Semiconductor Devices and Methods of Manufacture

Abstract

Photonic devices and methods of manufacture are provided. In embodiments a fill material and/or a secondary waveguide are utilized in order to protect other internal structures such as grating couplers from the rigors of subsequent processing steps. Through the use of these structures at the appropriate times during the manufacturing process, damage and debris that would otherwise interfere with the manufacturing process of the device or operation of the device can be avoided.

What is claimed is: 
     
         1 . A method of manufacturing an optical device, the method comprising:
 patterning a first material to form channels as part of a grating coupler;   depositing a dielectric material over the grating coupler;   forming an opening at least partially through the dielectric material over the grating coupler;   filling the opening with a fill material; and   forming a first redistribution layer over the fill material.   
     
     
         2 . The method of  claim 1 , further comprising forming a through via on a carrier substrate, wherein the forming the first redistribution layer forms the first redistribution layer over the through via. 
     
     
         3 . The method of  claim 2 , further comprising forming a second redistribution layer on an opposite side of the grating coupler from the first redistribution layer. 
     
     
         4 . The method of  claim 1 , wherein the forming the opening forms the opening to have a first width adjacent to the grating coupler of between about 20 μm and about 30 μm. 
     
     
         5 . The method of  claim 4 , wherein the forming the opening forms the opening to have a second width of between about 30 μm and about 40 μm. 
     
     
         6 . The method of  claim 1 , further comprising attaching a first electronic integrated circuit to the first redistribution layer. 
     
     
         7 . A method of manufacturing a semiconductor device, the method comprising:
 forming a photonic integrated circuit with a grating coupler adjacent to a first side, the grating coupler comprising a plurality of channels;   depositing one or more dielectric materials over the grating coupler;   replacing at least a portion of the one or more dielectric materials with a fill material;   encapsulating the photonic integrated circuit with a through via with an encapsulant, wherein the encapsulant comprises a single continuous material throughout the encapsulant; and   planarizing the encapsulant with the fill material.   
     
     
         8 . The method of  claim 7 , further comprising placing an optical fiber over the grating coupler. 
     
     
         9 . The method of  claim 7 , further comprising:
 forming a first redistribution layer on a first side of the through via; and   forming a second redistribution layer on a second side of the through via opposite the first side.   
     
     
         10 . The method of  claim 9 , further comprising bonding an electronic integrated circuit to the first redistribution layer. 
     
     
         11 . The method of  claim 7 , wherein the encapsulating the photonic integrated circuit further encapsulates an electronic integrated circuit. 
     
     
         12 . The method of  claim 7 , wherein the fill material comprises an epoxy. 
     
     
         13 . The method of  claim 7 , wherein the fill material comprises a siloxane. 
     
     
         14 . The method of  claim 7 , further comprising forming the through vias, the forming the through vias comprising:
 forming a seed layer on a substrate;   placing and patterning a photoresist over the seed layer;   plating a conductive material onto the seed layer through the photoresist;   removing the photoresist; and   removing a portion of the seed layer.   
     
     
         15 . A method of manufacturing an optical device, the method comprising:
 forming a first substrate, the first substrate comprising:
 an encapsulant, wherein the encapsulant comprises a single continuous material throughout the encapsulant; 
 a through via extending from a first side of the encapsulant to a second side of the encapsulant; 
 a photonic integrated circuit with a grating coupler; and 
 a fill material planar with each of the encapsulant, the through via, and an external connector of the photonic integrated circuit; 
   forming a first redistribution layer on a first side of the first substrate; and   forming a second redistribution layer on a second side of the first substrate opposite the first side.   
     
     
         16 . The method of  claim 15 , bonding a first electronic integrated circuit to the first redistribution layer. 
     
     
         17 . The method of  claim 15 , wherein the first substrate further comprises an electronic integrated circuit. 
     
     
         18 . The method of  claim 15 , wherein the fill material has a first width of between about 20 μm and about 30 μm. 
     
     
         19 . The method of  claim 18 , wherein the fill material has a second width of between about 30 μm and about 40 μm. 
     
     
         20 . The method of  claim 15 , wherein the fill material comprises siloxane.