Semiconductor package having a lead frame and a clip frame

Abstract

A molded semiconductor package includes a lead frame having one or more first leads monolithically formed with a die pad and extending outward from the pad in a first direction. A semiconductor die is attached to the die pad at a first side of the die. A metal clip of a clip frame is attached to a power terminal at a second side of the die. One or more second leads monolithically formed with the metal clip extend outward from the clip in a second direction different than the first direction. A mold compound embeds the die. The first lead(s) and the second lead(s) are exposed at different sides of the mold compound and do not vertically overlap with one another. Within the mold compound, the clip transitions from a first level above the power terminal to a second level in a same plane as the leads.

What is claimed is: 
     
         1 . A molded semiconductor package, comprising:
 a lead frame comprising a die pad and one or more first leads monolithically formed with the die pad and extending outward from the die pad in a first direction;   a semiconductor die attached to the die pad at a first side of the semiconductor die;   a clip frame comprising a first metal clip attached to a power terminal at a second side of the semiconductor die opposite the first side, and one or more second leads monolithically formed with the first metal clip and extending outward from the first metal clip in a second direction different than the first direction; and   a mold compound embedding the semiconductor die,   wherein the one or more first leads and the one or more second leads are exposed at different sides of the mold compound and do not vertically overlap with one another,   wherein within the mold compound, the first metal clip transitions from a first level above the power terminal at the second side of the semiconductor die to a second level in a same plane as the one or more first leads and the one or more second leads.   
     
     
         2 . The molded semiconductor package of  claim 1 , wherein the clip frame further comprises a second metal clip attached to a control terminal at the second side of the semiconductor die and a third lead extending outward from the second metal clip, and wherein the third lead is exposed at a side of the mold compound and does not vertically overlap with the one or more first leads. 
     
     
         3 . The molded semiconductor package of  claim 2 , wherein the third lead is monolithically formed with the second metal clip. 
     
     
         4 . The molded semiconductor package of  claim 1 , wherein the one or more first leads protrudes from a first side face of the mold compound, and wherein the one or more second leads protrudes from a second side face of the mold compound different than the first side face. 
     
     
         5 . The molded semiconductor package of  claim 4 , wherein the part of the one or more first leads which protrudes from the first side face of the mold compound and the part of the one or more second leads which protrudes from the second side face of the mold compound are at least partially plated to form wettable lead surfaces at different side faces of the mold compound. 
     
     
         6 . The molded semiconductor package of  claim 1 , wherein the first metal clip is bent in at least two different places within the mold compound. 
     
     
         7 . The molded semiconductor package of  claim 1 , wherein the semiconductor die is a power transistor die, wherein a power terminal at the first side of the power semiconductor die is a drain or collector terminal, wherein the power terminal at the second side of the power semiconductor die is a source or emitter terminal, and wherein the power semiconductor die is attached to the die pad in a drain-down or collector-down configuration. 
     
     
         8 . The molded semiconductor package of  claim 1 , wherein the semiconductor die is a power transistor die, wherein a power terminal at the first side of the power semiconductor die is a source or emitter terminal, wherein the power terminal at the second side of the power semiconductor die is a drain terminal, and wherein the power semiconductor die is attached to the die pad in a source-down or emitter-down configuration. 
     
     
         9 . The molded semiconductor package of  claim 8 , wherein the lead frame comprises an additional lead attached to a control terminal at the first side of the power semiconductor die, and wherein the additional lead is exposed at the same side of the mold compound as the one or more first leads. 
     
     
         10 . The molded semiconductor package of  claim 1 , wherein the die pad and the first metal clip are bent in a same direction, and wherein the first metal clip is bent to a lesser extent that the die pad so that the one or more first leads monolithically formed with the die pad and the one or more second leads monolithically formed with the first metal clip terminate in a same plane and are configured for surface mounting at a first side of the molded semiconductor package. 
     
     
         11 . The molded semiconductor package of  claim 1 , wherein the die pad is at least partly uncovered by the mold compound at a second side of the molded semiconductor package opposite the first side of the molded semiconductor package to provide a heat dissipation path at the opposite side of the molded semiconductor package configured for surface mounting. 
     
     
         12 . The molded semiconductor package of  claim 1 , wherein part of each first lead of the lead frame and part of each second lead of the clip frame are not covered by the mold compound. 
     
     
         13 . The molded semiconductor package of  claim 12 , wherein the part of each first lead of the lead frame not covered by the mold compound and the part of each second lead of the clip frame not covered by the mold compound are flush with the mold compound. 
     
     
         14 . The molded semiconductor package of  claim 12 , wherein the part of each first lead of the lead frame not covered by the mold compound and the part of each second lead of the clip frame not covered by the mold compound are recessed from the mold compound. 
     
     
         15 . The molded semiconductor package of  claim 12 , wherein the part of each first lead of the lead frame not covered by the mold compound and the part of each second lead of the clip frame not covered by the mold compound protrude from the mold compound. 
     
     
         16 . The molded semiconductor package of  claim 1 , wherein the one or more first leads of the lead frame protrude outward from a different but not opposite side face of the mold compound as the one or more second leads of the clip frame. 
     
     
         17 . The molded semiconductor package of  claim 1 , wherein the first metal clip comprises a wave-like feature that extends upward in a wave-like manner at an edge of the semiconductor die. 
     
     
         18 . The molded semiconductor package of  claim 1 , wherein the first metal clip comprises slots. 
     
     
         19 . The molded semiconductor package of  claim 1 , wherein the first metal clip comprises a coined bottom side. 
     
     
         20 . The molded semiconductor package of  claim 1 , wherein the first metal clip comprises dimples and/or crosses.