dry deposition module comprising a reactor chamber for dry depositing an EUV-sensitive organometallic film on a semiconductor substrate; and   a dry development module for removing an unexposed portion of a pattern formed in the organometallic film on the substrate by EUV exposure of a portion of the organometallic film;   a controller including one or more memory devices, one or more processors and system control software coded with instructions for conducting photoresist-less metal mask formation, the instructions comprising instructions for,   in the deposition module, dry depositing the EUV-sensitive organometallic film on a semiconductor substrate; and   in the dry development module, obtaining the semiconductor substrate following EUV lithographic patterning of the organometallic film by exposure of a portion of the organometallic film to EUV radiation, resulting in a pattern of exposed and unexposed portions in the organometallic film, and dry developing the pattern in the organometallic film to remove the unexposed portion of the organometallic film to form a metal-containing hardmask.   
     
     
         2 . The apparatus of  claim 1 , further comprising vacuum transfer module interfaces connecting the deposition and development modules of the processing apparatus. 
     
     
         3 . The apparatus of  claim 1 , further comprising an organometallic film patterning module comprising an Extreme Ultraviolet (EUV) photolithography tool with a source of sub-30 nm wavelength radiation. 
     
     
         4 . The apparatus of  claim 3 , further comprising vacuum transfer module interfaces connecting the deposition, patterning and development modules of the processing apparatus. 
     
     
         5 . The apparatus of  claim 4 , wherein the controller further comprises system control software coded with instructions for, following the dry deposition, transferring the substrate under vacuum to the patterning module comprising the Extreme Ultraviolet (EUV) photolithography tool and exposing the portion of the organometallic film on the substrate to EUV radiation to form the pattern. 
     
     
         6 . The apparatus of  claim 3 , wherein the EUV photolithography tool source emits radiation having a wavelength in the range of 10 to 20 nm. 
     
     
         7 . The apparatus of  claim 6 , wherein the EUV photolithography tool source emits radiation having a wavelength of 13.5 nm. 
     
     
         8 . The apparatus of  claim 1 , wherein the organometallic film is an organotin film. 
     
     
         9 . The apparatus of  claim 1 , wherein the dry development module further comprises a heater to heat the substrate to volatilize unexposed regions of the organometallic film. 
     
     
         10 . A method of processing a semiconductor substrate, comprising:
 dry depositing an EUV-sensitive an organometallic film on a semiconductor substrate;   obtaining EUV lithographic patterning of the organometallic film by exposure of a portion of the organometallic film to EUV radiation, resulting in a pattern of exposed and unexposed portions in the organometallic film; and   dry developing the pattern in the organometallic film to remove the unexposed portion of the organometallic film to form a metal-containing hardmask.   
     
     
         11 . The method of  claim 10 , wherein the semiconductor substrate is a silicon wafer including partially-formed integrated circuits, and the method further comprising:
 prior to the deposition, providing the semiconductor substrate in a first reactor chamber for the organometallic film deposition; and   following the deposition, transferring the substrate under vacuum to a EUV lithography processing chamber for the patterning.   
     
     
         12 . The method of  claim 11 , further comprising, prior to entering the EUV lithography processing chamber, outgassing the substrate. 
     
     
         13 . The method of  claim 10 , wherein the EUV lithography processing chamber has a EUV photolithography source that emits radiation having a wavelength in the range of 10 to 20 nm. 
     
     
         14 . The method of  claim 13 , wherein the EUV photolithography tool source emits radiation having a wavelength of 13.5 nm. 
     
     
         15 . The method of  claim 10 , wherein the organometallic film is an organotin film. 
     
     
         16 . The method of  claim 10 , wherein the dry development of the pattern comprises heating the substrate to volatilize unexposed regions of the organometallic film.