Vacuum-integrated hardmask processes and apparatus

Abstract

Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.

What is claimed is: 
     
         1 . A method of processing a substrate comprising:
 a) depositing an EUV-sensitive film comprising tin on a substrate;   b) placing the substrate with the deposited EUV-sensitive film formed in a) in an environment of sub-atmospheric pressure to facilitate degassing of the deposited EUV-sensitive film;   c) exposing of a portion of the deposited EUV-sensitive film to EUV radiation to form a pattern of exposed and unexposed regions in the deposited EUV-sensitive film, wherein the EUV radiation has a wavelength in a range of 10 to 20 nm; and   d) performing a pattern development process to remove portions of the deposited EUV-sensitive film.   
     
     
         2 . The method of  claim 1 , wherein the pattern development process comprises heating the substrate with the deposited EUV-sensitive film. 
     
     
         3 . The method of  claim 1 , wherein b) is performed at a pressure of no more than 1E −8  Torr. 
     
     
         4 . The method of  claim 1 , wherein c) is performed in a vacuum integrated system. 
     
     
         5 . The method of  claim 1 , wherein a) and b) are performed in a vacuum integrated system. 
     
     
         6 . The method of  claim 1 , wherein a) and b) are performed in separate modules connected by a common vacuum transfer module. 
     
     
         7 . The method of  claim 1 , wherein b) and c) are performed in a vacuum integrated system. 
     
     
         8 . The method of  claim 1 , wherein b) and c) are performed in separate modules connected by a common vacuum transfer module. 
     
     
         9 . The method of  claim 1 , wherein c) and d) are performed in a vacuum integrated system. 
     
     
         10 . The method of  claim 1 , wherein c) and d) are performed in are performed in separate modules connected by a common vacuum transfer module. 
     
     
         11 . A system for processing a semiconductor substrate comprising:
 a plurality of process modules, the process modules including   a) a deposition module for depositing an EUV-sensitive metal-containing film comprising tin on a semiconductor substrate;   b) a degassing module for degassing the EUV-sensitive metal-containing film under sub-atmospheric pressure;   c) an exposure module for exposing a portion of the EUV-sensitive metal-containing film to EUV radiation with a wavelength in a range of 10 to 20 nm in an EUV-patterning tool to form a patterned film comprising exposed and unexposed regions; and   d) a development module for performing a pattern development process to remove unexposed regions of the patterned film.   
     
     
         12 . The system of  claim 11 , wherein the pattern development process includes heating the semiconductor substrate with the patterned film. 
     
     
         13 . The system of  claim 11 , wherein b) is at a pressure of no more than 1E −8  Torr. 
     
     
         14 . The system of  claim 11 , further comprising a common transfer module connecting at least two of the process modules in the system. 
     
     
         15 . The system of  claim 11 , wherein the semiconductor substrate is transferred between process modules under vacuum. 
     
     
         16 . The system of  claim 11 , wherein the semiconductor substrate is transferred between process modules in a controlled environment. 
     
     
         17 . A method of processing a substrate comprising:
 depositing an EUV-sensitive film comprising tin on a substrate in a process chamber; and   exposing of a portion of the EUV-sensitive film to EUV radiation in a photolithography chamber having an EUV source to form a pattern of exposed and unexposed regions in the EUV-sensitive film;   wherein the EUV source emits a radiation having a wavelength in a range of about 10 nm to 20 nm; and wherein the process chamber is integrated onto a lithography platform.   
     
     
         18 . The method of  claim 17 , wherein the lithography platform is a wafer stepper. 
     
     
         19 . The method of  claim 17 , wherein the EUV-sensitive film deposited on the substrate is transferred between the process chamber and the lithography chamber in a controlled environment. 
     
     
         20 . A system for processing a substrate comprising:
 a deposition chamber for depositing an EUV-sensitive film comprising tin on a substrate; and   an exposure module for exposing of a portion of the EUV-sensitive film to EUV radiation in a photolithography chamber having an EUV source to form a pattern of exposed and unexposed regions in the EUV-sensitive film, wherein the EUV source emits a radiation having a wavelength in a range of about 10 nm to 20 nm; and   wherein the deposition chamber is integrated onto a lithography platform.   
     
     
         21 . The system of  claim 20 , wherein the lithography platform is a wafer stepper. 
     
     
         22 . The system of  claim 20 , wherein the EUV-sensitive film deposited on the substrate is transferred between the deposition chamber and the lithography chamber in a controlled environment.