US2025349750A1PendingUtilityA1
Integrated circuit packages and methods of forming the same
Assignee: TAIWAN SEMICONDUCTOR MFG CO LTDPriority: Aug 9, 2022Filed: Jul 23, 2025Published: Nov 13, 2025
Est. expiryAug 9, 2042(~16.1 yrs left)· nominal 20-yr term from priority
Inventors:Der-Chyang YehKuo-Chiang TingYu-Hsiung WangChao-Wen ShihSung-Feng YehTa Hao SungCheng-Wei HuangYen-Ping WangChang-Wen HuangSheng-Ta LinLi-Cheng HuGao-Long Wu
H10W 74/134H10W 74/016H10W 42/00H10W 20/20H10W 20/0245H10W 80/00H10W 90/291H10W 90/297H10W 90/20H10W 90/00H10W 74/137H10W 74/117H10W 74/121H10W 74/019H10W 74/014H10W 42/121H10P 72/7424H10P 72/7416H10P 54/00H10P 72/74H01L 23/585H01L 23/481H01L 23/3178H01L 21/565H01L 23/562H10W 72/01H10W 20/435H10W 20/42H10W 74/141H10W 74/473
76
PatentIndex Score
0
Cited by
0
References
0
Claims
Abstract
Embodiments include a crack stopper structure surrounding an embedded integrated circuit die, and the formation thereof. The crack stopper structure may include multiple layers separated by a fill layer. The layers of the crack stopper may include multiple sublayers, some of the sublayers providing adhesion, hardness buffering, and material gradients for transitioning from one layer of the crack stopper structure to another layer of the crack stopper structure.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A method comprising:
forming a first crack stopper layer of a first crack stopper structure over a first integrated circuit die and along sidewalls of the first integrated circuit die; forming a second crack stopper layer of the first crack stopper structure over the first crack stopper layer; depositing a first gap-filling dielectric around the first crack stopper structure and the first integrated circuit die; prior to forming the second crack stopper layer, forming a dielectric film over the first crack stopper layer; bonding a second integrated circuit die to the first integrated circuit die;
forming a second crack stopper structure over and along sidewalls of the second integrated circuit die; and
depositing a second gap-filling dielectric around the second crack stopper structure and the second integrated circuit die.Cited by (0)
No later patents cite this yet.
References (0)
No backward citations on record.