Trim patterning for forming angled transistors

Abstract

An example IC device formed using trim patterning as described herein may include a support structure, a first elongated structure (e.g., a first fin or nanoribbon) and a second elongated structure (e.g., a second fin or nanoribbon), proximate to an end of the first elongated structure. An angle between a projection of the first elongated structure on the support structure and an edge of the support structure may be between about 5 and 45 degrees, while an angle between a projection of the second elongated structure on the support structure and the edge of the support structure may be less than about 15 degrees.

1 . An integrated circuit (IC) device, comprising:
 a substrate;   an elongated structure of a semiconductor material over the substrate;   a first structure of the semiconductor material, proximate to a first end of the elongated structure; and   a second structure of the semiconductor material, proximate to a second end of the elongated structure,   wherein:   a projection of the elongated structure on the substrate is along a first longitudinal axis,   a projection of the first structure on the substrate is a curve, and   a projection of the second structure on the substrate is along a second longitudinal axis at an angle between 10 and 80 degrees to the first longitudinal axis.   
     
     
         2 . The IC device according to  claim 1 , wherein the projection of the first structure on the substrate has a U-shape. 
     
     
         3 . The IC device according to  claim 1 , wherein:
 the projection of the elongated structure on the substrate has a first dimension in a first direction and a second dimension in a second direction,   the first direction is perpendicular to the second direction,   the first dimension greater than the second dimension, and   the curve has a portion extending along the first direction.   
     
     
         4 . The IC device according to  claim 3 , wherein a line along the first direction in the projection of the elongated structure on the substrate overlaps with a line along the first direction in the portion of the curve. 
     
     
         5 . The IC device according to  claim 3 , wherein the first direction is at an angle between 10 degrees and 80 degrees with respect to an edge of the substrate. 
     
     
         6 . The IC device according to  claim 3 , wherein a dimension of the portion of the curve extending along the first direction is less than 10% of the first dimension of the projection of the elongated structure on the substrate. 
     
     
         7 . The IC device according to  claim 1 , wherein a distance between the elongated structure and the first structure is between about 3 nanometers and 1000 nanometers. 
     
     
         8 . The IC device according to  claim 1 , wherein:
 the elongated structure is a first fin extending away from the substrate,   the first structure is a curved structure extending away from the substrate, and   the second structure is a second fin extending away from the substrate.   
     
     
         9 . The IC device according to  claim 8 , wherein a height of the first fin or a height of the second fin is substantially equal to a height of the curved structure. 
     
     
         10 . The IC device according to  claim 1 , wherein:
 the elongated structure is a first nanoribbon extending parallel to the substrate,   the first structure is a curved structure extending parallel to the substrate, and   the second structure is a second nanoribbon extending parallel to the substrate.   
     
     
         11 . The IC device according to  claim 10 , further comprising an insulator material between the first nanoribbon or the second nanoribbon and the substrate and between the curved structure and the substrate. 
     
     
         12 . The IC device according to  claim 1 , wherein a distance from the substrate to a surface of the elongated structure that is farthest away from the substrate is substantially equal to a distance from the substrate to a surface of the first structure that is farthest away from the substrate. 
     
     
         13 . The IC device according to  claim 1 , wherein the first structure is enclosed by an insulator material on all sides. 
     
     
         14 . The IC device according to  claim 1 , wherein the second structure is enclosed by an insulator material on all sides. 
     
     
         15 . An integrated circuit (IC) device, comprising:
 a die;   a first elongated structure of a semiconductor material over the die; and   a second elongated structure of the semiconductor material over the die, proximate to an end of the first elongated structure and at an angle between about 10 and 60 degrees with respect to the first elongated structure.   
     
     
         16 . The IC device according to  claim 15 , wherein an angle between a projection of the first elongated structure on the die and an edge of the die is between about 5 and 45 degrees. 
     
     
         17 . The IC device according to  claim 16 , wherein an angle between a projection of the second elongated structure on the die and the edge of the die is less than about 15 degrees. 
     
     
         18 . The IC device according to  claim 15 , wherein a distance between the first elongated structure and the second elongated structure is less than about 250 nanometers. 
     
     
         19 . An integrated circuit (IC) device, comprising:
 a support structure;   a first fin over the support structure; and   a second fin over the support structure,   wherein an angle between a projection of the first fin on the support structure and an edge of the support structure is between about 5 and 45 degrees and an angle between a projection of the second fin on the support structure and the edge of the support structure is less than about 15 degrees.   
     
     
         20 . The IC device according to  claim 19 , wherein the first fin and the second fin are electrically isolated from one another, the first fin includes one or more transistors, and the second fin does not include any transistors.