Magnetic inductor structures for package devices

Abstract

Methods/structures of forming in-package inductor structures are described. Embodiments include a substrate including a dielectric material, the substrate having a first side and a second side. A conductive trace is located within the dielectric material. A first layer is on a first side of the conductive trace, wherein the first layer comprises an electroplated magnetic material, and wherein a sidewall of the first layer is adjacent the dielectric material. A second layer is on a second side of the conductive trace, wherein the second layer comprises the electroplated magnetic material, and wherein a sidewall of the second layer is adjacent the dielectric material.

What is claimed is: 
     
         1 . A microelectronic package structure, comprising:
 a substrate;   a via extending through the substrate, the via comprising an opening and a sidewall;   a magnetic material on the sidewall of the via and over a surface of the substrate, adjacent to the opening;   a first conductive layer directly on the magnetic material; and   a second conductive layer over the opening and over the magnetic material that is on the surface of the substrate adjacent the opening, wherein the magnetic material is not over the opening.   
     
     
         2 . The microelectronic package structure of  claim 1 , wherein the magnetic material comprises a thickness between about 10 microns to about 1000 microns. 
     
     
         3 . The microelectronic package structure of  claim 1 , wherein the second conductive layer is between the magnetic material that is on the surface of the substrate adjacent the opening and a build up layer. 
     
     
         4 . The microelectronic package structure of  claim 1  wherein the second conductive layer comprises copper. 
     
     
         5 . The microelectronic package structure of  claim 1 , wherein the substrate comprises an organic substrate. 
     
     
         6 . The microelectronic package structure of  claim 1 , wherein the magnetic material comprises a portion of an embedded inductor structure. 
     
     
         7 . The microelectronic package structure of  claim 1 , wherein the magnetic material comprises one or more of iron, nickel, cobalt or molybdenum, their alloys, and combinations thereof. 
     
     
         8 . The microelectronic package structure of  claim 1 , wherein the surface of the substrate includes a die electrically coupled thereto. 
     
     
         9 . The microelectronic package structure of  claim 8 , wherein the substrate comprises a portion of a printed circuit board (PCB), and the die comprises a memory die. 
     
     
         10 . A microelectronic package structure comprising:
 a core, wherein the core includes a first side and a second side;   a via extending through the core, the via comprising an opening and a sidewall;   a magnetic material on the sidewall and over the first side of the core, adjacent to the opening;   a first conductive layer directly on the magnetic material on the sidewall;   a second conductive layer over the opening and over the magnetic material that is on the first side of the core adjacent the opening, where the magnetic material is not over the opening; and   a buildup layer on at least one of the first side or the second side of the core.   
     
     
         11 . The microelectronic package structure of  claim 10 , wherein the magnetic material comprises an electroplated magnetic material, wherein the electroplated magnetic material comprises one or more of iron, nickel, cobalt, molybdenum, and combinations thereof. 
     
     
         12 . The microelectronic package structure of  claim 10 , wherein the buildup layer is directly on the second conductive layer. 
     
     
         13 . The microelectronic package structure of  claim 10  wherein at least a portion of one of the first side or the second side of the core comprises the magnetic material. 
     
     
         14 . The microelectronic package structure of  claim 10 , wherein the magnetic material comprises a thickness of between about 10 microns and about 30 microns. 
     
     
         15 . The microelectronic package structure of  claim 10 , wherein the via comprises a plated through hole. 
     
     
         16 . The microelectronic package structure of  claim 10 , wherein a seed layer is between the magnetic material and the sidewall of the via. 
     
     
         17 . The microelectronic package substrate of  claim 1 , further comprising:
 a microprocessor;   a memory coupled to the microprocessor; and   a battery coupled to the microprocessor, wherein at least the microprocessor is electrically coupled to the substrate.