Apparatus for integration of barrier layer and seed layer

Abstract

A system for processing a substrate is provided which includes at least one atomic layer deposition (ALD) chamber for depositing a barrier layer containing tantalum and at least one physical vapor deposition (PVD) metal seed chamber for depositing a metal seed layer on the barrier layer. The at least one ALD chamber may be in fluid communication with a first precursor source providing a tantalum-containing compound and a second precursor source. In one example, the tantalum-containing compound is an organometallic tantalum precursor, such as PDMAT. In another example, the second precursor source contains a nitrogen precursor, such as ammonia. The PDMAT may have a chlorine concentration of about 100 ppm or less, preferably, about 30 ppm or less, and more preferably, about 5 ppm or less. In some examples, the PVD metal seed chamber is used to deposit a copper-containing metal seed layer.

The invention claimed is: 
     
       1. A system for processing a substrate, comprising:
 at least one atomic layer deposition chamber for depositing a barrier layer comprising tantalum, wherein the at least one atomic layer deposition chamber is in fluid communication with a first precursor source providing a tantalum-containing compound and a second precursor source; and 
 at least one physical vapor deposition metal seed chamber for depositing a copper-containing seed layer on the barrier layer. 
 
     
     
       2. A system for processing a substrate, comprising:
 at least one atomic layer deposition chamber for depositing a barrier layer comprising tantalum, wherein the at least one atomic layer deposition chamber is in fluid communication with a first precursor source providing a tantalum-containing compound and a second precursor source; and 
 at least one physical vapor deposition metal seed chamber for depositing a metal seed layer on the barrier layer. 
 
     
     
       3. The system of  claim 2 , wherein the metal seed layer comprises a metal selected from the group consisting of copper, titanium, zirconium, tin, alloys thereof, and combinations thereof. 
     
     
       4. The system of  claim 3 , wherein the at least one physical vapor deposition metal seed chamber is a high density plasma physical vapor deposition metal seed chamber. 
     
     
       5. The system of  claim 4 , further comprising one or more transfer chambers for transferring a substrate between the at least one atomic layer deposition chamber and the at least one physical vapor deposition metal seed chamber. 
     
     
       6. The system of  claim 2 , wherein the tantalum-containing compound is an organometallic tantalum precursor. 
     
     
       7. The system of  claim 6 , wherein the organometallic tantalum precursor is PDMAT. 
     
     
       8. The system of  claim 7 , wherein the PDMAT has a chlorine concentration of about 100 ppm or less. 
     
     
       9. The system of  claim 8 , wherein the chlorine concentration is about 30 ppm or less. 
     
     
       10. The system of  claim 9 , wherein the chlorine concentration is about 5 ppm or less. 
     
     
       11. The system of  claim 2 , wherein the second precursor source comprises a nitrogen precursor. 
     
     
       12. The system of  claim 11 , wherein the nitrogen precursor is ammonia. 
     
     
       13. The system of  claim 2 , wherein the tantalum-containing compound is a tantalum halide precursor. 
     
     
       14. The system of  claim 13 , wherein the tantalum halide precursor comprises chlorine. 
     
     
       15. A system for processing a substrate, comprising:
 at least one atomic layer deposition chamber for depositing a barrier layer comprising tantalum, wherein the at least one atomic layer deposition chamber is in fluid communication with a first precursor source providing a tantalum-containing compound and a second precursor source; and 
 at least one deposition chamber is a physical vapor deposition chamber or an electroless deposition chamber for depositing a metal seed layer on the barrier layer. 
 
     
     
       16. The system of  claim 15 , wherein the metal seed layer comprises a metal selected from the group consisting of copper, titanium, zirconium, tin, alloys thereof, and combinations thereof. 
     
     
       17. The system of  claim 16 , wherein the at least one deposition chamber is a physical vapor deposition chamber. 
     
     
       18. The system of  claim 17 , wherein the physical vapor deposition chamber is a high density plasma physical vapor deposition metal seed chamber. 
     
     
       19. The system of  claim 18 , further comprising one or more transfer chambers for transferring a substrate between the at least one atomic layer deposition chamber and the physical vapor deposition chamber. 
     
     
       20. The system of  claim 15 , wherein the tantalum-containing compound is an organometallic tantalum precursor. 
     
     
       21. The system of  claim 20 , wherein the organometallic tantalum precursor is PDMAT. 
     
     
       22. The system of  claim 21 , wherein the PDMAT has a chlorine concentration of about 100 ppm or less. 
     
     
       23. The system of  claim 22 , wherein the chlorine concentration is about 30 ppm or less. 
     
     
       24. The system of  claim 23 , wherein the chlorine concentration is about 5 ppm or less. 
     
     
       25. The system of  claim 15 , wherein the second precursor source comprises a nitrogen precursor. 
     
     
       26. The system of  claim 25 , wherein the nitrogen precursor is ammonia. 
     
     
       27. The system of  claim 15 , wherein the tantalum-containing compound is a tantalum halide precursor. 
     
     
       28. The system of  claim 27 , wherein the tantalum halide precursor comprises chlorine.