Methods and compositions for chemical mechanical polishing

Abstract

Methods and apparatus are provided for planarizing substrate surfaces with selective removal rates and low dishing. One aspect of the method provides for processing a substrate including providing a substrate to a polishing platen having polishing media disposed thereon, providing an abrasive free polishing composition comprising one or more surfactants to the substrate surface to modify the removal rates of the at least the first dielectric material and the second dielectric material, polishing the substrate surface, and removing the second material at a higher removal rate than the first material from a substrate surface. One aspect of the apparatus provides a system for processing substrates including a platen adapted for polishing the substrate with polishing media and a computer based controller configured to perform one aspect of the method.

What is claimed is:  
     
       1. A method of processing a substrate, comprising: 
       contacting the substrate having at least first and second dielectric materials disposed thereon with a polishing platen having polishing media disposed thereon;  
       providing an abrasive free polishing composition comprising one or more electronegative surfactants to the substrate; and  
       removing the first dielectric material at a higher removal rate than the second dielectric material.  
     
     
       2. The method of  claim 1 , wherein the one or more electronegative surfactants are selected from the group of potassium oleate, sulfosuccinates, sulfosuccinate derivatives, sulfated fatty esters, phosphate esters, alkylanyl sulfonates, sulfates of alcohols, carboxylated alcohols, lignin, lignin derivatives, and combinations thereof. 
     
     
       3. The method of  claim 1 , wherein the one or more electronegative surfactants comprise between about 0.02 vol % and about 10 vol % of the composition. 
     
     
       4. The method of  claim 1 , wherein the polishing composition further comprises a dispersant, one or more pH adjusting agents, deionized water, or combinations thereof. 
     
     
       5. The method of  claim 1 , wherein the first dielectric material is an oxide and the second dielectric material is a nitride. 
     
     
       6. The method of  claim 5 , wherein the oxide is silicon oxide and the nitride is silicon nitride. 
     
     
       7. The method of  claim 1 , wherein the first dielectric material is removed at a rate between about 100 Å/min and about 5000 Å/min. 
     
     
       8. The method of  claim 1 , wherein the second dielectric material is removed at a rate between about 0 Å/min and about 100 Å/min. 
     
     
       9. The method of  claim 1 , wherein the first dielectric material and the second dielectric material are removed at a removal rate ratio of the first material to the second material of about 10:1 or greater. 
     
     
       10. A method of processing a substrate, comprising: 
       providing the substrate having an oxide material disposed on a nitride material disposed thereon to a polishing platen having polishing media disposed thereon;  
       providing a polishing composition consisting essentially of one or more electronegative surfactants, one or more pH adjusting agents, and deionized water, to a substrate surface;  
       forming a removal resistant surface on the nitride material; and  
       removing the oxide material and nitride material at a removal rate ratio of the oxide material to the nitride material between about 10:1 or greater.  
     
     
       11. The method of  claim 10 , wherein the oxide material is silicon oxide and the nitride material is silicon nitride. 
     
     
       12. The method of  claim 10 , wherein the one or more electronegative surfactants are surfactants selected from the group of potassium oleate, sulfosuccinates, sulfosuccinate derivatives, sulfates of ethoxylated alcohols, sulfated fatty esters, phosphate esters, alkylanyl sulfonates, sulfates of alcohols, carboxylated alcohols, lignin, lignin derivatives, and combinations thereof. 
     
     
       13. The method of  claim 12 , wherein the one or more electronegative surfactants comprise between about 0.02 vol % and about 10 vol % of the composition. 
     
     
       14. The method of  claim 10 , wherein the polishing composition further comprises a dispersant. 
     
     
       15. A method of processing a substrate, comprising: 
       contacting the substrate having at least one dielectric material and one conductive material disposed thereon with a polishing platen having polishing media disposed thereon;  
       providing an abrasive free polishing composition comprising one or more electronegative surfactants to the substrate; and  
       removing the dielectric material at a higher removal rate than the conductive material.  
     
     
       16. The method of  claim 15 , wherein the one or more electronegative surfactants are selected from the group of potassium oleate, sulfosuccinates, sulfosuccinate derivatives, sulfated fatty esters, phosphate esters, alkylanyl sulfonates, sulfates of alcohols, carboxylated alcohols, lignin, lignin derivatives, and combinations thereof. 
     
