US6703183B2ExpiredUtilityPatentIndex 93
Polymer, resist composition and patterning process
Est. expirySep 12, 2021(expired)· nominal 20-yr term from priority
G03F 7/0397C08F 220/1811C08F 220/1812G03F 7/032
93
PatentIndex Score
23
Cited by
5
References
4
Claims
Abstract
A polymer comprising recurring units of formulae (1) and (2) wherein R 1 and R 3 are H or methyl, R 2 and R 4 are C 1-15 alkyl, R 5 to R 8 are H, or R 5 and R 7 , and R 6 and R 8 form trimethylene or 1,3-cyclopentylene and having a Mw of 1,000-500,000 is novel. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution and etching resistance and lends itself to micropatterning with electron beams or deep-UV.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1. A polymer comprising recurring units of the general formula (1) and recurring units of the general formula (2) and having a weight average molecular weight of 1,000 to 500,000,
wherein R 1 and R 3 each are hydrogen or methyl, R 2 and R 4 each are a straight, branched or cyclic alkyl group of 1 to 15 carbon atoms, R 5 , R 6 , R 7 and R 8 each are hydrogen, or a pair of R 5 and R 7 and a pair of R 6 and R 8 each stand for a group of atoms to form trimethylene or 1,3-cyclopentylene.
2. The polymer of claim 1 further comprising recurring units of the general formula (3):
wherein R 9 is hydrogen or methyl, R 10 is hydrogen or a straight, branched or cyclic alkyl group of 1 to 15 carbon atoms, R 11 is hydrogen or CO 2 R 12 , R 12 is a straight, branched or cyclic alkyl group having 1 to 15 carbon atoms in which at least one oxygen atom may intervene in any carbon-to-carbon bond, and X is methylene or an oxygen atom.
3. A resist composition comprising the polymer of claim 1 as a base resin.
4. A process for forming a resist pattern comprising the steps of:
applying the resist composition of claim 3 onto a substrate to form a coating,
heat treating the coating and then exposing it to high-energy radiation or electron beam through a photo mask, and
optionally heat treating the exposed coating and developing it with a developer.Cited by (0)
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