Reducing oxidation under a high K gate dielectric

Abstract

A metal layer is formed on a dielectric layer, which is formed on a substrate. After forming a masking layer on the metal layer, the exposed sides of the dielectric layer are covered with a polymer diffusion barrier.

1 . A semiconductor structure comprising:
 a substrate;   a stack formed on said substrate, said stack including a polysilicon layer over a dielectric layer; and   a polymer diffusion barrier covering the sides of said dielectric layer.   
   
   
       2 . The structure of  claim 1  wherein said structure in the complementary metal oxide semiconductor structure including an NMOS transistor and a PMOS transistor, each of said transistors including a dielectric layer whose sides are covered by a polymer diffusion layer. 
   
   
       3 . The structure of  claim 1  wherein said dielectric layer has a dielectric constant greater than 10. 
   
   
       4 . The structure of  claim 1  wherein said polymer diffusion barrier is formed of fluorocarbon etch residue.