     
       17. The method of  claim 15 , wherein the one or more electronegative surfactants comprise between about 0.02 vol % and about 10 vol % of the composition. 
     
     
       18. The method of  claim 15 , wherein the dielectric material is silicon oxide, and the conductive material comprises polysilicon or doped polysilicon. 
     
     
       19. The method of  claim 15 , wherein the dielectric material is removed at a rate between about 100 Å/min and about 5000 Å/min. 
     
     
       20. The method of  claim 15 , wherein the conductive material is removed at a rate between about 0 Å/min and about 100 Å/min. 
     
     
       21. The method of  claim 15 , wherein the dielectric material and the conductive material are removed at a removal rate ratio of the dielectric material to the conductive material between about 10:1 and about 1500:1. 
     
     
       22. A method of processing a substrate having at least first and second materials disposed thereon, comprising: 
       contacting the substrate with a polishing platen having fixed abrasive polishing media disposed thereon;  
       providing an abrasive free polishing composition comprising one or more electronegative surfactants to the substrate; and  
       removing the first material at a higher removal rate than the second material.  
     
     
       23. The method of  claim 22 , wherein the one or more electronegative surfactants are selected from the group of potassium oleate, sulfosuccinates, sulfosuccinate derivatives, sulfated fatty esters, phosphate esters, alkylanyl sulfonates, sulfates of alcohols, carboxylated alcohols, lignin, lignin derivatives, and combinations thereof. 
     
     
       24. The method of  claim 23 , wherein the one or more electronegative surfactants comprise between about 0.02 vol % and about 10 vol % of the composition. 
     
     
       25. A method of processing a substrate having an oxide material and a second material disposed thereon, comprising: 
       providing the substrate to a polishing platen having polishing media disposed thereon;  
       providing a polishing composition comprising one or more electronegative surfactants, one or more pH adjusting agents, and deionized water to the substrate surface;  
       forming a removal resistant surface on the second material; and  
       removing the oxide material at a higher removal rate than the second material.  
     
     
       26. The method of  claim 25 , wherein the one or more electronegative surfactants are selected from the group of potassium oleate, sulfosuccinates, sulfosuccinate derivatives, sulfated fatty esters, phosphate esters, alkylanyl sulfonates, sulfates of alcohols, carboxylated alcohols, lignin, lignin derivatives, and combinations thereof. 
     
     
       27. The method of  claim 26 , wherein the one or more electronegative surfactants comprise between about 0.02 vol % and about 10 vol % of the composition. 
     
     
       28. A method of processing a substrate having at least an oxide material and a nitride material disposed thereon, comprising: 
       contacting the substrate with a polishing platen having polishing media disposed thereon;  
       providing an abrasive free polishing composition comprising one or more electronegative surfactants to the substrate; and  
       removing the oxide material at a higher removal rate than the nitride material.  
     
     
       29. The method of  claim 28 , wherein the one or more electronegative surfactants are selected from the group of potassium oleate, sulfosuccinates, sulfosuccinate derivatives, sulfated fatty esters, phosphate esters, alkylanyl sulfonates, sulfates of alcohols, carboxylated alcohols, lignin, lignin derivatives, and combinations thereof. 
     
     
       30. The method of  claim 29 , wherein the one or more ionic surfactants comprise between about 0.02 vol % and about 10 vol % of the composition. 
     
     
       31. A method of processing a substrate having at least an oxide material and a nitride material disposed thereon, comprising: 
       contacting the substrate with a polishing platen having polishing media disposed thereon;  
       providing to the substrate an abrasive free polishing composition comprising one or more surfactants having a higher affinity for the nitride material than the oxide material; and  
       removing the oxide material at a higher removal rate than the nitride material.  
     
     
       32. The method of  claim 31 , wherein the one or more surfactants are selected from the group of potassium oleate, sulfosuccinates, sulfosuccinate derivatives, sulfated fatty esters, phosphate esters, alkylanyl sulfonates, sulfates of alcohols, carboxylated alcohols, lignin, lignin derivatives, ammonium polyacrylate, polyethylene oxide, and combinations thereof. 
     
     
       33. The method of  claim 32 , wherein the one or more surfactants comprise between about 0.02 vol % and about 10 vol % of the composition.