US2012286423A1PendingUtilityA1

Doping Minor Elements into Metal Bumps

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Assignee: CHENG MING-DAPriority: Jul 26, 2010Filed: Jul 23, 2012Published: Nov 15, 2012
Est. expiryJul 26, 2030(~4 yrs left)· nominal 20-yr term from priority
Inventors:Ming-Da ChengMing-Che HoChung-Shi LiuChien Ling HwangCheng-Chung LinHui-Jung TsaiZheng-Yi Lim
H10W 90/724H10W 90/722H10W 90/00H10W 72/07236H10W 72/01955H10W 72/01953H10W 72/01938H10W 72/01935H10W 72/01271H10W 72/01265H10W 72/01257H10W 72/01255H10W 72/01235H10W 72/01233H10W 72/01215H10W 72/952H10W 72/923H10W 72/255H10W 72/252H10W 72/245H10W 72/241H10W 72/225H10W 72/223H10W 72/221H10W 72/0198H10W 72/072H10W 72/29H10W 72/019H10W 72/012H10W 90/701H10W 70/65H10W 70/093
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Claims

Abstract

A method of forming a device includes providing a substrate, and forming a solder bump over the substrate. A minor element is introduced to a region adjacent a top surface of the solder bump. A re-flow process is then performed to the solder bump to drive the minor element into the solder bump.

Claims

exact text as granted — not AI-modified
1 . A device comprising:
 a substrate;   a metal bump over the substrate, wherein the metal bump comprises a surface layer and an inner layer under the surface layer; and   a minor element in the surface layer of the metal bump, wherein the inner layer of the metal bump is substantially free from the minor element therein, and wherein the minor element is selected from the group consisting essentially of cobalt, germanium, bismuth, zinc, indium, iron, manganese, cerium, antimony, and combinations thereof.   
     
     
         2 . The device of  claim 1  further comprising a package substrate bonded to the metal bump. 
     
     
         3 . The device of  claim 1 , wherein sidewall surface layers of the metal bump comprise the minor element. 
     
     
         4 . The device of  claim 1 , wherein sidewall surface layers of the metal bump are substantially free from the minor element. 
     
     
         5 . The device of  claim 1 , wherein the metal bump comprises solder, and wherein the minor element has an atomic percentage less than about 0.5 percent in the metal bump. 
     
     
         6 . The device of  claim 1 , wherein the minor element comprises iron. 
     
     
         7 . The device of  claim 1 , wherein the minor element comprises manganese. 
     
     
         8 . The device of  claim 1 , wherein the minor element comprises titanium. 
     
     
         9 . A device comprising:
 a substrate;   a solder bump over the substrate, wherein the solder bump comprises a substantially flat top surface and substantially vertical sidewalls; and   a minor element containing layer on the sidewalls and the top surface of the solder bump.   
     
     
         10 . The device of  claim 9 , wherein the minor element containing layer comprises a flux. 
     
     
         11 . The device of  claim 9 , wherein the minor element containing layer comprises a same solder as the solder bump, and wherein the solder bump is substantially free from the minor element. 
     
     
         12 . The device of  claim 11  further comprising a flux over the minor element containing layer, wherein the flux is substantially free from the minor element. 
     
     
         13 . The device of  claim 9 , wherein the minor element containing layer comprises a minor element selected from the group consisting essentially of germanium, bismuth, zinc, nickel, silver, cobalt, indium, iron, manganese, titanium, cerium, antimony, and combinations thereof. 
     
     
         14 . The device of  claim 13 , wherein the minor element comprises iron. 
     
     
         15 . The device of  claim 13 , wherein the minor element comprises manganese. 
     
     
         16 . The device of  claim 13 , wherein the minor element comprises titanium. 
     
     
         17 . A device comprising:
 a substrate;   a copper-containing bump over the substrate, wherein the copper-containing bump comprises a substantially flat top surface and substantially vertical sidewalls; and   a minor element containing layer on the sidewalls and the top surface of the copper-containing bump, wherein the minor element containing layer comprises a minor element selected from the group consisting essentially of germanium, bismuth, zinc, silver, cobalt, indium, iron, manganese, titanium, cerium, antimony, and combinations thereof.   
     
     
         18 . The device of  claim 17 , wherein the minor element containing layer comprises nickel. 
     
     
         19 . The device of  claim 17 , wherein the minor element containing layer comprises manganese. 
     
     
         20 . The device of  claim 17 , wherein the minor element containing layer comprises titanium.

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