Method for cleaning semiconductor substrate, method for producing processed semiconductor substrate, and peeling composition

Abstract

A semiconductor substrate cleaning method includes removing an adhesive layer provided on a semiconductor substrate by use of a remover composition. The remover composition contains a solvent but no salt; the solvent includes one or more species selected from among an aliphatic hydrocarbon compound, an aromatic hydrocarbon compound, an ether compound, a thioether compound, an ester compound, and an amine compound, each having a molecular weight less than 160; and the remover composition exhibits a contact angle smaller than 31.5° with respect to the adhesive layer.

1 . A method for producing a remover composition, the method comprising:
 mixing a solvent comprising one or more species selected from among an aliphatic hydrocarbon compound, an aromatic hydrocarbon compound, an ether compound, a thioether compound, an ester compound, and an amine compound, each having a molecular weight less than 160; and   obtaining the remover composition for use in removal of an adhesive layer provided on a semiconductor substrate during cleaning the semiconductor substrate;   wherein:   the adhesive layer is a film formed by use of an adhesive composition which comprises an adhesive component (S) containing a siloxane adhesive which comprises a polyorganosiloxane component (A) being curable through hydrosilylation;   the composition contains no salt; and   the composition exhibits a contact angle smaller than 31.5° with respect to the adhesive layer.   
     
     
         2 . The method for producing a remover composition according to  claim 1 , wherein the solvent comprises one or more species selected from among di(n-butyl) ether, n-decane, di(n-pentyl) ether, 1-amino-n-pentane, p-menthane, butyl acetate, cyclohexane, di(n-propyl) sulfide, pentyl acetate, di(n-butyl) sulfide, mesitylene, limonene, and p-cymene. 
     
     
         3 . The method for producing a remover composition according to  claim 1 , wherein the adhesive component (S) further comprised at least one species selected from among an acrylic resin adhesive, an epoxy resin adhesive, a polyamide adhesive, a polystyrene adhesive, a polyimide adhesive, and a phenolic resin adhesive. 
     
     
         4 . A semiconductor substrate cleaning method comprising:
 removing an adhesive layer provided on a semiconductor substrate by use of a remover composition,   wherein:   the remover composition contains a solvent but no salt;   the solvent comprises one or more species selected from among an aliphatic hydrocarbon compound, an aromatic hydrocarbon compound, an ether compound, a thioether compound, an ester compound, and an amine compound, each having a molecular weight less than 160; and   the remover composition exhibits a contact angle smaller than 31.5° with respect to the adhesive layer.   
     
     
         5 . The semiconductor substrate cleaning method according to  claim 4 , wherein the molecular weight is 70 or more. 
     
     
         6 . The semiconductor substrate cleaning method according to  claim 4 , wherein the solvent comprises one or more species selected from among di(n-butyl) ether, n-decane, di(n-pentyl) ether, 1-amino-n-pentane, p-menthane, butyl acetate, cyclohexane, di(n-propyl) sulfide, pentyl acetate, di(n-butyl) sulfide, mesitylene, limonene, and p-cymene. 
     
     
         7 . The semiconductor substrate cleaning method according to  claim 4 , wherein the adhesive layer is a film formed by use of an adhesive composition which contains an adhesive component (S) containing at least one species selected from among a siloxane adhesive, an acrylic resin adhesive, an epoxy resin adhesive, a polyamide adhesive, a polystyrene adhesive, a polyimide adhesive, and a phenolic resin adhesive. 
     
     
         8 . The semiconductor substrate cleaning method according to  claim 7 , wherein the adhesive component (S) contains a siloxane adhesive. 
     
     
         9 . The semiconductor substrate cleaning method according to  claim 8 , wherein the siloxane adhesive contains a polyorganosiloxane component (A) which is curable through hydrosilylation. 
     
     
         10 . A processed semiconductor substrate production method comprising:
 producing a laminate having a semiconductor substrate, a support substrate, and an adhesive layer formed from an adhesive composition;   processing the semiconductor substrate of the produced laminate;   separating the semiconductor substrate and the adhesive layer from the support substrate; and   removing the adhesive layer on the semiconductor substrate by use of a remover composition,   wherein:   the remover composition contains a solvent but no salt;   the solvent comprises one or more species selected from among an aliphatic hydrocarbon compound, an aromatic hydrocarbon compound, an ether compound, a thioether compound, an ester compound, and an amine compound, each having a molecular weight less than 160; and   the remover composition exhibits a contact angle smaller than 31.5° with respect to the adhesive layer.   
     
     
         11 . The processed semiconductor substrate production method according to  claim 7 , wherein the molecular weight is 70 or more. 
     
     
         12 . The processed semiconductor substrate production method according to  claim 10 , wherein the solvent comprises one or more species selected from among di(n-butyl) ether, n-decane, di(n-pentyl) ether, 1-amino-n-pentane, p-menthane, butyl acetate, cyclohexane, di(n-propyl) sulfide, pentyl acetate, di(n-butyl) sulfide, mesitylene, limonene, and p-cymene. 
     
     
         13 . The processed semiconductor substrate production method according to  claim 10 , wherein the adhesive layer is a film formed by use of an adhesive composition which contains an adhesive component (S) containing at least one species selected from among a siloxane adhesive, an acrylic resin adhesive, an epoxy resin adhesive, a polyamide adhesive, a polystyrene adhesive, a polyimide adhesive, and a phenolic resin adhesive. 
     
     
         14 . The processed semiconductor substrate production method according to  claim 13 , wherein the adhesive component (S) contains a siloxane adhesive. 
     
     
         15 . The processed semiconductor substrate production method according to  claim 14 , wherein the siloxane adhesive contains a polyorganosiloxane component (A) which is curable through hydrosilylation.